Three-dimensional multi-gate high-voltage N type transverse double-diffused metal-oxide semiconductor device

A lateral double diffusion, semiconductor tube technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of not maximizing the use of chip area, small on-resistance, large saturation current, etc., to achieve improved performance , The effect of good breakdown characteristics and good temperature characteristics

Inactive Publication Date: 2006-04-26
SOUTHEAST UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

It is precisely due to the continuous improvement of application requirements that new structures of high-current metal-oxide-semiconductor high-voltage devices continue to emerge, but these structures have not yet maximized the use of chip area, and have not yet reached the minimum under the same breakdown voltage. on-resistance and maximum saturation current

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  • Three-dimensional multi-gate high-voltage N type transverse double-diffused metal-oxide semiconductor device
  • Three-dimensional multi-gate high-voltage N type transverse double-diffused metal-oxide semiconductor device
  • Three-dimensional multi-gate high-voltage N type transverse double-diffused metal-oxide semiconductor device

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Embodiment 1

[0019] A three-dimensional multi-gate high-voltage N-type lateral double-diffused metal oxide semiconductor transistor used as a high-voltage device, comprising: a P-type substrate 1, an oxide layer 2 is arranged on the P-type substrate 1, and an oxide layer is arranged on the oxide layer 2. A columnar N-type drift region 3, on the oxide layer 2 and located adjacent to both ends of the N-type drift region 3, an N-type drain 4 and an N channel 5 are respectively arranged, on the oxide layer 2 and located adjacent to the N channel 5 An N-type source 6 is provided at the position, a field oxide layer 7 is coated on the surface of the N-type drift region 3, a gate oxide layer 8 is coated on the surface of the N channel 5, and the surfaces of the field oxide layer 7 and the gate oxide layer 8 are Coated with a polysilicon layer 9, in this embodiment, a cavity 21 is provided on the oxide layer 2 and below the N-type drift region 3 and the N channel 5, and a field oxide bottom layer 7...

Embodiment 2

[0021] A preparation process for manufacturing the three-dimensional multi-gate high-voltage N-type lateral double-diffused metal oxide semiconductor tube described in claim 1, characterized in that a P-type substrate is prepared first, and then an oxide layer is prepared on the P-type substrate. P-type silicon is grown on the oxide layer, N-type doping is performed on a part of the P-type silicon to form an N-type drift region, and a field oxide layer is formed on the two sides and the upper surface of the N-type drift region by wet thermal oxidation. P-type doping is carried out on the P-type silicon to form an N-type channel, and dry thermal oxidation is grown on both sides and the upper surface of the N-type channel to form a gate oxide layer. Deposit polysilicon and form a polysilicon layer on the surface and part of the both side surfaces and the upper surface of the N-type drift region. Finally, perform source and drain N-type impurity implantation, engrave holes and pre...

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Abstract

The invention discloses a three-dimension multigrid N-type lateral dual-diffusion MOS transistor used as high-voltage device, which comprises: a P-type substrate with oxidation layer, a column N-type drift region on oxidation layer; a N-type drain and channel on oxidation layer and two ends of N-type drift region, a N-type source on oxidation layer and near N-type channel; a field oxide to cover the surface of N-type drift region, a grid-oxidation layer on N-type channel surface, a polysilicon layer to cover the field oxidation layer and grid-oxidation layer surface. This invention has compact structure, makes conduction resistance less than one third of traditional tube, and increases current density more than two times.

Description

technical field [0001] The invention relates to an N-type lateral double-diffused metal oxide semiconductor tube, in particular to a three-dimensional multi-gate high-voltage N-type lateral double-diffused metal oxide semiconductor tube which can be used for integrated circuits. Background technique [0002] The lateral double-diffused metal oxide semiconductor high-voltage device has the advantages of good switching characteristics and low power consumption. More importantly, the lateral double-diffused metal oxide semiconductor high-voltage device is easily compatible with the standard low-voltage metal oxide semiconductor process, reducing the production cost of the chip Therefore, metal oxide semiconductor high-voltage integrated devices have absolute advantages in the application range of 10V-600V. The lateral double-diffused metal-oxide-semiconductor high-voltage device made of SOI material (silicon-on-insulator structure) has better breakdown characteristics, better t...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L21/336
Inventor 孙伟锋时龙兴易扬波陆生礼桑爱兵
Owner SOUTHEAST UNIV
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