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Organic electroluminescence device

An electroluminescent device, an organic technology, applied in the direction of electric solid devices, electrical components, semiconductor devices, etc., can solve the problems of activity damage, reduced visible light transmittance, etc., to reduce exciton quenching centers and increase electron efficiency. Injection area, the effect of improving efficiency

Active Publication Date: 2007-01-24
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the visible light transmittance of metal ytterbium decreases rapidly when its thickness exceeds 4nm (G.L.Ma, G.Z.Ran, A.G.Xu, Y.P.Qiao, W.Q.Zhao, B.R.Zhang, S.K.Wu, and G.G.Qin, Appl.Surf.Sci.252, 3580(2006)), and because of its activity, it is easily destroyed by water and oxygen in the air, which limits its application

Method used

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Examples

Experimental program
Comparison scheme
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Embodiment 1

[0022] The prepared structure is ITO / NPB 50nm / Alq 3 50nm / cathode buffer / Al 100nm devices.

[0023]The etched ITO glass is used as the substrate of the OLED, and the cleaning process is as follows: ultrasonically clean once with 60°C deionized water containing surfactant, then ultrasonically rinse twice with 60°C clean deionized water, and rinse with cold deionized water Ultrasonic rinsing twice, drying in a clean bench with infrared light. All films were prepared by thermal evaporation in a vacuum chamber with a background pressure of 1.0×10 -3 Pa, the light emitting area of ​​the device is 3×3mm 2 . 50nm thick N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB) was used as the hole transport layer, which The evaporation rate is 0.1nm / s; the 50nm-thick tris(8-hydroxyquinoline)aluminum is used as the electron transport layer and the light-emitting layer, and the evaporation rate is 0.1nm / s. After the evaporation of the organic layer is completed, the devic...

Embodiment 2

[0032] Devices were prepared according to the method of Example 1, all films were prepared by vacuum evaporation, wherein the cathode buffer layer material was replaced by YbF 3 / Yb, the evaporation rate is 0.03-0.05nm / s, and the thickness range is 0.5nm-30nm. The optimal thickness of the cathode buffer layer material is 3.0nm / 14.5nm, and the brightness of the device reaches 1cd / m2 at 3.6V under the drive of DC voltage 2 , the device current density is 500mA / cm at 10.8V 2 , the brightness is 11560cd / m 2 . The injection mechanism is the cathode buffer layer YbF 3 Chemically react with the hot atoms of Yb activated by vacuum evaporation to generate Yb at the interface, doped into the organic layer to form Alq which is conducive to electron injection 3 negative ions, which lowers the electron injection barrier, while YbF 3 The organic layer is protected from being damaged by Yb thermal atoms.

[0033] Device Cathode Structure

[0034] From the above two examples we...

Embodiment 3

[0036] Devices were prepared according to the method of Example 1, all films were prepared by vacuum evaporation, wherein the cathode buffer layer material was replaced by YbF 2 , the evaporation rate is 0.03-0.05nm / s, and the thickness range is 0.5nm-30nm. The optimal thickness of the cathode buffer layer material is 2.0nm, and the brightness of the device reaches 1cd / m at 4.2V under the drive of DC voltage 2 , the device current density is 500mA / cm at 11.4V 2 , the brightness is 9800cd / m 2 . The injection mechanism is the cathode buffer layer YbF 2 Chemically react with cathode metal Al to generate low work function metal Yb, which is doped into the organic layer to form Alq which is beneficial to electron injection 3 Negative ions lower the electron injection barrier.

[0037] Device Cathode Structure

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Abstract

This invention relates to an organic electro-luminance device including an anode layer, a cathode layer, an organic function layer in between and a cathode buffer layer between the cathode and the organic function layers, in which, at least one material from the buffer layer is selected from the La series metal, its halides, oxides or carbonates of the La series metals, the buffer layer is matched with the metal cathode to reduce the electronic injection barrier between the metal cathode and the organic layer so as to protect the organic layer of the cathode interface and increase the effective injection area and its rate.

Description

technical field [0001] The present invention relates to an organic electroluminescent device (OLED), and more particularly, to an organic electroluminescent device with a cathode buffer layer. Background technique [0002] Organic electroluminescent displays have a series of advantages such as self-illumination, low-voltage DC drive, full curing, wide viewing angle, light weight, simple composition and process, etc. Compared with liquid crystal displays, organic electroluminescent displays do not need a backlight source Large, low power, and its response speed can reach 1000 times that of liquid crystal displays, but its manufacturing cost is lower than that of liquid crystal displays with the same resolution. Therefore, organic electroluminescent displays have broad application prospects. [0003] The general structure of an organic electroluminescent device includes in turn: a substrate, an anode, an organic layer, and a cathode, and the organic functional layer includes a...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/54
Inventor 邱勇李扬张锐段炼王立铎
Owner TSINGHUA UNIV
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