Photoelectric device

Abstract

The present invention provides a photoelectric conversion device that improves photoelectric conversion efficiency with the interaction between a transparent substrate with a transparent conductive film, an antireflection film, and a photoelectric conversion unit. The antireflection film contains fine particles having an average particle diameter of 0.01 to 1.0 mum and has an uneven surface derived from the fine particles. The glass sheet with a transparent conductive film has a light transmittance of 75% or more in the wavelength region of 800 nm to 900 nm. The photoelectric conversion unit includes at least a photoelectric conversion unit including a photoelectric conversion layer having a band gap of 1.85 eV or less.

Description

[0001] The present invention relates to a photoelectric conversion device. More specifically, the present invention relates to a photoelectric conversion device including a photoelectric conversion layer of semiconductor material that has a relatively small band gap and photosensitivity even in a longer wavelength region.[0002] In a thin film-type photoelectric conversion device that uses a glass sheet as a substrate, a transparent conductive film, acting as a transparent electrode, is formed on the glass sheet, and a thin film photoelectric conversion unit including a photoelectric conversion layer is formed on the transparent conductive film. A tin oxide film often is employed as the transparent conductive film. The unevenness generated on the surface of the transparent conductive film with the growth of crystal grains has the effect of improving photoelectric conversion efficiency by trapping incident light in the photoelectric conversion layer or in the vicinity of the layer (i....

AI Technical Summary

Benefits of technology

[0008] Therefore, with the foregoing in mind, it is an object of the present invention to provide a photoelectric conversion device that includes a photoelectric conversion layer having high photoelectric conversion efficiency even in a relatively long wavelength region, i.e., a photoelectric conversion layer having a relatively small band gap, and that is provided with a structure capable of improving the photoelectric conversion efficiency of the photoelectric conversion layer. In particular, it is an object of the present invention to provide a photoelectric conversion device that improves the photoelectric conversion efficiency of a crystalline silicon based thin film photoelectric conversion unit without relying only on the light trapping effect obtained by a transparent conductive film.

Problems solved by technology

However, when the film thickness is increased simply to increase optical absorption, the manufacturing cost becomes higher.

However, a conventional photoelectric conversion device is not always provided with a structure suitable for the characteristics of its photoelectric conversion layer.

However, this may degrade the quality of a crystalline silicon based thin film to be formed on the transparent conductive film.

Even if the crystalline silicon based thin film is formed via other thin films, as in the tandem structure, the surface unevenness with a large degree of slope causes degradation in the crystallinity of the crystalline silicon.

Even when using a photoelectric conversion layer that renders the photoelectric conversion efficiency in a relatively long wavelength region important, the conventional photoelectric conversion unit does not always adjust properly the characteristics of other members and thin films to be used with the photoelectric conversion layer, particularly their transmittance and contributions to the light trapping effect in that wavelength region.

Images