Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar energy silicon crystal chip scavenger

A silicon wafer and cleaning agent technology, applied in the field of cleaning agents, can solve problems such as poor biodegradability, unfavorable environmental protection requirements, environmental pollution, etc., achieve good biodegradability, promote emulsification and dispersion performance, and promote mutual solubility. effect

Active Publication Date: 2007-08-22
CHANGZHOU JUNHE TECH
View PDF1 Cites 24 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, traditional alcohol ether and phenol ether surfactants are still used in this cleaning agent and sodium ethylenediamine tetraacetate complexing agent is used. The biodegradability of this type of surfactant and complexing agent is poor, which is not conducive to the current environmental protection requirements.
The main agent of this especially this kind of cleaning also adopts fluoride, and fluoride is a poisonous and harmful substance, which will pollute the environment.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] Solar silicon wafer cleaning agent of the present invention, its component is as follows by weight percentage:

[0016] Sodium nitrilotriacetate complexing agent 10% to 30%;

[0017] C 10 -C 13 Carbonyl isomer alcohol ethoxylate surfactant 5%~10%;

[0018] Fatty alcohol alkoxy compound surfactant 3% to 5%;

[0019] Acrylic acid copolymer sodium salt additive 0.05% to 0.15%;

[0020] Hydrogen peroxide oxidizing agent 0.5%~2%;

[0021] Ethylene glycol butyl ether organic solvent 5% to 10%;

[0022] Potassium hydroxide 1% to 5%;

[0023] Deionized water balance.

[0024] The above components are all commercially available products, and the components are mixed and dissolved according to the above ratio to form a cleaning agent with uniform concentration. When in use, put the solution prepared by cleaning agent and water in a ratio of 1:50 to 100 into the ultrasonic cleaning tank, and control the temperature of the cleaning solution at 50±5°C to clean the silicon wa...

Embodiment 2

[0026] Solar silicon wafer cleaning agent of the present invention, its component is as follows by weight percentage:

[0027] Sodium nitrilotriacetate complexing agent 15% to 25%;

[0028] C 10 -C 13 Carbonyl isomer alcohol ethoxylate surfactant 6%~8%;

[0029] Fatty alcohol alkoxy compound surfactant 3% to 5%;

[0030] Acrylic acid copolymer sodium salt additive 0.05% to 0.15%;

[0031] Hydrogen peroxide oxidizing agent 0.5%~2%;

[0032] Ethylene glycol butyl ether organic solvent 5% to 10%;

[0033] Potassium hydroxide 2% to 3%;

[0034] Tap water surplus.

[0035] Mix and dissolve the components according to the above ratio to form a cleaning agent with uniform concentration. When in use, put the solution prepared by cleaning agent and water in a ratio of 1:50 to 100 into the ultrasonic cleaning tank, and control the temperature of the cleaning solution at 50±5°C to clean the silicon wafer, and the silicon wafer after cleaning and drying has no grease , impurities...

Embodiment 3

[0037] Solar silicon wafer cleaning agent of the present invention, its component is as follows by weight percentage:

[0038] Sodium nitrilotriacetate complexing agent 20% to 25%;

[0039] C10-C13 Carbonyl Isomerized Alcohol Ethoxylate Surfactant 6%~8%;

[0040] Fatty alcohol alkoxy compound surfactant 3% to 5%;

[0041] Acrylic acid copolymer sodium salt additive 0.05% to 0.15%;

[0042] Hydrogen peroxide oxidizing agent 0.5%~2%;

[0043] Ethylene glycol butyl ether organic solvent 5% to 10%;

[0044] Potassium hydroxide 2% to 4%;

[0045] Tap water surplus.

[0046] Mix and dissolve each combination according to the above ratio to form a cleaning agent with uniform concentration. When in use, put the solution prepared by cleaning agent and water in a ratio of 1:50 to 100 into the ultrasonic cleaning tank, and control the temperature of the cleaning solution at 50±5°C to clean the silicon wafer, and the silicon wafer after cleaning and drying has no grease , impuritie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The solar energy silicon crystal chip scavenger is compounded with sodium triacetate complex 10-30 wt%, C10-C13 carbonyl ethoxyl compound surfactant 5-10 wt%, fatty alcohol alkoxyl surfactant 3-5 wt%, sodium salt of acylate copolymer 0.05-0.15 wt%, hydrogen peroxide as oxidant 0.5-2 wt%, butyl glycol ether as organic solvent 5-10 wt%, potassium hydroxide 1-5 wt%, and water for the rest. It contains no toxic, harmful and pollutant matter, and has high detergency, biodegradability and environment friendship.

Description

technical field [0001] The invention relates to a cleaning agent, in particular to a cleaning agent for solar silicon wafers. Background technique [0002] Silicon wafer has good photoelectric effect and is the main material of solar cells. However, during its processing, some organic matter and metal impurities often adhere to the surface of the silicon wafer to affect its working performance and reduce the conversion efficiency of solar energy, so the surface of the silicon wafer must be kept clean. Traditional cleaning agents used for silicon wafers use strong corrosive chemical reagents such as strong acids or strong alkalis. Such chemical cleaning agents have problems such as many cleaning procedures, cumbersome post-processing, large environmental pollution, and high cost. After alkali reaction, it is easy to form over-corrosion on the surface, causing the surface of the silicon wafer to turn black, and the chemicals remaining on the surface of the silicon wafer durin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C11D1/68C11D3/37H01L21/304C11D3/20C11D3/02
Inventor 吴伟峰
Owner CHANGZHOU JUNHE TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com