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Carbon nanometer tube nano electronic device and manufacturing method thereof

A nanoelectronic device and carbon nanotube technology, applied in the field of nanoelectronics, can solve the problems of small switching current ratio and on-state current value, unstable doping, poor performance of n-type devices, etc.

Active Publication Date: 2011-01-19
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the performance of the n-type device obtained by the first method is poor, and the switching current ratio and the on-state current value are relatively small
Although the second method can obtain n-type devices with better performance, the doping is not stable, and the device must be in a certain chemical environment. When the environment (such as temperature, atmosphere) changes, the performance of the device changes accordingly. , less practical

Method used

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  • Carbon nanometer tube nano electronic device and manufacturing method thereof
  • Carbon nanometer tube nano electronic device and manufacturing method thereof
  • Carbon nanometer tube nano electronic device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Embodiment 1: A single-walled carbon nanotube field-effect transistor with scandium (Sc) as the bottom gate structure of the source and drain electrodes and its preparation

[0022] Such as figure 1 shown in SiO 2 A single-walled carbon nanotube field-effect transistor with a gate dielectric 4 and a back gate 5 structure using Si, its source (S) 2 and drain (D) 3 electrode materials are scandium (Sc), located at the side of the single-walled carbon nanotube 1 ends. Concrete preparation steps are as follows:

[0023] 1. By CVD growth, or by dropping the dispersed carbon tube solution onto the substrate, the Si / SiO 2 carbon nanotubes on a substrate;

[0024] 2. Observing with a scanning electron microscope or an atomic force microscope, record the specific position of the carbon nanotubes;

[0025] 3. Coating photoresist on the carbon nanotubes and forming the shape of the electrode by optical exposure or electron beam lithography;

[0026] 4. Put the photolithograp...

Embodiment 2

[0032] Example 2: Carbon nanotube field effect transistor with Sc as top gate structure and its preparation

[0033] Such as Figure 5The shown carbon nanotube field effect transistor with Sc as the top gate structure, its source (S) 8, drain (D) 10, and gate (G) 6 electrode materials are all scandium (Sc), single-walled carbon nanotubes 11 in Al 2 o 3 Under the gate dielectric layer 7, SiO 2 9 and Si12 on the substrate. Concrete preparation comprises the following steps:

[0034] 1. By CVD growth, or drop the dispersed carbon tube solution onto the substrate to obtain Si / SiO 2 carbon nanotubes on a substrate;

[0035] 2. Observe and record the specific position of carbon nanotubes through scanning electron microscope or atomic force microscope;

[0036] 3. Coating photoresist on the carbon nanotubes and forming the shape of the gate electrode by optical exposure or electron beam lithography;

[0037] 4. Put the sample into the atomic layer deposition system to grow a...

Embodiment 3

[0042] Example 3: Connecting scandium metal tips to carbon nanotubes using a nanoprobe manipulation system

[0043] 1. Obtain carbon nanotubes;

[0044] 2. Use metallic scandium (Sc) as the tip of the probe, and with the assistance of a scanning electron microscope or a transmission electron microscope, directly contact the scandium tip 14 to both ends of the carbon nanotube 13 to establish an electrode connection. Such as Image 6 (in scanning electron microscope), Figure 7 (in the transmission electron microscope).

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Abstract

The present invention provides a method of realizing high performance contact between a carbon nano-tube and a metal electrode, so as to obtain carbon nano-tube nano-electronic device with stable high performance. The nano-electronic device based on the carbon nano-tube adopts scandium metal as an electrode for the connection with the carbon nano-tube. High performance contact can be realized only by connecting the scandium metal with the carbon nano-tube through various micromachining techniques. The method can be used to prepare n-type carbon nano-tube field effect transistors with high performance, and can be used to prepare other various high performance nano-electronic devices based on the carbon nano-tube. The nano-electronic device comprises biological and chemical sensing devices.The method has very important significance for promoting the practical utilization process of the nano-electronic device, and has broad application prospects.

Description

technical field [0001] The invention belongs to the field of nanoelectronics, in particular to a nanoelectronic device based on carbon nanotubes and a method for realizing high-performance contact between carbon nanotubes and metal electrodes. Background technique [0002] The research of nanoelectronic devices is the most important field in today's nanotechnology. Carbon nanotubes are considered to be the most promising building materials for nanoelectronic devices due to their unique electrical properties. Various nanoelectronic devices constructed with carbon nanotubes, such as field effect transistors, logic operation circuits, oscillators, biological and chemical sensors, etc. have been widely studied, and the performance of the devices has surpassed the current microelectronic devices in many aspects. These have greatly promoted the practical process of nanoelectronic devices. [0003] Various nanoelectronic devices based on carbon nanotubes inevitably involve the co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/43H01L23/48H01L21/28
CPCH01L2924/0002
Inventor 梁学磊张志勇王胜姚琨胡又凡陈清彭练矛
Owner PEKING UNIV