Production of iron-doped zinc sulfide growth thin film by growth

A thin film growth, zinc sulfide technology, applied in gaseous chemical plating, semiconductor/solid-state device manufacturing, coating, etc., can solve the problems of not being able to put into large-scale production, low productivity, and unpopular equipment

Inactive Publication Date: 2007-01-17
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the above-mentioned background technology: the existing equipment is not popular, the cost is high, the productivity is low, and it cannot be put into large-scale production; Is to provide Fe-doped ZnS thin film growth preparation technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Under different growth pressures, in insulating Al 2 o 3 ZnFeS film was grown on the substrate.

[0016] Using self-assembled low-pressure metal-organic chemical vapor deposition (MOCVD) equipment, the cleaned Al 2 o 3 The substrate is placed on the graphite base in the metal-organic vapor deposition growth chamber, the pressure of the growth chamber is controlled at low pressure under the action of the mechanical pump and the low-pressure controller, and the high-frequency induction power supply is adjusted to make the plasma frequency 0.4MHz. When the growth temperature of the substrate rises to 600° C., 99.9999% high-purity hydrogen purified by a palladium tube is introduced to treat the substrate for 10-20 minutes. Then when the temperature is adjusted to 350°C, hydrogen sulfide H carried by high-purity hydrogen gas is introduced in sequence. 2 S, whose flow rate is 10ml / min, iron pentacarbonyl Fe(CO) 5 The temperature of the source was controlled at 10°C, and ...

Embodiment 2

[0019] At the optimum growth temperature of 350°C, changing Fe(CO) 5 The flux growth of ZnFeS single crystal thin film.

[0020] Other conditions are the same as above, just change Fe(CO) 5 The flow rate is 1.5 or 3 or 5ml / min. At this time, the grown ZnFeS is a single crystal thin film, and when the Fe flow rate is 6ml / min, ZnFeS transforms from a hexagonal single crystal to a mixed hexagonal and cubic polycrystalline thin film structure. Therefore, only when the Fe flow rate is below 5ml / min can ZnFeS be guaranteed to be a single crystal film.

Embodiment 3

[0022] ZnFeS single crystal thin films were grown on GaAs substrates.

[0023] Using a (100) GaAs substrate, place the cleaned GaAs substrate on the graphite base in the metal-organic vapor deposition growth chamber, control the pressure of the growth chamber at 76Torr under the action of a mechanical pump and a low-pressure controller, and feed the The tube purifies 99.999% high-purity hydrogen, and when the substrate growth temperature rises to 600°C, the substrate is treated for 10 minutes. Then adjust the temperature to the growth temperature of 320°C, and sequentially introduce hydrogen sulfide H carried by high-purity hydrogen. 2 S, whose flow rate is 10ml / min, iron pentacarbonyl Fe(CO) 5 The temperature of the source is controlled at 10°C, and the flow rate is 1-4ml / min. The temperature of the DMZn source is controlled at -27°C, and the flow rate is 8ml / min to the growth chamber. The total hydrogen carrier gas is controlled at 2L / min, and the flow ratio of group II hy...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention is concerned with preparing zinc sulfide single-crystal film with iron by low-pressure metal organic chemistry gaseous phase sediment equipment. That is: puts the cleaning semiconductor underlay on the graphite base of the growth room, controls the pressure of the growth room at low, passes over the high-pure hydrogen in the growth room, adjusts high frequency high frequency to heat the graphite base, disposals the underlay 10 minutes -20 minutes at 600 centigrade, uses the cold-trap equipment to control the temperature source of the zinc ethyl and iron pentacarbonyl at the needing value in order to reduces the temperature of the underlay at the best growth temperature, passes over the certain flux hydrogen sulfide (H2S)gas source taking by the high pure hydrogen, iron pentacarbonyl (Fe(CO)5) and zinc dimethyl (DMZn) to the growth room, namely completes the ZnFeS film growth at the condition of low pressure. The invention can get single orientation six-side and four-side ZnFeS single-crystal film with high Fe group.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor materials, and relates to a preparation technology for growing dilute magnetic (semimagnetic) semiconductor thin films with low-pressure metal organic chemical vapor deposition (MOCVD) equipment. Background technique: [0002] Diluted magnetic semiconductor (DMS) or semimagnetic semiconductor (SMS) doped with magnetic ions exhibits strongly spin-dependent optical and transport properties (J.K.Furdyna, J.Appl.Phys.64, R29(1988)), For example: strong magneto-optical effect (Zeman effect, Faraday rotation, etc.), increase of electron-hole effective g factor, negative magnetoresistance effect, etc., so as to prepare a new type of low-power consumption that integrates magnetism, light, and electricity. Semiconductor electronics lay the material and theoretical foundations. One of the milestones is the recent progress in ZnMnTe (D.Ferrand, J.Cibert et al, Phys.Rev.B, 63, 085201 (2001)) especiall...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C23C16/44
Inventor 张吉英冯秋菊申德振吕有明范希武李炳生
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap