An ESD protection device includes a zener diode, and a series circuit of diodes and a series circuit of diodes that are connected in parallel with the zener diode. At the connection point between the diodes, an Al electrode film is formed on the surface of a Si substrate, and at the connection point between diodes, an Al electrode film is formed on the surface of the Si substrate. The diodes are formed on the surface of the Si substrate, and the diodes are formed in the thickness direction of the Si substrate. The Si substrate has a longitudinal direction and a shorter direction orthogonal to the longitudinal direction in planar view, and the Al electrode films are formed respectively at both ends in the shorter direction of the Si substrate. Thus, provided is an ESD protection device which suppresses the ESL, and keeps the clamp voltage low.