Photothermal conversion material
Patent Information
- Authority / Receiving Office
- US · United States
- Current Assignee / Owner
- Publication Date
- 2000-05-23
- Estimated Expiration
- Not applicable · inactive patent
Abstract
Description
The present invention relates to a photothermal conversion material which absorbs laser light to generate heat.Keeping abreast with the recent advances in laser technology, studies have been undertaken on methods for converting laser radiation to the thermal energy necessary for recording, for example an image forming method utilizing a laser thermal recording material or a laser thermal transfer printing material for high-speed, high-density, high-image-quality recording or reproduction. Moreover, against the background of the wide-spread use of computers and rapidly developing electronics inclusive of improvements in digital image processing technology, development of the so-called computer-to-plate (CTP) technology for direct fabrication of printing plates from digital data is in progress.In the technology comprising converting laser light to heat for image recording (laser thermal recording technology), a photothermal conversion material (light-to-heat converter) suited to the w...
Examples
example 1
A polyethylene terephthalate (PET) film with an average thickness of 5 .mu.m is coated with a solution containing 10 g of the binder Delpet 80N (acrylic resin, Asahi Chemical Industry) and 0.2 g of Compound No. 34 (Table 1) in 90 g of toluene-methyl ethyl ketone (1:1) using a wire bar in a dry film thickness of about 5 .mu.m to provide a sample.
A single-mode semiconductor laser (wavelength 830 nm) and optics were disposed so as to provide a condensed laser beam with a diameter of 10 .mu.m on the surface of said sample. The semiconductor laser was set so as to permit variation of the power of laser light reaching the surface over the range of 50.about.200 mW and the sample was irradiated with the single pulse at the pulse width of 20 .mu.s. After completion of the irradiation, the sample was examined under the light microscope. As a result, a through-hole with a diameter of about 10 .mu.m was formed when the power of laser light reaching the surface was 70 mW.
example 2
Except that 0.2 g of Compound No. 93 (Table 1) was used in lieu of Compound No. 34 (Table 1), the procedure of Example 1 was otherwise repeated. Examination of the irradiated sample under the light microscope revealed that a through-hole with a diameter of about 10 .mu.m was formed when the power of laser light reaching the surface was 80 mW.
example 3
A polyethylene terephthalate (PET) film having an average thickness of 5 .mu.m was coated with a solution containing 10 g of the binder Delpet 80N (acrylic resin, Asahi Chemical Industry) and 0.2 g of Compound No. 27 (Table 1) in 90 g of toluene-methyl ethyl ketone (1:1) using a wire bar in a dry film thickness of about 5 .mu.m to provide a sample.
A single-mode semiconductor laser (wavelength 790 nm) and optics were disposed so as to provide a condensed laser beam with a diameter of 10 .mu.m on the surface of said sample. The semiconductor laser was set so as to permit variation of the power of laser light reaching the surface over the range of 50.about.200 mW and the sample was irradiated with the single pulse at the pulse width of 20 .mu.s. After completion of the irradiation, the sample was examined under the light microscope. As a result, a through-hole with a diameter of about 10 .mu.m was formed when the power of laser light reaching the surface was 70 mW.