Silicon film forming equipment

Abstract

The invention discloses a silicon film forming device, comprising: a film forming chamber (10); a silicon sputtering target (2) arranged in the chamber; a hydrogen supply circuit (102 or 102') for supplying hydrogen to the chamber; and A high-frequency power application device (antenna (1, 1'), power supply (PW), etc.) that applies high-frequency power to the hydrogen gas supplied to the film forming chamber (10) to generate inductively coupled plasma, and uses the plasma to target ( 2) Perform chemical sputtering to form a silicon film on the substrate (S). Silane gas can also be used simultaneously. A gas storage unit (GR) may also be provided in the silane gas supply circuit (101). A desired silicon film can be formed inexpensively and at high speed at relatively low temperature.

Description

technical field [0001] The present invention relates to a silicon film forming device. Background technique [0002] Silicon films are used, for example, as materials for TFT (Thin Film Transistor) switches provided in pixels of liquid crystal display devices, and are used in the production of various integrated circuits, solar cells, and the like. It is also expected to be used as a non-volatile memory, a light-emitting element, and a photoactivator. [0003] As a silicon film forming method, various methods are known, for example, a method of forming an amorphous silicon film at a relatively low temperature by various CVD methods and PVD methods, and further performing, for example, 1000 steps of processing the amorphous silicon film formed in this way. ℃ heat treatment or heat treatment at 600 ℃ for a long time to form a crystalline silicon film, maintain the temperature of the substrate to be filmed at 600 ℃ to 700 ℃ and use CVD methods such as plasma CVD at low pressur...

AI Technical Summary

Problems solved by technology

[0008] When laser annealing is performed on an amorphous silicon film, a crystalline silicon film can be obtained at a relatively low temperature, but since a laser irradiation process is required and a laser with a very high energy density must be irradiated, the production cost of the crystalline silicon film in this case high

Moreover, it is difficult to uniformly irradiate laser light to each part of the film, and due to laser irradiation, dehydrogenation sometimes occurs and the film surface is rough, so it is difficult to obtain a crystalline silicon film with good quality.

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