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Gas layer formation materials

A gas layer, polymer layer technology, applied in electrical components, electrical solid devices, semiconductor devices, etc., can solve problems such as inability to meet industrial requirements and undesired integration solutions

Inactive Publication Date: 2006-02-15
HONEYWELL INT INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, polyethylene glycol, polypropylene glycol and polybutadiene do not meet this industrial requirement
Additionally, Hollie A. Reed et al. teach polyimide capping layers, but are undesirable in integrated schemes due to their nitrogen content

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0134] The preparation of the copolymer of embodiment 1-acenaphthene and vinyl pivalate of the present invention:

[0135] A thermally degradable polymer comprising a copolymer of acenaphthene and vinyl pivalate was prepared as follows. To a 250 mL flask equipped with a magnetic stirrer was added 20 g of technical grade acenaphthene, 3.1579 g (0.0246 mol) of vinyl pivalate, 0.5673 g (2.464 mmol) of di-tert-butyl azodicarboxylate and 95 mL xylene. The mixture was stirred at room temperature for ten minutes until a homogeneous solution was obtained. The reaction solution was then degassed for five minutes under reduced pressure and purged with nitrogen. Repeat the process three times. The reaction mixture was then heated to 140°C under nitrogen for six hours. The solution was cooled to room temperature and added dropwise to 237 mL of ethanol. The mixture was stirred at room temperature for another 20 minutes. The precipitate formed was collected by filtration and dried und...

Embodiment 3

[0139] The preparation of the copolymer of embodiment 3-acenaphthene and vinyl acetate of the present invention:

[0140] A thermally degradable polymer comprising a copolymer of acenaphthene and vinyl acetate was prepared as follows. To a 250 mL flask equipped with a magnetic stirrer was added 20 g of technical grade acenaphthene, 1.6969 g (0.01971 mol) of vinyl acetate, 0.3884 g (2.365 mmol) of 2,2'-azobisisobutyronitrile and 88 mL of di toluene. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed under reduced pressure for 5 minutes and purged with nitrogen. Repeat the process three times. The reaction mixture was then heated to 70°C under nitrogen for 24 hours. The solution was cooled to room temperature and added dropwise to 220 mL of ethanol. The mixture was stirred at room temperature for another 20 minutes. The precipitate formed was collected by filtration and dried under v...

Embodiment 4

[0141] The preparation of embodiment 4-polyacenaphthene homopolymer of the present invention:

[0142] Polymers of acenaphthylene were prepared as follows. To a 250 mL flask equipped with a magnetic stirrer was added 30 g of technical grade acenaphthene, 0.3404 g of di-tert-butyl azodicarboxylate (1.478 mmol) and 121 mL of xylene. The mixture was stirred at room temperature for 10 minutes until a homogeneous solution was obtained. The reaction solution was then degassed for five minutes under reduced pressure and purged with nitrogen.

[0143] Repeat the process three times. The reaction mixture was then heated to 140°C under nitrogen for six hours. The solution was cooled to room temperature and added dropwise to 303 mL of ethanol. The mixture was stirred at room temperature for another 20 minutes.

[0144] The precipitate formed was collected by filtration and dried under vacuum. The properties of the resulting homopolymers are listed as homopolymers in Table 6 below, ...

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Abstract

The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate / methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

Description

technical field [0001] The present invention relates to semiconductor devices, and in particular to semiconductor devices having a gas layer therein. Background technique [0002] To increase the performance and speed of semiconductor devices, semiconductor device manufacturers have sought to reduce the line width and spacing of interconnects while minimizing transmission losses and reducing capacitive coupling of interconnects. One way to reduce power consumption and lower capacitance is to lower the dielectric constant (also referred to as "k") of the insulating material, or dielectric, that separates the interconnects. Insulator materials with low dielectric constants are particularly desirable because they generally allow faster signal propagation, reduce capacitance and crosstalk between wires, and reduce the voltage required to drive integrated circuits. [0003] Since air has a dielectric constant of 1.0, an important goal is to reduce the dielectric constant of insu...

Claims

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Application Information

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IPC IPC(8): H01B3/30H01L21/47H01L21/4763C08G61/02C08L65/00H01L21/312H01L21/316H01L21/768H01L23/522H01L23/532
CPCH01L23/5222C08L65/00H01L21/76808H01L21/76801H01L21/76829H01L21/3121H01L2924/09701C08G61/02H01L2221/1036H01L21/31695H01L21/7682H01L21/312H01L23/5329H01L2924/12044H01L2924/0002H01L21/02318H01L21/02282H01L21/02271H01L21/02203H01L21/02126H01L21/02118H01L2924/00H01B3/36H01B3/18
Inventor B·李D·-L·周A·纳曼P·阿彭
Owner HONEYWELL INT INC