Method for improving external quantum efficiency of semiconductor LED

An external quantum efficiency, semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of no major breakthrough, poor light resistance, thermal oxygen stability, poor light transmittance, etc., to improve luminous efficiency and luminous flux, improve External quantum efficiency, good dispersion effect

Inactive Publication Date: 2006-09-27
FUJIAN NORMAL UNIV
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Problems solved by technology

So far, there have been research reports on high-refractive polymer resins, most of which use complex components containing heavy metal atoms such as bromine, iodine, sulfur, phosphorus, nitrogen or lead, barium, or aromatic condensed rings and multiple alicyclic structures. Increased to 1.7, but it is difficult to be practical due to easy yellowing and discoloration, poor light transmittance, poor dispersion, poor light resistance, thermal oxygen stability, or odor and odor
[0005] In view of the above, improving the external quantum efficiency of LED is the root of improving its luminous efficiency and luminous flux, and there has been no major breakthrough so far

Method used

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  • Method for improving external quantum efficiency of semiconductor LED
  • Method for improving external quantum efficiency of semiconductor LED

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Embodiment 1

[0020]Take a single standard φ5mm blue LED (460nm±5nm) as an example. At present, its single luminous flux is 2.0lm, and its external quantum efficiency is usually 12-16%. Vacuum vapor coating or ion sputtering is used to coat the light-emitting surface of the LED with a layer Thickness is D TiO2 ±10nm TiO 2 The single luminous flux of the thin film is 2.2lm, and the luminous efficiency is increased by about 10%.

Embodiment 2

[0022] Take a single standard φ5mm blue LED (460nm±5nm) as an example. At present, its single luminous flux is 2.0lm, and its external quantum efficiency is usually 12-16%. Vacuum vapor coating or ion sputtering is used to coat the light-emitting surface of the LED with a layer Thickness is D ZrO2 ±10nm ZrO 2 The single luminous flux of the thin film is 2.4lm, and the luminous efficiency is increased by about 20%.

Embodiment 3

[0024] Take a single standard φ5mm blue LED (460nm±5nm) as an example. At present, its single luminous flux is 2.0lm, and its external quantum efficiency is usually 12-16%. Vacuum vapor coating or ion sputtering is used to coat the light-emitting surface of the LED with a layer Thickness is D Ta2O5 ±10nm Ta 2 o 5 The single luminous flux of the thin film is 2.3lm, and the luminous efficiency is increased by about 15%.

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Abstract

This invention relates to a method for improving semiconductor light emitting diode outer quantum efficient, which coats at least one layer of film on the LED's surfacing. The refractivity of film is between LED semiconductor light medium and packaging resin or packaging air, wherein the three mediums' refractivity as follows:etasemiconductor>etax>etapackaging, then packaging with high molecule resin. Because the former, present and back film refractivity' relationship as follows: etax2=etax-1 .etax+1, so their order as follows: etax+1>etax>etax-1,wherein X=1,2,3,4,5,7 or 9. Because the film has high translucent and better color radiation, so it improves LED chip's outer quantum efficient, radiation efficient and luminous flux.

Description

technical field [0001] The invention relates to a method for improving the external quantum efficiency of a semiconductor light emitting diode (LED). Background technique [0002] Semiconductor light-emitting diodes (LEDs) have attracted much attention due to their special physical and chemical properties. Such as high efficiency and energy saving, the power consumption is one-eighth of incandescent lamps and one-half of fluorescent lamps; the solid structure can be used in harsh environments, and the service life is as long as 100,000 hours, which is ten times higher than the current incandescent lamps; No mercury, chromium and other toxic heavy metal elements, easy to recycle, and realize real green lighting; simple structure, small size, light weight, fast response, low working voltage, safety, shock resistance and other advantages, it is internationally recognized as a new alternative to incandescent lamps in the near future A generation of light sources. In order to s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/56
Inventor 章文贡章仪
Owner FUJIAN NORMAL UNIV
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