Improved phase change memory unit component structure

A technology of phase change memory and device structure, which is applied in the field of micro-nano electronics, can solve the problem of insufficient heating efficiency, and achieve the effects of low power consumption, uniform thermal field, low power consumption and high-speed storage

Inactive Publication Date: 2008-09-17
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, all these methods are not high enough in heating effic

Method used

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  • Improved phase change memory unit component structure
  • Improved phase change memory unit component structure
  • Improved phase change memory unit component structure

Examples

Experimental program
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Effect test

Embodiment 1

[0023] The cross-sectional structure of the device is as figure 1 . The electrode material 1 is W, the heating electrode 2 material is TiN, the phase change material 4 is GST, and the filling material 3 is SiO 2 , the material of the upper contact electrode 5 is TiN, the material of the upper electrode 6 is W, and the surrounding insulating material 7 is SiO 2 . The added material has a diameter of 120nm and a thickness of 60nm. The preparation process is as follows:

[0024] 1. Prepare lower electrode through holes on the substrate (including MOS impurity diffusion regions, source and drain regions, electrode leads, through holes, or PN diodes, bipolar transistors, etc.), the size of which is adjusted according to process conditions, and the size of the through holes can be adjusted Larger or smaller than the size of the phase change material hole, then deposit the lower electrode in the hole, such as W, TiN, silicide and other conductive media to form a metal plug.

[002...

Embodiment 2

[0030] The cross-sectional structure of the device is as Image 6 . exist Image 6 In the example, 1 is the lower electrode W, 2 is BEC, and the heating electrode material 3 is SiO 2 Insulation material, 4 is phase change material such as GST, 5 is TEC upper contact electrode material, 6 is upper electrode W, 7 is SiO 2 . Compared with Example 1, the structure process is complicated, but the thermal efficiency is higher.

[0031] The preparation process is as follows:

[0032] 1. Prepare lower electrode through holes on the substrate (including MOS impurity diffusion regions, source and drain regions, electrode leads, through holes, or PN diodes, bipolar transistors, etc.), the size of which is adjusted according to process conditions, and the size of the through holes can be adjusted Larger or smaller than the size of the phase change material hole, and then deposit the lower electrode in the hole, such as W, TiN or silicide and other conductive media to form a metal plu...

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Abstract

The invention relates to an improvement of phase-change memory single device structure, the invention is characterized in that above round bottom electrode, the effective control of transporting down the heat energy of heating phase-change material is implemented, through a certain thickness concentric cylinder dielectric layer, on the one hand, the invention protects well CMOS-circuit which composes the lower punch section of PCRAM-chip from impact of larger heat energy and carrier, on the other hand the invention decreases the direct contact area between the phase-change material and bottom electrode, and also obtains good insulation effect, and the dielectric layer and small phase-change region can enclose cover the bottom electrode, and implements the rest process easily, and the interface of top electrode and the phase-change material also can use the same design method of cylinder-shaped, thus symmetric up and lower structure and electrode causes electric field uniform, then the uniform electric field causes thermal field uniform, the uniform thermal field is in favor of implementing low-voltage, low-power and high-speed storage, and considers integration with the CMOS technology.

Description

technical field [0001] The invention relates to an improvement of the structure of a phase-change memory unit. Through the improved structure, the heating efficiency of the device can be improved and the power consumption of the device can be reduced. It belongs to the technical field of micro-nano electronics. Background technique [0002] Phase change memory technology is based on Ovshinsky's proposal in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and early 1970s (Appl. Phys. Lett., 18, 254-257, 1971) The idea that the phase change film can be applied to the phase change storage medium is established, and it is a storage device with low price and stable performance. Phase-change memory can be made on a silicon wafer substrate, and its key materials are recordable phase-change films, heating electrode materials, heat-insulating materials, and lead-out electrode materials. Including how to reduce device material and so on. The basic principle of phase change me...

Claims

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Application Information

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IPC IPC(8): H01L45/00H01L27/24G11C11/56G11C16/02
Inventor 宋志棠凌云龚岳峰刘波封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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