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Carbon nanotube array, material, electronic device, process for producing carbon nanotube array, and process for producing field effect transistor

a carbon nanotube array and carbon nanotube technology, applied in the field of carbon nanotube array, can solve the problems of m-cnt remaining after cutting, method not applicable to carbon nanotube array, and selective production of only s-cn

Inactive Publication Date: 2017-03-16
THE UNIV OF TOKYO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention allows for the removal of m-CNTs from a carbon nanotube array made up of both s-CNTs and m-CNTs. This can be done using a simple process that is different from thermocapillary flow. Additionally, the invention results in a carbon nanotube array where the density of s-CNTs is high.

Problems solved by technology

A method for selectively producing an s-CNT has been explored but a method for selectively producing only an s-CNT has not been established yet.
Therefore, this method has a problem that the method is not applicable to a carbon nanotube array in which the length of each carbon nanotube is long.
In addition, in the case in which the method is applied to the carbon nanotube array in which the length of each carbon nanotube is long, there arises a problem that even when the m-CNT is cut, the m-CNT remains after cutting.
Due to self Joule heating of the m-CNT, the thin film in the vicinity thereof is torn and / or broken by the thermocapillary flow.
In the method disclosed in NPL 2, there is a problem that the step is complicated because it is required to provide a step of removing the m-CNT by reactive ion etching and the like after a step of generating thermocapillary flow.
Therefore, there is another problem that properties required for an electronic material formed with the carbon nanotube array cannot be obtained.
Further, in the method disclosed in NPL 2, there is still another problem that the material for generating thermocapillary flow is limited to α,α,α′-tris(4-hydroxyphenyl-1-ethyl-4-isopropylbenzene or the like.

Method used

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  • Carbon nanotube array, material, electronic device, process for producing carbon nanotube array, and process for producing field effect transistor
  • Carbon nanotube array, material, electronic device, process for producing carbon nanotube array, and process for producing field effect transistor
  • Carbon nanotube array, material, electronic device, process for producing carbon nanotube array, and process for producing field effect transistor

Examples

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Effect test

example 1

[0088]

[0089]According to methods described in WO2011 / 108545, S. Chiashi, H. Okabe, T. Inoue, J. Shiomi, T. Sato, S. Kono, M. Terasawa, S. Maruyama*, “Growth of Horizontally Aligned Single-Walled Carbon Nanotubes on the Singular R-Plane (10-11) of Quartz”, J. Phys. Chem. C, (2012), 116, 6805-6808, and T. Inoue, D. Hasegawa, S. Badar, S. Aikawa, S. Chiashi, S. Maruyama, “Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates”, J. Phys. Chem. C, (2013), 117, (22), 11804-11810, a horizontally aligned carbon nanotube array having s-CNTs and m-CNTs was prepared.

[0090]Specifically, using a crystal substrate having an r-cut surface (manufactured by Hoffman Materials Inc.), a resist pattern was formed on the substrate by photolithography. A catalyst was deposited on the entity of a substrate provided with a resist by vacuum deposition and then the resist was removed so that a catalyst (Fe metal) pattern was formed on the substr...

example 2

[0126] to in Example 1 were performed except that instead of in Example 1, was used and instead of , was used.

[0127]

[0128]A 1 wt % anisole solution of PMMA was prepared. The solution was applied to the carbon nanotube array having m-CNTs and s-CNTs by spin coating and then the solution was removed at 120° C. Thus, a layer made of PMMA was formed on the carbon nanotube array having m-CNTs and s-CNTs. When the thickness of the layer was measured using a stylus type surface profiler (Dektak XT, manufactured by ULVAC, Inc.), it was confirmed that the thickness is 20 to 50 nm.

[0129]

[0130]The layer made of PMMA on the substrate obtained in the above was removed with acetone.

[0131]Specifically, the substrate obtained in the above was immersed in acetone for several minutes and rinsed with isopropanol and distilled water. Thereafter, the layer made of PMMA was removed by drying the substrate.

[0132]From the results of the ON / OFF ratio measurement of the FET (10,000), SEM image observat...

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PUM

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Abstract

In order to obtain a carbon nanotube array including no m-CNTs through simple steps using a mechanism that is different from thermocapillary flow, there are provided a process for producing a carbon nanotube array including (A) a step of preparing a carbon nanotube array in which m-CNTs and s-CNTs are horizontally aligned; (B) a step of forming an organic layer on the carbon nanotube array; (C) a step of applying voltage to the carbon nanotube array in a long axis direction of the carbon nanotubes constituting the carbon nanotube array in the air; and (D) a step of removing the organic layer, and a carbon nanotube array obtained by the process.

Description

TECHNICAL FIELD[0001]The present invention relates to a carbon nanotube array, a material, an electronic device, a process for producing a carbon nanotube array, and a process for producing a field effect transistor. Priority is claimed on Japanese Patent Application No. 2014-40003, filed Mar. 1, 2014, the content of which is incorporated herein by reference.[0002]The present invention particularly relates to a carbon nanotube array in which semiconducting carbon nanotubes are horizontally aligned densely, specifically at a density of 1 line / μm or more, and a process for producing the same.[0003]The present invention relates to a material formed with the carbon nanotube array, for example, an electronic material, an optical material, or an electrochemical material.[0004]The present invention relates to an electronic device formed with the carbon nanotube array, specifically, a field effect transistor (FET), a solar cell, a chemical sensor, a photosensor, an optical element, or a ter...

Claims

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Application Information

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IPC IPC(8): H01L51/00D04H1/4242D04H1/74C01B31/02H01L51/05
CPCH01L51/0048C01B31/0226C01B31/0253H01L51/0558D04H1/74D04H1/4242Y10S977/938C01B2202/22B82Y40/00B82Y30/00Y10S977/742Y10S977/842C01B2202/08B82Y10/00H01L29/775H01L29/0673C01B32/16C01B32/168H10K85/221H10K10/484H10K71/191H10K71/40H10K71/00
Inventor MARUYAMA, SHIGEOCHIASHI, SHOHEIOHTSUKA, KEIGOINOUE, TAIKI
Owner THE UNIV OF TOKYO