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Method for preparing bismuth telluride nano-tube

A technology of nanotubes and bismuth telluride, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of low output, high experimental conditions, and long reaction time of electrochemical deposition, and achieve short reaction time , simple process, and small product particle size

Inactive Publication Date: 2010-12-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Both the hydrothermal method and the low-temperature solution chemical method react in an alkaline solution, and the reaction time is long (6 to 50 hours). The hydrothermal method also requires high experimental conditions (high temperature and high pressure), while the electrochemical deposition method has a low output. , the process is complex, therefore, if a simple and rapid preparation of Bi can be developed 2 Te 3 Nanotube approach that will greatly expand its field of application

Method used

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  • Method for preparing bismuth telluride nano-tube
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  • Method for preparing bismuth telluride nano-tube

Examples

Experimental program
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Embodiment 1

[0021] 1) Analytical pure Bi(NO 3 ) 3 ·5H 2 O was dissolved in 30ml of ethylene glycol solution to form solution A. will analyze pure TeO 2 Dissolve in 7mlHNO 3 and ethylene glycol mixed solution (HNO 3 The concentration of the solution is 5M, HNO 3 And the volume ratio of ethylene glycol is 1:1), dubbed solution B. The molar ratio of Bi element and Te element is 1.8:1.

[0022] 2) Put the solution A in a microwave reactor, raise the temperature to 160° C. with a power of 50 W, and stir while raising the temperature. Then add solution B quickly, and react at this temperature for 10-20 minutes.

[0023] 3) After the reaction, the product is slowly cooled to room temperature, centrifuged, washed with deionized water and organic solvent for several times, and then vacuum-dried to obtain the material of the present invention.

Embodiment 2

[0025] 1) The analytically pure BiCl 3 Dissolve in 30ml of dimethyl sulfoxide solution to form solution A. will analyze pure TeO 2 Dissolve in 10ml of a mixed solution of nitric acid and dimethyl sulfoxide (HNO 3 The concentration of the solution is 5M, HNO 3 and dimethyl sulfoxide in a volume ratio of 2:1), dubbed solution B. The molar ratio of Bi element and Te element is 1.6:1.

[0026] 2) Put the solution A in a microwave reactor, raise the temperature to 180° C. with a power of 50 W, and stir while raising the temperature. Then add solution B quickly, and react at this temperature for 20 minutes to 40 minutes.

[0027] 3) After the reaction, the product is slowly cooled to room temperature, centrifuged, washed with deionized water and organic solvent for several times, and then vacuum-dried to obtain the material of the present invention.

[0028] Adopt Rigaku-RINT2000 type polycrystal diffractometer (CuKα ray, wavelength=0.15406nm) to carry out structure analysis ...

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Abstract

The invention relates to a method for preparing bismuth telluride (Bi2Te3) nanotubes. The method is characterized in that the inorganic salt of Bi element is dissolved into the organic solvent and inorganic salt of Te element is dissolved into the mixed solution of acid and organic solvent by microwave liquid phase heating; two kinds of solution are mixed and react for 10-60min by heating up to 100-200 DEG C with microwave; cooling the obtained product to the room temperature; centrifuging; washing for a plurality of times; and vacuum-drying to obtain bismuth telluride nanotubes with the diameter of 0.05-0.2Mum, length of 0.5-2Mum and wall thickness of 1-25nm. The tapered bismuth telluride nanotube has one open end and one sealed end. The method has the advantages of simple process, shortreaction time, high product purity and small particle size.

Description

technical field [0001] The present invention relates to the preparation method of semiconductor thermoelectric nano material, specifically bismuth telluride (Bi 2 Te 3 ) Nanotube preparation method. Background technique [0002] Thermoelectric conversion technology is a technology in which semiconductor materials use Seebeck effect (Seebeck) and Peltier effect (Peltier) to directly convert heat energy and electric energy. It has the advantages of no emission of pollutants, wide applicable temperature range, small system size, and long life It has been applied in fields such as thermoelectric generators and refrigerators. However, due to the low conversion efficiency of thermoelectric materials, its application range is greatly limited. The performance of thermoelectric materials can generally be evaluated by the dimensionless value ZT, ZT=Tα 2 σ / λ, where T is the absolute temperature, α is the Seebeck coefficient, σ is the electrical conductivity, and λ is the thermal co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82B3/00B82B1/00
Inventor 姚琴朱英杰陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI