Photothermal conversion material

Inactive Publication Date: 2000-05-23
YAMAMOTO CHEM INC
View PDF4 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The object of the present invention is provide a photothermal conversion material which has high sensitivity to semiconductor lasers having an emission band in the near-infrared region (750 nm.about.900 nm) of the spectrum and can b

Problems solved by technology

In the technology comprising converting laser light to heat for image recording (laser thermal recording technology), a photothermal conversion material (light-to-heat converter) suited to the wavelength of a laser is used for conversion of absorbed laser light to heat to form an image but unless the laser output is raised to a fairly high level, the thermal energy required for image formation cannot be obtained.
The light-sensitive plate material is available either in the electrophotographic system using an organic photoconductor (OPC) or in the silver salt system utilizing a salt of silver but both materials have the disadvantage that a large-sized, expensive production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

example 1

A polyethylene terephthalate (PET) film with an average thickness of 5 .mu.m is coated with a solution containing 10 g of the binder Delpet 80N (acrylic resin, Asahi Chemical Industry) and 0.2 g of Compound No. 34 (Table 1) in 90 g of toluene-methyl ethyl ketone (1:1) using a wire bar in a dry film thickness of about 5 .mu.m to provide a sample.

A single-mode semiconductor laser (wavelength 830 nm) and optics were disposed so as to provide a condensed laser beam with a diameter of 10 .mu.m on the surface of said sample. The semiconductor laser was set so as to permit variation of the power of laser light reaching the surface over the range of 50.about.200 mW and the sample was irradiated with the single pulse at the pulse width of 20 .mu.s. After completion of the irradiation, the sample was examined under the light microscope. As a result, a through-hole with a diameter of about 10 .mu.m was formed when the power of laser light reaching the surface was 70 mW.

example 2

Except that 0.2 g of Compound No. 93 (Table 1) was used in lieu of Compound No. 34 (Table 1), the procedure of Example 1 was otherwise repeated. Examination of the irradiated sample under the light microscope revealed that a through-hole with a diameter of about 10 .mu.m was formed when the power of laser light reaching the surface was 80 mW.

example 3

A polyethylene terephthalate (PET) film having an average thickness of 5 .mu.m was coated with a solution containing 10 g of the binder Delpet 80N (acrylic resin, Asahi Chemical Industry) and 0.2 g of Compound No. 27 (Table 1) in 90 g of toluene-methyl ethyl ketone (1:1) using a wire bar in a dry film thickness of about 5 .mu.m to provide a sample.

A single-mode semiconductor laser (wavelength 790 nm) and optics were disposed so as to provide a condensed laser beam with a diameter of 10 .mu.m on the surface of said sample. The semiconductor laser was set so as to permit variation of the power of laser light reaching the surface over the range of 50.about.200 mW and the sample was irradiated with the single pulse at the pulse width of 20 .mu.s. After completion of the irradiation, the sample was examined under the light microscope. As a result, a through-hole with a diameter of about 10 .mu.m was formed when the power of laser light reaching the surface was 70 mW.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Nanoscale particle sizeaaaaaaaaaa
Nanoscale particle sizeaaaaaaaaaa
Massaaaaaaaaaa
Login to view more

Abstract

A photothermal conversion material showing high sensitivity to the light of a semiconductor laser having an emission frequency band of 750 nm DIFFERENCE 900 nm with a high photothermal conversion efficiency and a planographic original plate fabricated by using the transducer are provided. This photothermal conversion material comprises a phthalocyanine compound of the following general formula (I) wherein R1 DIFFERENCE R8 each represents alkyl or alkoxyalkyl; X1 DIFFERENCE X8 each represents sulfur or NR9, where R9 is hydrogen or alkyl.

Description

The present invention relates to a photothermal conversion material which absorbs laser light to generate heat.Keeping abreast with the recent advances in laser technology, studies have been undertaken on methods for converting laser radiation to the thermal energy necessary for recording, for example an image forming method utilizing a laser thermal recording material or a laser thermal transfer printing material for high-speed, high-density, high-image-quality recording or reproduction. Moreover, against the background of the wide-spread use of computers and rapidly developing electronics inclusive of improvements in digital image processing technology, development of the so-called computer-to-plate (CTP) technology for direct fabrication of printing plates from digital data is in progress.In the technology comprising converting laser light to heat for image recording (laser thermal recording technology), a photothermal conversion material (light-to-heat converter) suited to the w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B41M5/24B41C1/10B41M5/46B41M5/40C09B69/10C09B69/00
CPCB41C1/1033C09B69/108B41M5/465
Inventor FUJITA, SHIGEOTANIGUCHI, JUN-ICHITERAO, HIROSHIKUMAGAE, YOJIRO
Owner YAMAMOTO CHEM INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap