Tungsten oxide material with nano band array structure and preparing method thereof

Abstract

The invention relates a tungsten oxide material with nano-strip array structure and the preparing method thereof in the nanometer technical field, characterized in that: it is of a highly ordered nano-strip structure, a single tungsten oxide nano-strip is 0.5-5 mum long, 100-400 nm wide and 10-50 nm thick; the nano-strips directly grow, parallel and vertical with metal tungsten matrix. And the preparing steps comprise: using metal tungsten wire or plate as reacting matrix whose two ends are connected with anode and cathode of a heating power supply, respectively, placing the matrix in a closed reaction chamber; vacuumizing to 3000-5000Pa, switching the heating power supply, controlling the matrix temperature at 500-1100 deg.C,reacting for 5-30 min and switching off the power supply; and keeping constant vacuum and naturally cooling to room temperature. And its advantages: it is bonded firmly with the matrix; the specific surface area of the array is large, and the nanometer size effect is remarkable; the preparing course is one-step completed.

Description

technical field [0001] The invention relates to a tungsten oxide material with a nanobelt array structure grown on a metal tungsten substrate and a preparation method thereof, belonging to the technical field of nanometer materials. Background technique [0002] Tungsten oxide material is a new type of functional material, which can be used in chemical sensors, catalytic materials, electrochemical electrodes, electrochromic materials, high temperature superconducting materials, solar energy absorbing materials, wave absorbing invisible materials, etc. Since the preparation technology of tungsten oxide semiconductor films or nanoparticles is mature, and the preparation methods (such as sol-gel method, hydrothermal method, precipitation method, vapor deposition method, etc.) are relatively simple, most tungsten oxide materials are limited to thin films and Nanoparticles. However, the structure-size effect and high surface area of ​​nanostructure materials have aroused people'...

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Problems solved by technology

But there are still disadvantages: it is impossible to obtain an ordered nanostructure of the array; without a matrix as a support, the dispersed nano-column powder limits its specific application; (2) Christian Klinke et al. J.Phys.Chem.B.2005, 10, 17787-17790 published the article "Growing Tungsten oxide nanowire growth by chemically induced strain" (Tungsten oxide nanowire growth by chemically induced strain). When the background vacuum of the reaction chamber is evacuated to 1 Torr, argon and hydrogen are introduced and rapidly heated to 900°C. Under the condition of controlling this temperature, hydrogen and methane are introduced into the reaction gas to react for 30 minutes, and finally cooled to room temperature under the protection of argon to obtain Tungsten Oxide Nanowires

Existing shortcoming: can't obtain the nanostructure of array order; Reaction gases such as exogenous hydrogen, methane and argon are needed in the preparation process; (3) Yoshitaka Shingaya et al. : 647-649 in the article "Epitaxial growth of WOx nanorod array on W(001)" (Epitaxial growth of WOx nanorod array on W(001)), the technical scheme is: using chemical vapor deposition method, In ultra-high background vacuum (1×10 -10 torr) in the reactor, the metal tungsten belt that has been annealed at high temperature in ultra-high vacuum for many times is used as the substrate, at 1×10 -5 In the oxygen of torr, with the electric heating metal tungsten wire as the heat source, an array of tungsten oxide nanorods with a diameter of about 20nm and a length of about 1000nm is deposited on the substrate

Existing disadvantages: this method requires ultra-high background vacuum (1×10 -10 torr) reactor, the equipment requirements are harsh; at the same time, the pre-treatment process of the substrate for multiple ultra-high vacuum high temperature annealing is cumbersome

In addition, the tungsten oxide nanorods with a diameter of about 20nm and a length of about 1000nm formed by deposition of exogenous substances on the substrate have a limited specific surface area, and the combination of tungsten oxide and the substrate is not firm, which will limit its specific application as a tungsten oxide nanomaterial

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