Method of producing zinc oxide Fe-doped rare magnetic semiconductor material

A dilute magnetic semiconductor and zinc oxide technology, which is applied in semiconductor/solid-state device manufacturing, zinc oxide/zinc hydroxide, magnetic film to substrate application, etc., can solve the problem of low solubility limit, difficult realization of ferromagnetism, and low magnetic performance and other issues to achieve the effect of low cost and simple technology

Inactive Publication Date: 2008-05-21
ZHEJIANG UNIV +1
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  • Abstract
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Problems solved by technology

MarcelH.F.Sluiter et al. deduced that Mn, Fe or Co doped dilute magnetic semiconductors are difficult to realize through the model based on the first theoretical calculation, especially when the concentration of Mn and Fe is higher than 8%, the nearest neighbor mutual Exchange interactions will intervene and become correlated, making ferromagnetism difficult to achieve and possible spin-glass states
[0006] In ex

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  • Method of producing zinc oxide Fe-doped rare magnetic semiconductor material

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Embodiment 1

[0025] Example 1: Preparation of ferromagnetic Zn at room temperature 0.99 Fe 0.01 O dilute magnetic semiconductor powder

[0026] 1) Zinc acetate (5.43g) and ferrous acetate (0.06g) with a molar percentage of 99:1 were dissolved in 25ml of ethylene glycol methyl ether, and 0.5ml of ethanolamine was added, and 0.4ml of ferrous acetate was added to the ferrous acetate solution. g of ascorbic acid, made into a solution with a concentration of 0.5mol / L, stirred at room temperature until fully dissolved, then slowly added the ferrous acetate solution into the zinc acetate solution, continued to stir for 12 hours, and left to age for 24 hours to obtain Transparent and uniform sol;

[0027] 2) Place the sol in a vacuum drying oven at 100°C for 12 hours to obtain a gel;

[0028] 3) The gel was heat-treated for 3 hours in an Ar gas environment at 300 ° C, and cooled with the furnace to obtain the desired room temperature ferromagnetic Zn 0.99 Fe 0.01 O dilute magnetic semiconduct...

Embodiment 2

[0029] Example 2: Preparation of ferromagnetic Zn at room temperature 0.95 Fe 0.05 O dilute magnetic semiconductor powder

[0030] 1) Zinc acetate (5.21g) and ferrous acetate (0.3g) with a molar percentage of 95:5 were dissolved in 25ml of ethylene glycol methyl ether, respectively, and 0.5ml of ethanolamine was added, and 1.8ml was added to the ferrous acetate solution. g ascorbic acid, stirred at room temperature until fully dissolved, then slowly added the ferrous acetate solution into the zinc acetate solution, continued to stir for 15 hours, then left to age for 36 hours to obtain a transparent, uniform sol;

[0031] 2) Place the sol in a vacuum drying oven at 120°C for 18 hours to obtain a gel;

[0032] 3) The gel was heat-treated for 5 hours in an Ar gas environment at 350 ° C, and cooled with the furnace to obtain the desired room temperature ferromagnetic Zn 0.95 Fe 0.05 O dilute magnetic semiconductor powder.

Embodiment 3

[0033] Example 3: Preparation of ferromagnetic Zn at room temperature 0.93 Fe 0.07 O dilute magnetic semiconductor powder

[0034] 1) Zinc acetate (5.1g) and ferrous acetate (0.42g) with a molar percentage of 93:7 were dissolved in 25ml of ethylene glycol methyl ether, respectively, and 0.5ml of ethanolamine was added, and 2.5ml of ferrous acetate was added to the ferrous acetate solution. g ascorbic acid, stirred at room temperature until fully dissolved, then slowly added the ferrous acetate solution into the zinc acetate solution, continued to stir for 12 hours, then left to age for 24 hours to obtain a transparent, uniform sol;

[0035] 2) Place the sol in a vacuum drying oven at 100°C for 12 hours to obtain a gel;

[0036]3) The gel was heat-treated for 3 hours in an Ar gas environment at 300° C., and cooled in a furnace to obtain the desired powder.

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Abstract

The invention discloses a preparation method of the diluted magnetic semiconductor material of iron-doped zinc oxide, which adopts the technical proposal that zinc acetate and iron acetate are adopted as the precursor which is dissolved in ethylene glycol monomethyl ether with ethanolamine as a stabilizer and ascorbic acid as an antioxidant added into the solution, all of which are stirred to form a sol; after the processing of drying and heating, the diluted magnetic semiconductor material dust can be obtained from the sol, or the diluted magnetic semiconductor material film can be obtained by adding the sol in drops on a substrate and by a spin coating method. In the invention, ascorbic acid plays a key role during the sample preparation, which can protect significantly Fe <2+> ions from being oxidized in air environment and allow the ions to get into the ZnO lattices more easily to complete disordered substitution and increase the Fe doping content to 10% which is higher significantly than the most doping concentration 7% in traditional solution-sol preparation process. The sample keeps a single ZnO wurtzite structure and presents obvious room-temperature ferromagnetism.

Description

technical field [0001] The invention relates to a preparation method of zinc oxide-doped iron dilute magnetic semiconductor material. Zn with room temperature ferromagnetism is mainly prepared by sol-gel method and the introduction of ascorbic acid 1-x Fe x O dilute magnetic semiconductor films and powders. Background technique [0002] The modern information industry mainly uses the degree of freedom of electrons in semiconductor devices to process and transmit information, and storage devices such as magnetic tapes, hard disks, and magneto-optical disks use the degree of freedom of electrons to store information. How to combine these two properties to explore new functional materials and further enhance the performance of semiconductor and magnetic devices will be the goal of the next development. The main reason why the spin of carriers in traditional semiconductor materials is not fully utilized is that most of the materials used in the information industry are diamag...

Claims

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Application Information

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IPC IPC(8): H01F41/14C01G9/02C23C18/00H01L21/368H01L43/12
Inventor 严密顾浩马天宇罗伟
Owner ZHEJIANG UNIV
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