Main body film forming resin for photoresist and its preparation method and uses

A film-forming resin and photoresist technology, which is applied to the main film-forming resin for photoresist and its preparation and application fields, can solve the problems of low glass transition temperature, insufficient heat resistance and the like, and achieves high resolution, Good adhesion and no deformation

Inactive Publication Date: 2008-03-26
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] In order to overcome the shortcomings of low glass transition temperature and insufficient heat resistance of the photoresist main ...

Method used

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  • Main body film forming resin for photoresist and its preparation method and uses
  • Main body film forming resin for photoresist and its preparation method and uses
  • Main body film forming resin for photoresist and its preparation method and uses

Examples

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Effect test

example 1

[0027] Example 1: Dissolve monomer N-phenylmethacrylamide and monomer N-phenylmaleimide in dioxane (W / W: 1 / 10) at a molar ratio of 1:1, Make a homogeneous solution, add 1% AIBN of the total weight of monomers as a free radical polymerization initiator, vacuumize to remove oxygen, and protect it with nitrogen, at a constant temperature of 65 ° C, statically polymerize for 24 hours, and then slowly pour it into the precipitant ether , precipitated polymer precipitate, suction filtration, vacuum drying to obtain a crude product. The crude product was redissolved in dioxane (W / W: 1 / 10), and then slowly poured into diethyl ether (9 times the volume of dioxane used), precipitated, suction filtered, 65°C Vacuum drying was repeated three times to obtain a purified copolymer resin.

[0028] After the copolymer resin is compounded with diazonaphthoquinone sulfonyl chloride, benzophenone and cyclohexanone in proportion (W / W, 5:1.6:2:100), it can be filtered through an ultrafiltration me...

example 2

[0029] Example 2: The monomer N-(p-acetoxyphenyl) methacrylamide and the monomer N-(p-hydroxyphenyl) maleimide are dissolved in DMSO (W / W: 1 / 13), make a homogeneous solution, add 10% of the total weight of the monomer BPO as a free radical polymerization initiator, vacuumize and remove oxygen, and protect with nitrogen, and stir and polymerize for 48 hours at a constant temperature of 70°C , and then slowly poured into precipitant water, precipitated polymer precipitate, suction filtration, vacuum drying to obtain crude product. The crude product was re-dissolved in DMSO (W / W: 1 / 13), then slowly poured into water (5 times the volume of DMSO), filtered with suction, vacuum-dried at 65°C, and repeated three times to obtain a purified copolymer resin.

[0030] After compounding the copolymer resin with diazonaphthoquinone sulfonyl chloride, benzophenone and ethylene glycol monoethyl ether in proportion (W / W, 20:8:5:100), it can be filtered through ultrafiltration membrane Make...

example 3

[0031] Example 3: The monomer N-(p-acetoxyphenyl) methacrylamide and the monomer N-(p-hydroxyphenyl) maleimide are dissolved in DMF (W / W: 1 / 15) to make a homogeneous solution, add 19% of the total weight of the monomer BPO as a free radical polymerization initiator, vacuumize and remove oxygen, and protect with nitrogen, and stir and polymerize for 72 hours at a constant temperature of 75°C , and then slowly poured into precipitant water, precipitated polymer precipitate, suction filtration, vacuum drying to obtain crude product. The crude product was redissolved in DMF (W / W: 1 / 15), then slowly poured into water (1 times the volume of DMSO), filtered with suction, dried in vacuum at 65°C, and repeated three times to obtain a purified copolymer resin.

[0032] After compounding the copolymer resin with diazonaphthoquinone sulfonyl chloride, benzophenone and ethylene glycol monoethyl ether in proportion (W / W, 40:12:8:100), it can be filtered through ultrafiltration membrane M...

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Abstract

There is a sort of principal phragmoid colophony that it is used for the light-sensitive lacquer, and its manufacturing method is that 1. Make the monomer N-substitution methyl radical acrylamide and the monomer N-substitution maleimide to be dissolved to the solvent in order to execute the homogeneous liquor. 2. Affiliate the free-radical polymerization initiator in this liquor, and aggregate them in the definite temperature, and then drop it to the precipitator in order to separate out the polymer deposition, at last filtrate it, and then get the coarse production. 3. Dissolve this coarse production in the solvent anew, and then drop it to the precipitator in order to deposition, at last filtrate it, and then get the copolymer colophony of this invention. Its applied method is that: Dissolve the copolymer colophony and the sensitizer and the additive and the solvent, and filtrate it by the hyper-filtration membrane, at last get the light-sensitive lacquer of this invention. This light-sensitive lacquer has the character in that the high resolution factor, the good adhesive power with the bulk material, and the strong anti-dry-etching ability. In addition it has the good high-temperature capability.

Description

technical field [0001] A main film-forming resin used for photoresist and its preparation method and application, especially in the microelectronics manufacturing process, the main film-forming resin N-substituted methacrylamide and N- Copolymer of substituted maleimide and its preparation method and application. Background technique [0002] Photoresist, also known as photoresist, refers to a corrosion-resistant film material whose solubility changes through irradiation or irradiation of ultraviolet light, electron beams, particle beams, x-rays, etc. Photoresist is the key basic material to complete the photolithography process of microelectronics manufacturing, and it determines the development level of microelectronics technology. Photoresists are usually composed of film-forming resins, photosensitizers, solvents and some additives. The two most important properties of photoresists are sensitivity and resolution. In addition, the photoresist's ability to resist dry etch...

Claims

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Application Information

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IPC IPC(8): G03F7/004G03F7/027G03F7/033
Inventor 李平刘建国刘和平
Owner HUAZHONG UNIV OF SCI & TECH
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