Suface procesing method by blowing submicron particles

a technology of submicron particles and suface, which is applied in the direction of metal rolling stands, metal-working apparatus, metallic material coating processes, etc., can solve the problems of troublesome maintenance of the apparatus, low processing rate of the etching method, and needing an expensive apparatus, so as to enhance the stirring effect of the compressed air and maintain the stirring effect effectively

a technology of submicron particles and suface, which is applied in the direction of metal rolling stands, metal-working apparatus, metallic material coating processes, etc., can solve the problems of troublesome maintenance of the apparatus, low processing rate of the etching method, and needing an expensive apparatus, so as to enhance the stirring effect of the compressed air and maintain the stirring effect effectively

US20010007808A1Inactive Publication Date: 2001-07-12MISHIMA AKIO +1
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  • Suface procesing method by blowing submicron particles
  • Suface procesing method by blowing submicron particles
  • Suface procesing method by blowing submicron particles

Examples

Experimental program
Comparison scheme
Effect test

example 2

[0095] Alumina submicron particles of an average particle size of 0.6 .mu.m were blown against the surface of a ferrite substrate under the same surface processing conditions as those employed for Example 1. A dense alumina thin film was formed.

[0096] A dense alumina thin film was formed also by using alumina submicron particles of an average particle size of 0.2 .mu.m.

comparable example 1

[0097] Alumina submicron particles of an average particle size of 5 .mu.m were blown against the surface of a ferrite substrate under the same surface processing conditions as employed in Example 1. The alumina submicron particles were not deposited at all and the surface of the ferrite substrate was etched.

example 3

[0098] Alumina submicron particles of an average particle size of 0.6 .mu.m were blown against the surface of a ferrite substrate for etching.

[0099] Surface processing conditions were the same as those employed in Example 1, except that the incident angle was 40.degree. C.

[0100] The width of lines forming a pattern to be formed by etching was 50 .mu.m. A Photosensitive urethane rubber film of 5 .mu.m in thickness was used as an etching resist.

[0101] During the etching process, the ferrite substrate was rotated at 30 rpm. The alumina submicron particles were blown for sixty seconds.

[0102] The surface of the ferrite substrate was etched by a depth of 2 .mu.m, the inclination of the side surfaces of the lines of the pattern was about 60.degree., and the etched portions were mirror-finished in a surface roughness R.sub.max of 0.06 .mu.m.

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Abstract

A surface processing method by blowing submicron particles is disclosed, in which submicron particles are blown against a surface of a work to deposit a layer of the material of the particles on a surface of the work, or etching the surface of the work. The processing method uses blowing air stream containing submicron particles having average particles size ranging between 0.01 and 3.0 mum. The deposition or etching is effected depending on an incident angle of the particles to the surface of work. According to the method deposition of the material can be effected with very high deposition rate and in case of etching very smooth etched surface is obtained.

Description

[0001] The present invention relates to a surface processing method for etching the surface of a work, such as a glass substrate or a semiconductor substrate, or for depositing a film of a material over the surface of a work and, more specifically, to a novel surface processing method employing submicron particles.[0002] The fabrication of a functional element, such as a semiconductor integrated circuit chip, a printed circuit board or a magnetic head, requires various minute processing techniques such as advanced etching techniques or thin film forming techniques.[0003] Under such circumstances, researches have been conducted in various fields and there have been developed advanced processing techniques employing a resist mask for etching the surface of a semiconductor wafer, such as an ion beam etching method (IBE) using electrically accelerated argon ions for physically etching the surface of a work and a reactive ion etching method (RIE) using activated fluorine or chlorine gas ...

Claims

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Application Information

Patent Timeline
12 Jul 2001
Publication
US20010007808A1
IPC
B05B7/14; B05B7/16; B05B15/00; B05D1/12; B24C1/00; B24C9/00; B24C11/00; B64C11/00; B64F5/00; C03C17/00; C03C19/00; C23C4/12; C23C24/04
CPC
B05B7/1404; B05B7/1445; B05B7/166; B05B15/003; B05D1/12; B24C1/00; B24C9/006; B24C11/00
Inventors
MISHIMA, AKIO; KOJIMA, NAOTO