Polishing liquid for CMP process and polishing method

A grinding method and technology of grinding liquid, which are applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of easy residue, deviation of grinding characteristics, and damage to the qualified product rate of device wafers.

Inactive Publication Date: 2006-06-07
SANYO CHEM IND LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, in this method, high grinding pressure is not used for grinding, so many defects remain on the wafer after grinding, which will significantly damage the yield of device wafers
[0005] Similarly, the problem is that when the high-molecular anionic surfactant is mixed with the grinding fluid, it is easy to cause the agglomeration of the abrasive material, resulting in deviatio

Method used

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Examples

Experimental program
Comparison scheme
Effect test

manufacture example 1

[0129] 1,000 g of a 0.1% sodium silicate aqueous solution was passed through a 1,000 g cation exchange resin (DIAION SKIB; manufactured by MITSUBISHI CHEMICAL CORPORATION) column, followed by stirring at a temperature of 50°C for 3 hours to obtain a silica sol, which was cooled to room temperature, and then passed through Vacuum dehydration and concentration at 35°C gave a slurry (1) with a silica concentration of 30%.

manufacture example 2

[0131] 360 ml of toluene, 10.8 g of sorbitan monooleate, 120 ml of ion-exchanged water, and 1 ml of acetic acid were charged into a glass reaction vessel with a 1 L stirrer, and vigorously stirred at a temperature of 50° C. for 10 minutes to achieve emulsification. 140 ml of tetraethoxysilane was put into a container at one time, and it was made to react at 50 degreeC temperature for 3 hours, and the silica sol was obtained. After cooling the silica sol to room temperature, it was filtered with filter paper (No. 2). The silica sol on the filter paper was washed with 1 L of methanol and ion-exchanged water in this order, and then dispersed into the ion-exchanged water. In water, a slurry (2) having a silica concentration of 30% was obtained.

manufacture example 3

[0133] Similar to Production Example 1, 1,000 g of a 0.1% sodium silicate aqueous solution was passed through a 1,000 g column of a cation exchange resin (DIAION SKIB; manufactured by MITSUBISHI CHEMICAL CORPORATION), followed by stirring at a temperature of 65°C for 5 hours to obtain a silica sol, which was It was cooled to room temperature, followed by dehydration and concentration in the same manner as in Production Example 1 to obtain a slurry (3) having a silica concentration of 30%.

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Abstract

The invention discloses a grinding liquid for a CMP method, which is characterized in that it contains grinding materials, aqueous solvents and additives, and contains at least 15% by weight of grinding material particles with a particle diameter of 20-80nm based on the weight of the grinding liquid; The grinding method of grinding is suitable for the flattening process of the surface of the device wafer on which at least the silicon oxide film is formed, and can effectively and stably exhibit superior grinding characteristics such as flattening characteristics, low defect characteristics and high cleaning characteristics, the most suitable It is the planarization process of the surface of semiconductor devices including interlayer insulating film or element separation film, magnetic head and substrate for liquid crystal display in the semiconductor industry.

Description

technical field [0001] The present invention relates to a polishing liquid for a CMP method, more particularly, to a polishing liquid for a CMP method in the manufacture of semiconductor devices, in particular, to a step for planarizing an interlayer insulating film, for forming a shallow trench in a trench for element separation, The polishing liquid for CMP method used in the step of burying the capacitor and the metal wiring, and the step of forming the magnetic head. Background technique [0002] In the CMP method, in order to improve the flatness after polishing, a technique of using a high molecular anionic surfactant for polishing liquid is conventionally known (Japanese Unexamined Patent Publication No. 2001-57353). For this technique, the active agent interacts with the device wafer and / or abrasive material prior to grinding, and the grinding is performed by this interaction above a certain grinding pressure. The grinding pressure is relatively difficult to apply t...

Claims

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Application Information

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IPC IPC(8): H01L21/304
Inventor 中野智治中岛史博宫崎忠一邓肯·布朗马修·D·希利
Owner SANYO CHEM IND LTD
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