Electromagnetic micro-torsional pendulum resonant vibration type sensor based on micro-electronic mechanical skill
A resonant sensor and torsional pendulum resonator technology, applied in the field of micromechanical sensing, can solve the problems of system error, energy loss, sensor quality factor decline, etc., and achieve the effect of simple manufacturing process and improved quality factor
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Embodiment approach 1
[0051] Embodiment 1: The dielectric layer is used as the torsion material, and four photolithography is required in the production process. The biggest feature is that the process is simple. The production process is briefly described as follows:
[0052] 1) The dielectric layer (silicon dioxide and low-stress silicon nitride) on the surface of the silicon wafer grows to 2-3 μm;
[0053] 2) Evaporation or sputtering growth and patterning of excitation and vibration pickup metal electrodes (Cr+Au, 0.2 μm);
[0054] 3) PECVD growth of passivation dielectric protection layer (0.5-1μm);
[0055] 4) Sensitive layer growth and patterning;
[0056] 5) The silicon on the back is deeply etched to the silicon dioxide dielectric layer;
[0057] 6) Reactive plasma etching (RIE) of the front dielectric layer to release the micro-twist structure.
Embodiment approach 2
[0058] Embodiment 2: use SOI (Silicon On Insulator) substrate, and use SOI device layer (2-3 μm) as micro-kink material. Similar to Embodiment 1:
[0059] 1) SOI (Silicon On Insulator) substrate oxidation;
[0060] 2) Evaporation or sputtering growth and patterning of excitation and vibration pickup metal electrodes (Cr+Au, 0.2 μm);
[0061] 3) PECVD growth of passivation dielectric protection layer (0.5-1μm);
[0062] 4) Sensitive layer growth and patterning;
[0063] 5) The silicon on the back is deeply etched to the silicon dioxide dielectric layer;
[0064] 6) Reactive plasma etching (RIE) and deep etching of the front dielectric layer and the device layer of SOI to release the micro-twist structure.
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