Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

N-type underlay single-side extraction electrode crystal silicon cell and its making method

A technology for crystalline silicon cells and lead-out electrodes, which is applied in final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of complex process and high cost, and achieve the effects of high efficiency, simple manufacturing method and high cost performance.

Inactive Publication Date: 2007-11-28
HANWHA SOLARONE QIDONG
View PDF0 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But their common problem is that the process is more complicated, and compared with conventional N-type solar cells, the cost is still too high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • N-type underlay single-side extraction electrode crystal silicon cell and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] A method for manufacturing a crystalline silicon battery with electrodes drawn from one side of an N-type substrate, comprising the following steps in sequence:

[0033] (1) Select an N-type single crystal silicon wafer with a resistance of 0.5-6Ω·cm (for example, 0.5Ω·cm, 3Ω·cm, 6Ω·cm), and use a temperature of 50-85°C (for example, 50°C, 70°C, 85°C ℃) of 10-20% (eg 10%, 15%, 20%) concentration of sodium hydroxide solution to remove the damaged layer on each side; then use 1.5-2 % (Example 1.5%, 1.8%, 2%) concentration of sodium hydroxide solution and 1 ~ 3% (Example 1%, 2%, 3%) concentration of isopropanol and 1 ~ 3% (Example 1%, 2%, 3%) concentration corrosion inhibitor sodium silicate is corroded, and corrosion time is 20~40 minutes (example 20 minutes, 30 minutes, 40 minutes), neutralizes and cleans then, forms suede structure;

[0034] (2)N + Layer diffusion: the silicon wafer treated in step (1) is heated with POCl 3 As a diffusion source, phosphorus is diffus...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistanceaaaaaaaaaa
Deposition thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an N type underlay single leading electrode crystalline silicon battery and preparing method. The product is equipped with N+ diffuse layer, the suede surface structure, the silicon nitride film layer from the interior to the exterior on the front of the N type underlay and N+ diffuse layer on the back of the N type underlay, the N+ diffuse layer exterior of the N type underlay back is equipped with sio2 layer, the intermediate between sio2 layer and the N type underlay is equipped with p+ diffuse layer, the exterior of sio2 layer is equipped with the positive electrode and the negative electrode, the positive electrode contracts the P+ diffuse layer by the contract hole in the sio2 layer, the positive electrode contracts the N+ diffuse layer by the contract hole in the sio2 layer. The preparing method comprises the following steps: selecting the material; forming the suede surface; diffusing N+ layer; forming the passive marked sio2 layer; etching; diffusing boron; making hole on the lasing back area; removing sio2 layer on the front of silicon chip; depositing the silicon nitride film; printing positive electrode and negative electrode. The product is provided with the rational structure, the high-effective ratio, the simple process and the simple operation.

Description

Technical field: [0001] The invention relates to a crystalline silicon battery and a manufacturing method. Background technique: [0002] Energy and environment are two basic issues facing mankind in the 21st century. The development of pollution-free and renewable new energy is the only way to solve these two problems. Signed in 1997 and the "Kyoto Protocol" requires countries around the world to change the way of energy utilization, gradually transform from coal and oil to renewable energy, reduce greenhouse gas emissions, and completely change the contradiction between the development of human society and energy shortages and environmental pollution. [0003] Solar cells can convert solar energy into electrical energy, provide electricity without producing any harmful substances, and have the characteristics of simple system and convenient maintenance. At present, there are still 60 million people without electricity in my country, mainly distributed in areas where conv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/042H01L31/036H01L31/0224H01L31/18
CPCY02E10/50Y02P70/50
Inventor 陈坤王玉亭袁永健刘长柱王汉飞
Owner HANWHA SOLARONE QIDONG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com