Ce-doped Eu-doped lutetium yttrium aluminium acid submicron image screen and its preparation method
A fluorescent screen, sub-micron technology, applied in the field of imaging fluorescent screens, can solve the problems of long light decay time, low coupling efficiency, reduced screen resolution, etc., and achieve the effect of high resolution and high X-ray absorption coefficient
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Embodiment 1
[0039] Example 1: Lu 0.9998 Ce 0.0001 Eu 0.0001 AlO 3 / YAlO 3 Fluorescent screen
[0040] The selected resistance heating liquid phase epitaxy furnace is as figure 1 In the shown device, the crucible 9 in the main body furnace 101 is a platinum crucible. According to the above-mentioned preparation process step , the polycrystalline raw material Lu 0.9998 Ce 0.0001 Eu 0.0001 AlO 3 With cosolvent (PbO: B2O3=10mol: 1mol) by weight percentage is Lu 0.9998 Ce 0.0001 Eu 0.0001 AlO 3 / (PbO+B2O3)=0.20 ratio to weigh a total of 1000g, mix well and put 80×80mm platinum crucible 9;
[0041] According to the process step , the size is 30×0.03mm, YAlO with crystal plane direction of (100) 3 The substrate 8 is placed in the fixture 7, and the fixture 7 is loaded into the bottom end of the rotating lifting rod 6, and the positions of the crucible 9 and the substrate wafer 8 are adjusted to be coaxial, and they are all located in the center of the main furnace body 101;
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Embodiment 2
[0046] Example 2: Lu 0.998 Ce 0.01 Eu 0.01 AlO 3 / LuAlO 3 flicker screen
[0047] Lu 0.998 Ce 0.01 Eu 0.01 AlO 3 Polycrystalline material and auxiliary solvent (Bi203: B203=8mol: 2mol) are Lu by weight percentage 0.998 Ce 0.01 Eu 0.01 AlO 3 / (Bi203+B203)=0.40 proportioning weighs a total of 1000g, according to the step in the above-mentioned embodiment 1, the size is φ20×0.03mm, the crystal plane direction is (001) LuAlO 3 The substrate 8 is placed in the fixture 7, and the fixture 7 is loaded into the bottom end of the rotating pull rod 6, and the positions of the crucible 9 and the substrate wafer 8 are adjusted to be coaxial, and they are all located in the center of the main furnace body 101; In Example 1, raise the temperature of the furnace body 101 to 1100°C, melt the raw materials and flux to form a saturated solution 10, and after keeping the temperature at 1100°C for 5 hours, gradually lower and rotate the lifting rod 6 according to in the above-mentio...
Embodiment 3
[0048] Example 3: Lu 0.99 Eu 0.05 Ce 0.05 AlO 3 / Lu 0.8 Y 0.2 AlO 3 flicker screen
[0049] Lu 0.99 Eu 0.05 Ce 0.05 AlO 3 Polycrystalline material and auxiliary solvent (Bi203: B203=8mol: 2mol) are Lu by weight percentage 0.99 Eu 0.05 Ce 0.05 AlO 3 The ratio of / (Bi203+B203)=0.50 weighs a total of 1000g, according to the step in the above-mentioned embodiment 2, the size is φ20×0.03mm, and the crystal plane direction is (100) Lu 0.8 Y 0.2 AlO 3 The substrate 8 is placed in the fixture 7, and the fixture 7 is loaded into the bottom end of the rotating pull rod 6, and the positions of the crucible 9 and the substrate wafer 8 are adjusted to be coaxial, and they are all located in the center of the main furnace body 101; In Example 2, raise the temperature of the furnace body 101 to 1150°C, melt the raw materials and flux to form a saturated solution 10, and after keeping the temperature at 1150°C for 5 hours, gradually lower and rotate the lifting rod 6 accordi...
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