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Magnetic tunnel structure suitable for device and its use

A magnetic tunnel junction and device technology, applied in the field of magnetic tunnel junction, can solve the problems of low signal-to-noise ratio, poor repeatability and stability, achieve high signal-to-noise ratio, good repeatability and stability, and meet large-scale productization Effect

Active Publication Date: 2007-06-27
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcomings of existing magnetic tunnel junctions such as poor repeatability and stability and low signal-to-noise ratio, so as to provide a magnetic tunnel junction with good repeatability and stability and high signal-to-noise ratio by changing the composition and structure of the barrier layer. , and a magnetic tunnel junction suitable for deviceization that can meet the requirements of large-scale production, and its application

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Using high vacuum magnetron sputtering equipment on SiO 2 On the Si substrate, a buffer layer (Bufferlayer) Ru with a thickness of 5nm, a pinning layer (Pinning layer) IrMn, and a pinned soft magnetic layer (Pinned FM layer, FM1) Co with a thickness of 3nm were deposited in sequence. 90 Fe 10 Then deposit 0.4nm Ti, then deposit 0.8nm Al, plasma oxidize for 50 seconds, and finally deposit 0.4nm Ti again, the composite film layer Ti / AlO / Ti is the insulating layer; Deposit a free soft magnetic layer (Free FM layer, FM2) Co with a thickness of 3nm 90 Fe 10 and a capping layer Ru with a thickness of 4nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; rate.

[0020] The deposited magnetic multilayer film undergoes post-processing such as conventional micromachin...

Embodiment 2

[0022] Using high vacuum magnetron sputtering equipment on SiO 2 Ru with a thickness of 5nm and Cu with a thickness of 15nm are deposited successively on the Si substrate as a buffer layer (Buffer layer), a pinning layer (Pinning layer) IrMn with a thickness of 12nm, and a pinned soft magnetic layer (Pinning layer) with a thickness of 5nm ( Pinned FM layer, FM1)Co 75 Fe 25 Then deposit 0.4nm TiO, then deposit 0.8nm Al, plasma oxidize for 50 seconds, and finally deposit 0.4nm TiO again, the composite film layer TiO / AlO / TiO is the insulating layer; Deposit a free soft magnetic layer (Free FM layer, FM2) Co with a thickness of 5nm 75 Fe 25 and a capping layer Ta with a thickness of 6nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; rate.

[0023] The deposited mag...

Embodiment 3

[0025]Using high vacuum magnetron sputtering equipment on SiO 2 On the / Si substrate, deposit a buffer layer (Bufferlayer) Nb with a thickness of 10nm, a pinning layer (Pinning layer) IrMn, and a pinned soft magnetic layer (Pinned FM layer, FM1) Co with a thickness of 5nm. 2 MnSi; then deposit 0.4nm TiC, then deposit 0.8nm Al, plasma oxidation for 50 seconds, and finally deposit 0.4nm TiC again, the composite film layer TiC / AlO / TiC is the insulating layer; on the composite barrier layer A free soft magnetic layer (Free FM layer, FM2) Co with a thickness of 5 nm was deposited sequentially 2 MnSi and a capping layer Pt with a thickness of 5nm. The growth conditions of the above-mentioned magnetic multilayer film: prepared vacuum: 5×10 -7 Pa; high-purity argon gas pressure for sputtering: 0.07 Pa; sputtering power: 120 watts; sample holder rotation rate: 20rmp; growth temperature: room temperature; rate.

[0026] The deposited magnetic multilayer film undergoes post-processin...

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Abstract

This invention relates to a device-like magnetic tunnel junction including a substrate and a buffer layer on it, in which, a nail prick layer, a nailed soft magnetic layer, an insulation layer, a free soft magnetic layer and a covering layer are deposited on the buffer layer orderly characterizing that the insulation layer is a compound film layer, the top and bottom are metal layers of 0.2-2nm thick or insulator potential layer, the mid layer is an Al2O film layer of 0.5-5 thick. The junction can be widely used in various devices with the magnetic tunnel junction as the core.

Description

technical field [0001] The invention relates to a magnetic tunnel junction suitable for deviceization, in particular to a magnetic tunnel junction with a new potential barrier layer and its application in devices. Background technique [0002] Since Julliére discovered the Tunnel Magnetoresistance (TMR) effect in Fe / Ge / Co sandwich composite multilayer films in 1975, people have studied a series of FM / I(S) / FM composite multilayer films (magnetic Materials / insulators or semiconductors / magnetic materials) have been extensively and systematically studied. In this type of FM / I(S) / FM composite multilayer film, FM represents a ferromagnetic metal or semi-metal layer, and I(S) represents an insulator (or semiconductor) barrier layer. Studies have found that this kind of composite multilayer film has the characteristics of low saturation magnetic field and small coercive force, and can be applied to magnetic sensors, magnetic random access memory (MRAM) memory cells and other spintr...

Claims

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Application Information

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IPC IPC(8): H01L43/08H01L43/10H01F10/00H01F10/32G11C11/16G11C11/15G11B5/39G01R33/09
Inventor 魏红祥马明覃启航韩秀峰詹文山
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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