Non-aluminium 1.3 micron indium arsenic/gallium arsenic quantum point laser

Abstract

This invention relates to a 1.3mum InAs / GaAs quantum dot laser without Al including a chip, a buffer layer processed on the chip, a lower cladding made on the buffer layer, a lower waveguide layer set on the lower cladding, a quantum dot active region set on the lower waveguide layer, an upper waveguide layer prepared on the active region of the quantum dot, an upper cladding prepared on the upper waveguide layer under low temperature, a contact layer prepared on the upper cladding. Since high quality of the InGaP can be got under low growing temperature, the blue shift of the quantum dots is controlled effectively in the growing process of the cladding.

Description

technical field

[0001] The invention relates to an indium arsenide (InAs) / gallium arsenide (GaAs) quantum dot (QDs) laser grown by metal organic compound vapor phase epitaxy (MOCVD), in particular to an aluminum-free 1.3 μm indium arsenic / gallium arsenic quantum dot laser. Background technique

[0002] It is theoretically predicted that lasers with QDs as the active region have superior properties such as high quantum efficiency, low threshold current and high characteristic temperature. Recently, InAs / GaAs QDs grown on GaAs substrates have attracted extensive attention because they can extend the laser emission wavelength to 1.3 μm or 1.5 μm. There have been many studies on InAS QDs 1.3 μm lasers grown by molecular beam epitaxy (MBE) technology and realized room temperature work (see Electron.Lett., Vol.40, No.22, 2004, pp 1412-1413 and IEEE Photonics Technol . Lett., Vol.12, No.6, 2000, pp 591-592). Although compared with MBE technology, MOCVD technology has the advanta...

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