Semiconductor device and method for manufacturing semiconductor device
a semiconductor and semiconductor technology, applied in the direction of semiconductor devices, basic electric elements, electrical appliances, etc., can solve the problems of parasitic capacitance between, increase in resolution, etc., and achieve the effect of increasing the screen size of display devices, low manufacturing cost, and relatively simple manufacturing process
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embodiment 1
[0110]In this embodiment, examples of a semiconductor device including an oxide semiconductor film and a method for manufacturing the semiconductor device are described with reference to FIGS. 1A to 1C, FIGS. 2A to 2D, FIGS. 3A to 3D, FIGS. 4A to 4D, FIGS. 5A to 5C, FIGS. 6A to 6D, FIGS. 7A to 7D, FIGS. 8A to 8D, FIGS. 9A and 9B, FIGS. 10A and 10B, FIGS. 11A and 11B, FIGS. 12A and 12B, FIGS. 13A and 13B, FIGS. 14A and 14B, and FIGS. 15A and 15B.
[0111]An example of a semiconductor device including an oxide semiconductor film is illustrated in FIGS. 1A to 1C. As an example of the semiconductor device, a transistor is shown here. Note that the transistor in FIGS. 1A to 1C has a staggered (top-gate) structure.
[0112]FIG. 1A is a top view of a transistor 100. FIG. 1B is a cross-sectional view taken along dashed-dotted line X1-X2 in FIG. 1A. FIG. 1C is a cross-sectional view taken along dashed-dotted line Y1-Y2 in FIG. 1A. For clarity, FIG. 1A does not illustrate some components such as an...
embodiment 2
[0311]In this embodiment, examples of a semiconductor device including a silicon film and a method for manufacturing the semiconductor device are described with reference to FIGS. 16A to 16C, FIGS. 17A to 17D, FIGS. 18A to 18D, FIGS. 19A to 19D, FIGS. 20A to 20C, FIGS. 21A to 21C, and FIGS. 22A and 22B. Note that a structure in which n-channel low-temperature polycrystalline silicon (low-temperature polysilicon) is used for a silicon film is described as an example in this embodiment.
[0312]An example of a semiconductor device including an oxide semiconductor film is illustrated in FIGS. 16A to 16C. As an example of the semiconductor device, a transistor is shown here. Note that the transistor in FIGS. 16A to 16C has a staggered (top-gate) structure.
[0313]FIG. 16A is a top view of a transistor 200. FIG. 16B is a cross-sectional view taken along dashed-dotted line X1-X2 in FIG. 16A. FIG. 16C is a cross-sectional view taken along dashed-dotted line Y1-Y2 in FIG. 16A. For clarity, FIG. ...
embodiment 3
[0453]In this embodiment, the composition and structure of an oxide semiconductor that can be used in one embodiment of the present invention are described with reference to FIGS. 23A to 23C, FIG. 24, FIGS. 25A and 25B, FIGS. 26A to 26E, FIGS. 27A to 27E, FIGS. 28A to 28D, FIGS. 29A and 29B, and FIG. 30.
[0454]Composition of an oxide semiconductor is described below.
[0455]An oxide semiconductor preferably contains at least indium or zinc. In particular, indium and zinc are preferably contained. In addition, aluminum, gallium, yttrium, tin, or the like is preferably contained. Furthermore, one or more elements selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, or the like may be contained.
[0456]Here, the case where an oxide semiconductor contains indium, an element M, and zinc is considered. The element M is aluminum, gallium, yttrium, tin, or the like. Alternatively, the element...
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