Process for manufacturing photosensitive flat-panel with Se allotropic P.N or N.P structure

Abstract

This invention discloses manufacture technique with allotropic P.N or N.P structure for direct imaging sensitization massive plate, which processes the mixing membrane layer of amorphous selenium and crystal selenium, and crystal selenium membrane layer on conducting plate. The invention is new to overcome drawbacks in existing technique, has high stable potential, well imaging quality and repeatability, and benefits to the digitization development of future medical image.

Description

technical field [0001] The invention discloses a manufacturing process of a photosensitive large flat plate in a new medical image digitization technology. Background technique [0002] Currently in the field of medical imaging digital technology, the best is the direct imaging (DR) technology. The most important component in DR technology is a large-scale thin film transistor matrix (TFT) or chip (CMOS) flat panel detector. Its key technology is the manufacture of high-quality amorphous selenium (a-se) film in photosensitive large flat panel. However, the manufacture of (a-se) membrane is very difficult, the success rate is low, its repeatability and stability are poor, the charging performance is also unstable, and the potential is not ideal. In addition, because there is no convection in a vacuum environment, there is a gap between the temperature control substrate and the conductive plate, and the radiation conduction effect is poor, so the conduction is blocked and th...

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Problems solved by technology

However, the (a-se) film is very difficult to manufacture, the success rate is low, its repeatability and stability are poor, the charging performance is also unstable, and the potential is not ideal

In addition, because there is no convection in a vacuum environment, there is a gap between the temperature control substrate and the conductive plate, and the radiation conduction effect is poor, so the conduction is blocked and the temperature of the conductive plate is out of control. This is the key reason why it is difficult to obtain an ideal (a-se) film layer

Therefore, the current price of a TFT flat panel detector is about 80,000 to 100,000 dollars. As a consumable, such a price is unacceptable, which greatly limits the popularization, development and improvement of DR technology.

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