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Polymer for forming anti-reflective coating layer

An anti-reflection coating and polymer technology, which can be used in photosensitive materials used in optomechanical equipment, building structures, and photoplate-making processes on patterned surfaces, and can solve problems such as unsatisfactory light absorption.

Inactive Publication Date: 2006-09-06
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, conventional compositions used to form the organic antireflection coatings have been unsatisfactory in terms of properties such as irradiated light absorption and the like so far.

Method used

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  • Polymer for forming anti-reflective coating layer
  • Polymer for forming anti-reflective coating layer
  • Polymer for forming anti-reflective coating layer

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0055] [Preparation Example 1] Preparation of anthracene acrylate oxide

[0056] As shown in Reaction 1 below, 30 g of 9-anthracene acrylate and 1 L of chloroform were added to a 2 L reactor, and stirred and cooled in ice water. 47 g of 3-chloroperoxybenzoic acid (mCPBA) was slowly added to the cooled solution, and reacted at room temperature for 24 hours. After completion of the reaction, 3-chlorobenzoic acid (by-product) was removed by filtering the resulting product, followed by washing twice with a saturated aqueous solution of sodium sulfite, once with a saturated aqueous solution of sodium bicarbonate, and once with a saturated aqueous solution of sodium chloride. times and washed once with distilled water to remove residual 3-chlorobenzoic acid. Then, the product was dried with magnesium sulfate, and chloroform was removed under reduced pressure, and then the product was vacuum-dried for 1 day to obtain 25.5 g of pure anthracene acrylate oxide. exist figure 1 The NMR...

preparation Embodiment 22

[0059] [Preparation Example 2] Preparation of 2-hydroxyethyl-oxycarbonyl oxirane

[0060] As shown in Reaction Formula 2 below, except that 30 g of 9-anthracene acrylate was replaced with 30 g of 2-hydroxyethyl-acrylate (HEA), the reaction described in Preparation Example 1 was carried out to obtain 25 g of 2-hydroxyethyl-acrylate Base-oxycarbonyloxirane.

[0061] [Reaction 2]

[0062]

preparation Embodiment 3

[0063] [Preparation Example 3] Preparation of glycidyl-oxycarbonyl oxirane

[0064] As shown in Reaction Formula 3 below, except that 30 g of 9-anthracene acrylate was replaced with 30 g of glycidyl acrylate, the reaction described in Preparation Example 1 was carried out to obtain 22 g of glycidyl-oxycarbonyl oxirane .

[0065] [reaction formula 3]

[0066]

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Abstract

The present invention discloses polymers and compositions comprising the polymers for forming organic antireflective coatings that are positioned between an etch layer and a photoresist layer and that absorb radiation during photolithography Light. The polymer used to form the organic anti-reflection coating has repeating units shown in formula 1 and formula 2, wherein R1 is a substituted or unsubstituted C1-C5 alkyl group.

Description

field of invention [0001] The present invention relates to polymers for forming anti-reflective coatings, and more particularly to polymers for forming organic anti-reflective coatings and compositions comprising the polymers, the organic anti-reflective coatings being located Between the etch layer and the photoresist layer, and absorb the irradiating light during the photolithography process. Background of the invention [0002] In general, photolithography involves the steps of applying a photoresist composition to substrates such as wafers, glass, ceramics, and metals by spin coating or roll coating, heating and drying the applied photoresist A photoresist layer is formed from a photoresist composition, a photoresist pattern is formed by exposing the photoresist layer to irradiation light in a predetermined pattern, optionally heated, and the exposed photoresist layer is developed to form the photoresist layer formed. The glue pattern is used as a mask, and the semicond...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/09G03F7/20
CPCG03F7/091E05B3/04
Inventor 金相廷金德倍金宰贤
Owner DONGJIN SEMICHEM CO LTD
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