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Semiconductor device and its production method

A technology of semiconductors and devices, applied in the field of semiconductor devices of active matrix liquid crystal displays, can solve the problems of shortening heating time, reducing the accuracy of mask plate position and the like.

Inactive Publication Date: 2006-12-20
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When such a large glass substrate is used, a large problem arises from the shrinkage and deformation of the substrate caused during the heat treatment necessary in the manufacturing semiconductor process, reducing the accuracy of mask plate position accuracy and the like
In fact, since the most commonly used 7059 glass has a deformation temperature of 593°C, the usual thermal crystallization method causes large-area deformation of the substrate.
Moreover, in addition to the problem caused by the temperature, the heating time required for crystallization in the general method will be more than tens of hours, therefore, this heating time needs to be shortened.

Method used

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  • Semiconductor device and its production method
  • Semiconductor device and its production method
  • Semiconductor device and its production method

Examples

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no. 1 Embodiment

[0042] figure 1 It is a schematic top view diagram of the liquid crystal display structure of the embodiment of the present invention. The picture element part 10 shown in the figure has many picture element electrodes supplied in a matrix shape (not shown), and the peripheral circuit part 20 is used as driving each A drive circuit for picture element electrodes. According to the present invention, thin film transistors (TFTs) for driving picture elements and peripheral circuits constituted by them are formed on an insulating substrate (ie, a glass substrate). Actually, the peripheral circuit part is constituted as a CMOS circuit in which a P-channel type TFT s (PTFT) and N-channel TFT s (NTFT) is composed of a silicon film (called a single crystal film) with a crystallized growth in the lateral direction, and the image element part is a TFT composed of an amorphous silicon film as NTFT s .

[0043] Figures 2A to 2D is a schematic diagram showing a circuit manufacturing ...

no. 2 Embodiment

[0065] A second embodiment is shown in Figures 5A to 5E and Figure 6A and 6B middle. After forming a silicon oxide film 502 with a thickness of 1000 to 5000 angstroms, such as 2000 angstroms, on the surface of the glass substrate 501, form an amorphous silicon film with a thickness of 300 to 1500 angstroms, such as 500 angstroms, on it by plasma CVD, and then , and then form a silicon oxide film 504 with a thickness of 500 to 1500 angstroms, for example, 500 angstroms. It is preferable to form these films continuously. Then, the silicon oxide film 50A is selectively etched to form a window region 506 into which nickel is introduced. In the manufacture of TFTs used as peripheral circuits s The window area 506 is formed in the area, and the window area 506 is not formed in the picture element portion.

[0066] Next, a nickel salt thin film 505 is formed by spin coating. Next, the spin coating method will be explained. First, nickel acetate or nickel nitrate is diluted wi...

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Abstract

Nickel is introduced to a predetermined region of a peripheral circuit section, other than a picture element section, on an amorphous silicon film to crystallize from that region. After forming gate electrodes and others, sources, drains and channels are formed by doping impurities, and laser is irradiated to improve the crystallization. After that, electrodes / wires are formed. Thereby an active matrix type liquid crystal display whose thin film transistors (TFT) in the peripheral circuit section are composed of the crystalline silicon film whose crystal is grown in the direction parallel to the flow of carriers and whose TFTs in the picture element section are composed of the amorphous silicon film can be obtained.

Description

[0001] This application is a divisional application of the application dated May 26, 1994, the application number is 99120260.0, and the invention title is "semiconductor device and its manufacturing method". technical field [0002] The present invention relates to semiconductor devices of TFTs (Thin Film Transistors) mounted on an insulating substrate such as glass. In particular, it relates to semiconductor devices used in active matrix type liquid crystal displays. Background technique [0003] Has a TFT mounted on an insulating substrate such as glass s Semiconductor devices used in active matrix liquid crystal displays, image sensors and similar devices, using TFT s are well known as motivating image elements. [0004] Typically, TFTs made of thin-film silicon semiconductors are used in these devices. Thin-film silicon semiconductors can be roughly classified into two types; one is a semiconductor composed of amorphous (amorphous) silicon (α-Si), and the other is a ...

Claims

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Application Information

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IPC IPC(8): H01L21/84H01L21/336H01L21/20G02F1/136H01L21/00H01L27/092H01L27/12H01L29/04H01L29/78H01L29/786
CPCH01L21/324H01L27/1214H01L29/78696
Inventor 张宏勇高山彻竹村保彦宫永昭治
Owner SEMICON ENERGY LAB CO LTD
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