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A method for making GaN base laser tube core

A gallium nitride-based, laser technology, used in lasers, laser parts, semiconductor lasers, etc., can solve the problems of difficult lasers, uneven operating current injection, and difficulty in realizing laser fundamental mode operation, and achieve uniform injection and easy operation. effect made

Inactive Publication Date: 2008-03-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, this method of manufacturing gallium nitride-based laser dies makes the injection of the laser operating current uneven, making it difficult to manufacture lasers with narrow ridge widths, and at the same time it is difficult to achieve fundamental mode operation of the laser

Method used

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  • A method for making GaN base laser tube core
  • A method for making GaN base laser tube core
  • A method for making GaN base laser tube core

Examples

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Embodiment 1

[0051] As shown in FIG. 2 , FIG. 2 is a schematic cross-sectional view of a gallium nitride-based laser epitaxial structure manufactured according to an embodiment of the present invention. Specific methods for fabricating GaN-based laser epitaxial structures include:

[0052] GaNN-type electrode contact layer 11, N-type AlGaN optical confinement layer 12, N-type GaN waveguide layer 13, light-emitting active region 14, P-type GaN waveguide layer 15, P-type AlGaN optical confinement layer 16 and P-type GaN electrode contact layer 17 .

[0053]As shown in FIG. 3 , FIG. 3 is a schematic diagram of vapor-depositing a P-type layer ohmic contact electrode on a GaN-based laser structure according to an embodiment of the present invention. Evaporate a metal layer on the surface of the epitaxial structure of the manufactured laser, and alloy in a nitrogen atmosphere or a mixed atmosphere of nitrogen and oxygen at 450 to 650 ° C for 1 to 15 minutes to form a good ohmic contact electrod...

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Abstract

This invention discloses a method for processing die of a GaN laser including: A, plating an ohmic contact electrode of type-P on the surface of a laser epitaxial structure, b, taking a dielectric film or photoetching glue as the mask to etch a contact region of type-N of a laser on the epitixial structure plated with type-P ohmic contact electrode, C, taking photoetch glue as the mask to etch a ridge structure of the laser, D, plating or depositing dielectric membrane isolation layer on the laser etched with the ridge structure, F, applying a peel-off method to expose type-P ohmic contact electrode, F, applying a method of photoetch and plating metal electrodes to form a thicked electrode of type -P and ohmic contact electrode of type-N.

Description

technical field [0001] The invention relates to the technical field of manufacturing laser dies in semiconductor technology, in particular to a method for manufacturing gallium nitride-based laser dies. Background technique [0002] III-V GaN-based compound semiconductors and their quantum well structure lasers (LDs) have broad application prospects in the fields of increasing the optical storage density of information, laser printing, deep-sea communication, and atmospheric environment detection. [0003] If the GaN-based laser replaces the current DVD optical head, its recording density can reach 2-3 times the current one; if the printer uses GaN-based laser, its resolution can be increased from the current standard 600dpi to 1200dpi. [0004] The deep sea has a window in the blue light range. GaN-based lasers can be used for deep sea detection and communication, and have far-reaching significance in the field of national defense. In addition, blue lasers can also be used...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/00H01S5/22H01S5/343
Inventor 张书明种明朱建军杨辉
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI