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Method for producing air bridge of compound semiconductor microwave high power device

A technology of high-power devices and manufacturing methods, applied in the field of microelectronics, can solve the problems of small protrusion of vertical vertical plane, increase of photoresist thickness, lateral shrinkage of photoresist, etc., to achieve reduced difficulty, large arched arc, The effect of ensuring reliability

Inactive Publication Date: 2009-03-11
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the glue is baked at high temperature to make the edge of the compound glue smooth, there will be a serious problem of lateral shrinkage of the photoresist, making the span of the air bridge far smaller than the layout design parameters.
At the same time, due to the small protrusion of the longitudinal vertical surface, the thickness of the photoresist must be increased when making an air bridge with a high bridge deck, which adds a certain degree of difficulty to photolithography.

Method used

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  • Method for producing air bridge of compound semiconductor microwave high power device
  • Method for producing air bridge of compound semiconductor microwave high power device
  • Method for producing air bridge of compound semiconductor microwave high power device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] The substrate material chooses Si wafer as the substrate

[0058] In step 1, two kinds of adhesives are respectively coated on the Si substrate, and a bridge region and an electrode region are photoetched to form a sacrificial layer.

[0059] First, coat a layer of 1.5 μm thick peeling adhesive LOR5A on the Si substrate, bake in an oven at a temperature of 160°C for 20 minutes; then coat a layer of 1.5 μm thick photoresist EPI622, and bake at a temperature of 85°C for 10 minutes. The ratio of the stripping glue LOR5A to the photoresist EPI622 is 5:5; then use the first photolithography plate for making the air bridge to lithographically print out the bridge area 6 and the bridge pier on both sides of the bridge area, that is, the area 3 of the electrode, and finally in the developer solution Soak for 2 minutes and blow dry with nitrogen to form a 3 μm sacrificial layer in the bridge area 6, that is, retain a 3 μm thick stripping glue and photoresist in the bridge area 6...

Embodiment 2

[0078] The invention manufactures the air bridge device structure on the microwave high-power GaN HEMT substrate based on the source, drain contact and Schottky contact, that is, the air bridge device structure on the microwave high-power gallium nitride high electron mobility transistor substrate .

[0079] In step 1, two kinds of adhesives are respectively coated on the GaN substrate, and the bridge region and the electrode region are photoetched to form a sacrificial layer.

[0080] First, coat a layer of 1.5 μm thick peeling adhesive LOR5A on the GaN substrate, and bake it in an oven at 160°C for 20 minutes; then coat a layer of 2.0 μm thick photoresist EPI622, and bake it at 85°C for 10 minutes. The ratio of the stripping glue LOR5A to the photoresist EPI622 is 3:4;

[0081] Then use the first photolithography plate for making the air bridge to lithographically cut out the bridge area 6 and the bridge piers on both sides of the bridge area, that is, the area 3 of the ele...

Embodiment 3

[0101] The substrate material is GaN as the substrate.

[0102] In step 1, two kinds of adhesives are respectively coated on the GaN substrate, and the bridge region and the electrode region are photoetched to form a sacrificial layer.

[0103] First, coat a layer of 1.0 μm thick peeling adhesive LOR5A on the GaN substrate, and bake it in an oven at a temperature of 160°C for 20 minutes; then coat a layer of 1.5 μm thick photoresist EPI622, and bake it at a temperature of 85°C for 10 minutes. The thickness ratio of the stripping glue LOR5A and the photoresist EPI622 is 2:3; then use the first photolithography plate for making the air bridge to lithography the bridge area 6 and the bridge pier on both sides of the bridge area, that is, the area 3 of the electrode, and finally in the developer solution Immerse in the medium for 2min, and blow dry with nitrogen to form a 2.5μm sacrificial layer in the bridge area 6, such as figure 1 shown.

[0104] Step 2, low-temperature baki...

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Abstract

The invention discloses an air bridge production method of compound semi-conductive microwave large powder device, mainly for resolving the problems of prior art which air bridge has low arch height, narrow width, and low reliability. And the production comprises that respectively coating remove adhesive and photo-etching adhesive with different pre-bake temperatures on a substrate, and etching a bridge area and an electrode area, to form a sacrificial layer, then baking the substrate at 135-145Deg. C for 15-25min, to form the sacrificial layer into arch structure, depositing a plating start layer at 80-100nm on the sacrificial layer, coating a photo-etching adhesive on the plating start layer, etching a bridge area and an electrode area, then in non-cyanide plating liquid, using plating method, to plate an Au layer on the etched bridge area and electrode area, at least, removing the mask photo-etching adhesive, removing Au and Ti of the plating start layer, removing the sacrificial layer, to obtain an arch air bridge. The invention has the advantages with high arch height, wide width, and high reliability.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and relates to a manufacturing process of a compound semiconductor microwave high-power device, in particular to an air bridge manufacturing method in a compound semiconductor microwave high-power device. Background technique [0002] The third-generation wide-bandgap semiconductors represented by silicon carbide SiC and gallium nitride GaN have large bandgap width, high critical field strength, high thermal conductivity, high carrier saturation rate, and two-dimensional electron gas concentration at the heterojunction interface. Its high-level and excellent characteristics make it attract people's attention. In theory, metal Schottky field effect transistor MESFET, high electron mobility transistor HEMT, heterojunction bipolar transistor HBT and other devices made of these materials have incomparable excellent performance in terms of high microwave power. Especially since the 1990s, du...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/768
Inventor 郝跃林若兵冯倩王冲
Owner XIDIAN UNIV