Method of forming low-k films

Abstract

To deposit silicon carbide into a substrate, there is introduced into a reaction zone a gas including source gas of silicon, carbon, oxygen and an inert gas. An electric field is generated using low and high frequency RF power to produce a plasma discharge in the reaction zone to cause the deposition.

Description

FIELD OF THE INVENTION [0001] The present invention relates to oxygen doped silicon carbide layers referred to herein as SiCO and, more particularly to a method of forming low dielectric constant, low leakage current with high elastic modulus and hardness oxygen doped silicon carbide layers. BACKGROUND OF THE INVENTION [0002] Integrated circuits have evolved into complex devices that include multiple levels of metal layers to electrically interconnect discrete layers of semiconductor devices on a single semiconductor chip. Recently, with the evolution of higher integration and higher density of integrated circuit components, the demand for greater speed of the data transfer rate is required. For this reason, an insulating film having low leakage current, low dielectric constant with high elastic modulus and hardness, to give the small RC delay is employed. [0003] As the device dimensions continuously shrink, the RC time delay of the interconnect system becomes one of the most import...

AI Technical Summary

Benefits of technology

The SiCO films exhibit a dielectric constant less than 3.0, leakage current less than 5×10−9 A / cm2, and high elastic modulus and hardness, maintaining stability even when exposed to air, making them suitable for advanced integrated circuit applications and effective copper diffusion barrier layers.

Problems solved by technology

Integrated circuits have evolved into complex devices that include multiple levels of metal layers to electrically interconnect discrete layers of semiconductor devices on a single semiconductor chip.

As the device dimensions continuously shrink, the RC time delay of the interconnect system becomes one of the most important limitation factors to the integrated circuits performance.

Furthermore, the stability of the fluorine doped silicon oxygen films with regard to moisture is problematic.

However, the process of introducing porosity is complex and is slow.

The use of copper as the interconnect material has various problems.

For example, copper is easily diffused into the low dielectric constant insulating film from the copper wiring, thus increasing the leakage current between the upper and lower wiring.

However, the process is difficult.

However, there is no report on the identification of the dominant path for copper interconnects.

This inert gas plasma treatment only minimizes the top surface of the silicon carbide film from getting oxidized, however, no changes / improvements to the film properties are observed.

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