Process for sintering Sialong binding silicon carbide refractory by microwave tech.

A refractory material and silicon carbide technology, applied in the field of refractory materials, can solve the problems of inconsistent product quality inside and outside, long sintering cycle, increased production cost, etc., achieve excellent alkali corrosion resistance, improve market competitiveness, and good thermal shock resistance Effect

Inactive Publication Date: 2006-06-28
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the sintering temperature of the traditional industrial production method is generally below 1450°C. Due to the high reaction and sintering temperature of Sialon combined with silicon carbide, it is difficult to achieve the Sialon material with complete nitriding reaction by the above traditional sintering method, so it is difficult Obtained Sialon Bonded Silicon Carbide with Excellent Properties
The higher reaction temperature puts high demands on the nitriding sintering equipment, which also greatly increases the production cost
[0004] In addition, the above-mentioned traditional reaction sintering method has the disadvantages of long sintering cycle (a cycle of general laboratory or industrial production often takes a week or more), high e...

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A production process for sintering Sialon bonded silicon carbide refractories (hereinafter referred to as Sialon bonded silicon carbide refractories) using microwave technology for rapid nitriding reaction:

[0029] raw material:

[0030] The quality requirements of silicon carbide raw materials are, SiC is greater than 95%, Fe 2 o 3 Less than 0.5%.

[0031] The proportion of each silicon carbide particle size is: 6.0mm~3mm, accounting for 20%; 3~1mm, accounting for 20%; 1~0.5mm, accounting for 8%; ≤0.5mm, accounting for 8%. powder 4%; the total addition of silicon carbide is 60% (percentage by weight).

[0032] The quality requirements of silicon powder raw materials are: Si greater than 95%, Fe 2 o 3 Less than 0.5%. Particle size The particle size is less than 70 μm, and the addition amount is 20%.

[0033] The quality requirement of alumina powder is, Al 2 o 3 Greater than 95%, Fe 2 o 3 Less than 0.5%, the particle size distribution is 0.1μm~10μm, and the ...

Embodiment 2

[0047] A production process for sintering Sialon bonded silicon carbide refractories (hereinafter referred to as Sialon bonded silicon carbide refractories) using microwave technology for rapid nitriding reaction:

[0048] raw material:

[0049] The quality requirements of silicon carbide raw materials are, SiC is greater than 98%, Fe 2 o 3 Less than 0.5%.

[0050] The proportion of each silicon carbide particle size is: 6.0mm~3mm, accounting for 22%; 3~1mm, accounting for 17%; 1~0.5mm, accounting for 11%; ≤0.5mm, accounting for 8%. Powder 7%; The total addition of silicon carbide is 65% (percentage by weight).

[0051] The quality requirement of silicon powder raw material is that Si is greater than 98%, Fe 2 o 3 Less than 0.5%. The particle size is less than 50 μm, and the addition amount is 16%.

[0052] The quality requirement of alumina powder is, Al 2 o 3 Greater than 99%, Fe 2 o 3 Less than 0.2%, the particle size distribution is 0.1μm-2μm, and the addition a...

Embodiment 3

[0066] A production process for sintering Sialon bonded silicon carbide refractories (hereinafter referred to as Sialon bonded silicon carbide refractories) using microwave technology for rapid nitriding reaction:

[0067] raw material:

[0068] The quality requirements of silicon carbide raw materials are, SiC is greater than 97%, Fe 2 o 3 Less than 0.5%.

[0069] The proportion of each silicon carbide particle size is: 6.0mm~3mm, accounting for 18%; 3~1mm, accounting for 30%; 1~0.5mm, accounting for 10%; ≤0.5mm, accounting for 8%. Powder 24%; The total addition of silicon carbide is 90% (percentage by weight).

[0070] The quality requirement of silicon powder raw material is that Si is greater than 98%, Fe 2 o 3 Less than 0.5%. The particle size is less than 70μm, and the addition amount is 7.5%.

[0071] The quality requirement of alumina powder is, Al 2 o 3 Greater than 99%, Fe 2 o 3 Less than 0.1%, the particle size distribution is 0.1μm~2μm, and the addition ...

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Abstract

The invention relates to a technology that uses microwave quickly reacting nitriding sintering Sialon associated with silicon carbide refractory. The feature of the invention is that its bulk density is 2.68-3.2g/cm3, compressive strength is over 180MPa, bending strength is over 45MPa, degree of porosity is below 15%, good thermal shock resistance, good anti-oxygenic property and excellent alkali resistance. It also solves the technology problem of super thickness (100mm-200mm) Sialon nitriding reacting sintering with silicon carbide refractory material.

Description

technical field [0001] The invention relates to a method for fast-response nitriding sintering Sialon combined with silicon carbide refractory material by using microwave technology, which belongs to the technical field of refractory material. Background technique [0002] Sialon combined with silicon carbide refractory material is a kind of lining refractory material widely used in iron and steel smelting, thermal power generation and casting and other high-temperature equipment, kiln furniture in high-temperature kilns such as ceramics, grinding wheels, and electric porcelain, and various types of waste incineration. New advanced non-oxide refractories in high temperature equipment such as furnaces. Compared with traditional oxide refractory materials, it has the characteristics of high technical content, high service temperature, and strong wear resistance. Compared with silicon nitride and silicon carbide, it has particularly good oxidation resistance and alkali corrosio...

Claims

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Application Information

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IPC IPC(8): C04B35/565C04B35/599C04B35/64C04B35/66C04B35/622
Inventor 潘伟彭虎黄朝晖张晓东齐龙浩
Owner TSINGHUA UNIV
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