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Polysilicon thin film transistor and method of fabricating the same

A technology of polysilicon thin film and amorphous silicon thin film, applied in the direction of transistor, semiconductor/solid-state device manufacturing, manufacturing tools, etc., can solve the problem that CW laser is not suitable for mass production

Inactive Publication Date: 2008-04-16
SAMSUNG MOBILE DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, CW lasers are not suitable for mass production

Method used

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  • Polysilicon thin film transistor and method of fabricating the same
  • Polysilicon thin film transistor and method of fabricating the same
  • Polysilicon thin film transistor and method of fabricating the same

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Embodiment Construction

[0040] Hereinafter, a method of manufacturing a polysilicon panel for a thin film transistor according to an embodiment will be described in detail with reference to the accompanying drawings.

[0041] In this method, an amorphous silicon thin film deposited on a panel is converted into a polysilicon thin film by scanning a combined laser beam comprising a wavelength range of about 600 nm to about 900 nm (specifically, in the red visible light range and near-infrared range) and pulsed laser beams having a wavelength range of about 100 nm to about 550 nm, specifically, between the visible range and the ultraviolet range. A continuous wave (CW) oscillating laser beam may have a wavelength of about 600nm, 610nm, 620nm, 630nm, 640nm, 650nm, 660nm, 670nm, 680nm, 690nm, 700nm, 710nm, 720nm, 730nm, 740nm, 750nm, 760nm, 770nm, 780nm, 790nm , 800nm, 810nm, 820nm, 830nm, 840nm, 850nm, 860nm, 870nm, 880nm, 890nm, 900nm wavelength or a range including two or more of any of the above value...

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Abstract

A method of fabricating a polycrystalline silicon thin film transistor is disclosed. One embodiment of the method includes: forming an amorphous silicon layer on a panel; scanning a continuous wave laser beam having a wavelength range of about 600 to about 900 nm between a visible light range of a red color and a near infrared range onto the amorphous silicon layer to preheat the amorphous silicon layer; overlappingly scanning a pulse laser beam having a wavelength range of about 100 to about 550 nm between a visible light range and an ultraviolet range in addition to the continuous wave laser beam on the panel to melt the preheated amorphous silicon layer; and stopping scanning the pulse laser beam to crystallize the molten silicon layer.

Description

technical field [0001] The present disclosure relates to a method of manufacturing a polysilicon thin film transistor, and more particularly, to a method of manufacturing a thin film transistor in which laser beams are combined by overlapping scanning to transform an amorphous silicon thin film into a polysilicon thin film. Background technique [0002] Flat panel display devices such as active matrix liquid crystal displays, electron emission display devices, and organic light emitting displays use thin film transistors (TFTs) to drive pixels. Most TFTs include a channel formed of silicon. Polycrystalline silicon has higher field effect mobility than amorphous silicon. Therefore, it is possible to drive a flat panel display device with polycrystalline silicon at high speed. [0003] The faceplate of the device may be formed from amorphous silicon, quartz, glass or plastic. Glass panels are widely used due to certain advantages such as high transparency, low cost, and hig...

Claims

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Application Information

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IPC IPC(8): H01L21/20H01L21/268H01L21/336B23K26/00H01L29/786
CPCB23K26/0613H01L27/1214H01L21/02683H01L21/02691H01L21/02686H01L21/02678H01L27/1285
Inventor 韩圭完柳相吉金亨植沃若诺夫·亚历山大卢喆来
Owner SAMSUNG MOBILE DISPLAY CO LTD