Opposite target reaction magnetocontrol sputtering method for preparing vanadium oxide film

A technology of reactive magnetron sputtering and vanadium oxide thin film, which is applied in the direction of sputtering plating, ion implantation plating, metal material coating process, etc., which can solve the problem of low utilization rate of target material, increase of substrate temperature, high temperature and other problems, to achieve the effect of high target utilization, high sputtering rate and low substrate temperature

Inactive Publication Date: 2007-10-03
TIANJIN UNIV
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  • Abstract
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AI Technical Summary

Problems solved by technology

In the existing reactive sputtering process, in order to make the deposited vanadium oxide film have high TCR value and low room temperature resistance, it is not only necessary to precisely control the process parameters of the deposited film to form a vanadium oxide film of appropriate composition, but also to Afterwards, a long-term thermal annealing is carried out at high temperature, which not only increases the difficulty of the process, but also reduces the repeatability of the process
There is also a method for preparing vanadium oxide film by sputtering, which is to deposit metal vanadium film first, then form vanadium oxide film through oxidation diffusion and post annealing, such as CN 1392286A, although this method does not need to strictly control the reaction gas in the sputter coating process flow, but oxidation diffusion and post-annealing processes also require higher temperatures
In addition, when sputtering coating on a single target, the target utilization rate is low and the substrate temperature rises

Method used

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  • Opposite target reaction magnetocontrol sputtering method for preparing vanadium oxide film
  • Opposite target reaction magnetocontrol sputtering method for preparing vanadium oxide film
  • Opposite target reaction magnetocontrol sputtering method for preparing vanadium oxide film

Examples

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Effect test

Embodiment 1

[0016] Example 1 Prepare a vanadium oxide film with a high temperature coefficient of resistance on a glass substrate, and the specific steps are as follows:

[0017] 1) Cleaning the glass substrate, the process is as follows: ultrasonically clean with acetone, rinse with deionized water, then ultrasonically clean with ethanol, and then rinse with deionized water;

[0018] 2) Prepare a vanadium oxide thin film on the above glass substrate by using the reactive magnetron sputtering method against the target, open the vacuum chamber, put the glass substrate, first draw a low vacuum, then open the high valve, and draw a high vacuum to 3×10 -4 Below Pa, flow argon and oxygen with a flow volume ratio of 120:1 into the vacuum chamber to a working pressure of 2Pa, and sputter the film with a sputtering power of 240W, a substrate temperature of 25°C, and a sputtering time of 30 minutes. . ;

[0019] 3) The above-mentioned vanadium oxide film was tested for resistance temperature cha...

Embodiment 2

[0020] Embodiment 2 Prepare a vanadium oxide film with a high temperature coefficient of resistance on a silicon substrate, and the specific steps are as follows:

[0021] 1) The surface of the silicon wafer is cleaned to remove polluting organic matter, dust and metal ion impurities on the surface of the silicon wafer. The process is as follows: concentrated sulfuric acid (concentration is 98%) and hydrogen peroxide are mixed in a volume ratio of 3:1 to prepare a cleaning solution. Soak the silicon chip in this cleaning solution for 40 minutes, rinse the silicon chip with deionized water, then mix ammonia water, hydrogen peroxide and deionized water in a volume ratio of 1:40:50, soak the silicon chip for 30 minutes, and then wash it with deionized water rinse. A layer of silicon oxide film was first deposited on the silicon wafer by PECVD method, and the back vacuum was 4.5×10 -1 Pa, working pressure is 4.3Pa, substrate temperature is 150℃, working gas is N 2 O and SiH 4 ,...

Embodiment 3

[0025] This embodiment is similar to embodiment 2, except that the process parameters of step 2 are: the argon gas and oxygen gas with a flow volume ratio of 130:1 are passed into the vacuum chamber to a working pressure of 1.5Pa, the sputtering power is 195W, and the sputtering power is 195W. The irradiation time was 75 minutes, the substrate temperature was 200°C, and the resistance-temperature characteristic test was carried out on the vanadium oxide thin film. -2 K -1 .

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Abstract

A process for preparing the vanadium oxide film by magnetically controlled sputtering with the reaction between two opposite targets includes such steps as washing Si (or glass) substrate, depositing a silicon oxide film layer on the Si substrate by PECVD method, and magnetically controlled sputtering with two opposite targets to deposit vanadium oxide film. The technological condition for said sputtering is also disclosed. Said film features high electric resistance-temp coefficient and low electric resistance at ordinary temp.

Description

technical field [0001] The invention relates to a method for preparing a vanadium oxide thin film by reactive magnetron sputtering against a target, which belongs to the preparation technology of the vanadium oxide thin film. Background technique [0002] Since Morin discovered the phase transition properties of vanadium oxide films in 1959, research on vanadium oxide films has been ongoing. Vanadium dioxide thin film has the characteristics of phase transition from low-temperature semiconductor phase to high-temperature metal phase, accompanied by sudden changes in resistivity, magnetic susceptibility, light transmittance and reflectivity, so it has many applications in the fields of microelectronics and optoelectronics. Since vanadium is a polyvalent metal, it can combine with oxygen to form a variety of oxides, especially VO 2 Although the vanadium oxide-based mixed-phase polycrystalline film does not have temperature phase transition characteristics, it can reach -2×10 ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/54C23C14/02
Inventor 胡明吴淼张之圣刘志刚吕宇强
Owner TIANJIN UNIV
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