Organic electroluminescent element
An electroluminescence device and electroluminescence technology, which are applied in the directions of electroluminescence light source, electric solid state device, electric light source, etc., can solve the problem that the light emitting device cannot be bent, etc., and achieve the effect of a simple preparation method
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preparation example Construction
[0016] (2) Preparation of the organic light-emitting layer: the above-mentioned cleaned and dried ITO glass that has been pretreated is placed in a vacuum chamber, and the vacuum is evacuated to 1×10 -5 ~9×10 -3 Pa, and then evaporate a layer of hole transport material on the above ITO film, the evaporation rate of the material film is 0.01-0.5nm / s, and the film thickness is 20-80nm; Material, the evaporation rate of the material film is 0.01-0.5nm / s, and the film thickness is 20-80nm; a layer of electron transport material is evaporated on the organic light-emitting material, and the evaporation rate of the material film is 0.01-0.5nm / s, The film thickness is 20-80nm;
[0017] (3) Preparation of the cathode: keeping the pressure in the above-mentioned vacuum chamber constant, an alloy layer is sequentially evaporated on the above-mentioned electron transport layer as the cathode layer of the device, with a film thickness of 2-20 nm. The alloy layer is doped by dual-source e...
Embodiment 1
[0021] The structure of embodiment 1 is as follows:
[0022] Glass substrate / ITO / NPB / Alq / Mg:Ag / PI / stainless steel foil with titanium nitride layer
[0023] (1) Cleaning of glass substrates pre-engraved with ITO: use hot detergent ultrasonic and deionized water ultrasonic methods to clean the transparent conductive substrate ITO glass, place it under an infrared lamp to dry after cleaning, and then The dried ITO glass is pretreated by ultraviolet ozone cleaning and low-energy oxygen ion beam bombardment. The ITO film on the conductive substrate is used as the anode layer of the device. The square resistance of the ITO film is 50Ω and the film thickness is 150nm;
[0024] (2) Preparation of the organic light-emitting layer: the above-mentioned cleaned and dried ITO glass that has been pretreated is placed in a vacuum chamber, and the vacuum is evacuated to 1×10 -3 Pa, and then evaporate a layer of hole transport material NPB on the above-mentioned ITO film, the evaporation rate...
Embodiment 2
[0031] The structure of embodiment 2 is as follows:
[0032] Glass substrate / ITO / NPB / Alq / Mg:Ag / PI / Mg / UV curable adhesive / stainless steel foil with titanium nitride layer
[0033] (1) The cleaning of the glass substrate that is engraved with ITO in advance: refer to the corresponding process of embodiment 1;
[0034] (2) Preparation of organic light-emitting layer: refer to the corresponding process of Example 1;
[0035] (3) Preparation of cathode: the corresponding process of reference example 1;
[0036](4) Preparation of the passivation protection layer: keep the pressure in the above-mentioned vacuum chamber constant, and vapor-deposit the polymer material PI on the metal cathode layer with a thickness of 500 nm. Metal Mg was evaporated on the PI film layer with a thickness of 200nm; after that, the device was transferred to a glove box filled with nitrogen, and a UV-curable adhesive film was prepared on the metal layer by flinging the film, and cured by UV light. Thick...
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