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Method for preparing immobilized DNA guiding substrate surface nano-titanium dioxide film growth

A nano-titanium dioxide and thin-film growth technology, applied in the direction of coating, etc., can solve the problems of complex equipment, high substrate temperature, and weak substrate bonding, etc., and achieve the effect of uniform film surface and strong adhesion

Inactive Publication Date: 2008-12-03
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These preparation methods have their own disadvantages, such as complex equipment, high substrate temperature, weak combination with the substrate, high temperature calcination after preparation, etc.

Method used

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  • Method for preparing immobilized DNA guiding substrate surface nano-titanium dioxide film growth
  • Method for preparing immobilized DNA guiding substrate surface nano-titanium dioxide film growth

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The preparation method for the growth of nano-titanium dioxide film on the surface of the substrate guided by immobilized DNA comprises the following steps:

[0025] (1) Substrate cleaning and drying:

[0026] Wash the single crystal silicon wafer with chloroform and distilled water successively under ultrasonic enhancement to wash away the floating dust and organic impurities on the surface, take out the substrate from the washing solution and place it in a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 7:3 Soak at 80°C for 20 minutes, take it out, wash the substrate with distilled water and isopropanol in turn, and dry it with nitrogen;

[0027] (2) Immobilization of DNA molecules on the surface of the substrate:

[0028] ①Put the cleaned and dried substrate into a solution of 0.5% by volume of aminopropyltrimethoxysilane in anhydrous cyclohexane, and soak it at 25°C for 90 minutes to form self-assembly of aminosilane on the...

Embodiment 2

[0037] The preparation method for the growth of nano-titanium dioxide film on the surface of the substrate guided by immobilized DNA comprises the following steps:

[0038] (1) Substrate cleaning and drying:

[0039] Wash the monocrystalline silicon wafer with chloroform and water under ultrasonic enhancement, take out the substrate from the washing liquid, and soak it in the mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 7:3 at 90°C for 20 minutes, take it out and put The substrate was cleaned with distilled water and isopropanol, and dried with nitrogen;

[0040] (2) Immobilization of DNA molecules on the surface of the substrate:

[0041] ① Put the cleaned and dried substrate into an anhydrous cyclohexane solution with a volume percentage of 3% aminopropyltriethoxysilane and soak it at 15°C for 30 minutes to form a self-assembled film of aminosilane on the surface layer, take out the treated substrate, wash it with cyclohexane an...

Embodiment 3

[0047] The preparation method for the growth of nano-titanium dioxide film on the surface of the substrate guided by immobilized DNA comprises the following steps:

[0048] (1) Substrate cleaning and drying:

[0049] Wash the glass sheet with chloroform and water under ultrasonic strengthening, take out the substrate from the washing solution, place it in a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a volume ratio of 3:1, soak it for 15 minutes at 85°C, and remove the substrate after taking it out. The slices were washed with distilled water and isopropanol, and dried with nitrogen;

[0050] (2) Immobilization of DNA molecules on the surface of the substrate:

[0051] ① Put the cleaned and dried substrate into an anhydrous toluene solution with a volume percentage of 1.5% aminopropyltriethoxysilane and soak it at 30°C for 60 minutes to form a self-assembled film of aminosilane on the surface, The treated substrate was taken out, washed with cyclo...

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Abstract

The invention discloses a preparation method for leading the growth of a nanometer titanium dioxide film on the surface of a substrate by DNA immobilization. The method comprises the following steps that: (1) the substrate is cleaned and dried; (2) DNA molecules on the surface of the substrate are immobilized; and (3) the substrate treated by the step (2) is immersed into a 2 to 20 mM of TiCl4 aqueous solution containing hydrochloric acid and subject to the sedimentation of the nanometer titanium dioxide film. The method has no environmental pollution, realizes the immobilization and the ordered assembly of DNA and leads the assembly and growth of the nanometer titanium dioxide film at a low temperature with the substrate as a template. The nanometer titanium dioxide film prepared on the substrate surface by the method needs no high-temperature calcination, has a certain crystal structure, even film surface and strong adhesive force with the substrate surface and can be used for preparing a transparent conductive film and a self-cleaning surface of a solar battery and other functional devices.

Description

technical field [0001] This patent relates to a preparation method of a nano-titanium dioxide film. Background technique [0002] As an important semiconductor material, titanium dioxide has the characteristics of high photocatalytic activity, stable chemical properties, and high refractive index, so it has a very wide range of applications in the fields of photocatalysis, coatings, and optoelectronic devices. At present, the commonly used methods for preparing titanium dioxide thin films mainly include sputtering technology, chemical vapor deposition technology, electrodeposition method and recently widely used sol-gel technology. These preparation methods have their own disadvantages, such as complicated equipment, high substrate temperature, weak combination with the substrate, high-temperature calcination after preparation, and the like. Contents of the invention [0003] The purpose of the present invention is to overcome the deficiencies in the prior art, and provid...

Claims

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Application Information

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IPC IPC(8): C03C17/34C04B41/52C04B41/89C08J7/06C03C17/36
Inventor 李张金利蒋玉婷王宪徐双庆吉俊懿
Owner TIANJIN UNIV
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