Semiconductor laser device

Abstract

The invention provides a semiconductor laser device with good temperature characteristic, high polarization rate and high refraction light output. A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf<Rr, W1<W3, and W2<W4. A width Wf of the ridge at the front end face, and a width Wr of the ridge at the rear end face satisfy Wf>Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

Description

technical field [0001] The present invention relates to a semiconductor laser device having a high thermally saturated optical output and a low operating current in a high-temperature high-output operating state. Background technique [0002] Semiconductor laser devices (hereinafter also referred to as semiconductor lasers) are widely used in various fields. For example, AlGaInP series semiconductor lasers are widely used as light sources in the field of optical disk systems represented by DVD because they can obtain red laser light with a wavelength of 650 nm. Among semiconductor lasers, there are known lasers in which a dielectric film is used for the current block layer in the manufacturing process of the semiconductor laser in order to reduce the manufacturing cost and shorten the lead time, so as to reduce the number of times of crystal growth (for example, refer to Patent Document 1). [0003] Figure 21 An example of an AlGaInP series semiconductor laser having such...

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Problems solved by technology

[0020] Therefore, just to make the effective refractive index difference (ΔN) 3×10 -3 ~7×10 -3 However, simply forming a groove between the wing area and the ridge cannot fully satisfy good temperature characteristics, high polarization ratio, FFP without disturbance, and high kink light output.

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