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Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array

A nanotube array and nanorod technology, which is applied in the field of synthesizing ZnO nanorods/nanotube arrays, can solve the problems of poor uprightness of one-dimensional ZnO nanostructures, adverse effects of ZnO nanostructures, etc.

Inactive Publication Date: 2008-12-10
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the above-mentioned methods use substrates that do not match the ZnO lattice, and the uprightness of the one-dimensional ZnO nanostructure is poor.
In order to ensure the verticality, some studies have used to deposit a layer of buffer layer on the substrate that is oriented and matched with the ZnO lattice, but the existence of these buffer layers often has an adverse effect on the application of ZnO nanostructures in the future.

Method used

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  • Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array
  • Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array
  • Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array

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Experimental program
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Embodiment 1

[0045] (1) Prepare the seed layer precursor solution: dissolve zinc acetate and ethanolamine (0.3M) in equimolar amounts into ethanol; after fully stirring for 1 hour, seal and homogenize for 24 hours;

[0046] (2) Clean the deposition substrate: ultrasonically clean and dry the silicate glass substrate one by one with acetone, alcohol, and deionized water;

[0047] (3) Spin-coating precursor solution: place the deposition substrate on a homogenizer, add the prepared seed layer precursor solution dropwise, and spin-coat at a speed of 7500 rpm for 30s;

[0048] (4) Solvent evaporation: transfer the spin-coated substrate to a hot plate at 280° C. for 5 minutes;

[0049] (5) Transfer to a rapid annealing furnace, first pyrolyze at 300° C. for 10 minutes, and then perform rapid annealing at 500° C. for 5 minutes to obtain a ZnO seed layer. Its surface and cross-sectional morphology are as figure 1 As shown, the seed particles are distributed on the substrate as single particles ...

Embodiment 2

[0053] (1) Prepare the seed layer precursor solution: dissolve zinc acetate and ethanolamine (0.075M) in equimolar amounts into ethanol; after fully stirring for 1 hour, seal and homogenize for 24 hours;

[0054] (2) Clean the deposition substrate: ultrasonically clean and dry the monocrystalline silicon wafers one by one with acetone, alcohol, and deionized water;

[0055] (3) Spin-coating precursor solution: place the deposition substrate on a homogenizer, add the prepared seed layer precursor solution dropwise, and spin-coat at a speed of 3000 rpm for 30s;

[0056] (4) Solvent evaporation: transfer the spin-coated substrate to a hot plate at 280°C for 10 minutes;

[0057] (5) Transfer to a rapid annealing furnace, first treat at 300°C for 10 minutes, and then rapidly anneal at 500°C for 5 minutes. Figure 4 Middle P2 is the XRD spectrum of the obtained ZnO seed layer film. The seed layer is randomly oriented in (001), (100) and (101) directions;

[0058] (6) The randomly...

Embodiment 3

[0061] (1) Prepare the seed layer precursor solution: dissolve zinc acetate and ethanolamine (0.15M) in equimolar amounts into ethanol; after fully stirring for 1 hour, seal and homogenize for 24 hours;

[0062] (2) Clean the deposition substrate: ultrasonically clean and dry the monocrystalline silicon wafer substrate one by one with acetone, alcohol, and deionized water;

[0063] (3) Spin-coating precursor solution: place the deposition substrate on a homogenizer, add the prepared seed layer precursor solution dropwise, and spin-coat at a speed of 4500 rpm for 30s;

[0064] (4) Transfer the spin-coated substrate to a hot plate at 280° C. for 5 minutes;

[0065] (5) Transfer to a rapid annealing furnace, first pyrolyze at 300°C for 10 minutes, and then heat treat at 500°C and 650°C for 5 minutes respectively. Figure 5 FESEM images of the surface (a) and cross-section (b) of the obtained seed layer. It can be seen that after high temperature growth, the seed size increases ...

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Abstract

The invention relates to a method for synthesizing a ZnO nano-rod / nanotube array in a water solution. An array film can be applied in the aspects of ultraviolet lasing fluorescence, nano sensors, nanocrystal solar cells (including dye sensitization solar cells, inorganic ultrathin absorption layer solar cells and quantum-dot solar cells) and so on. The method comprises the following steps that: by adoption of the combination of the sol-gel spincoating method and the quick annealing technique, a (001) highly oriented solid or hollow ZnO seed layer film is deposited on various substrate surfaces; and the ZnO seed layer film is epitaxially grown in the zinc nitrate water solution, and then the highly oriented ZnO nano-rod / nanotube array film is obtained. The method can realize single-particle distribution of a seed layer and single-crystal growth of a nano-rod on a substrate, and can realize epitaxial growth of the ZnO nano-rod / nanotube and control of the shapes such as the diameter, the length and so on of the ZnO nano-rod / nanotube through control of the concentration, the compositions and the pH value of a growth solution and the growth time.

Description

technical field [0001] The invention relates to a method for synthesizing a ZnO nanorod / nanotube array in an aqueous solution. The array film can be applied to ultraviolet laser light emission, nanosensors, and nanocrystalline solar cells (including dye-sensitized solar cells, inorganic extremely thin absorbing layer solar cells, etc.) Batteries and quantum dot solar cells) etc. Background technique [0002] Zinc oxide is a wide-bandgap (3.37eV) semiconductor material with good photoelectric, piezoelectric, catalytic and other properties. In recent years, a large number of studies on one-dimensional ZnO structures such as nanorods, nanorods and nanotubes have been carried out at home and abroad. These one-dimensional ZnO array structures have broad application prospects in the fields of sensors, optoelectronic devices, and solar cells. [0003] Currently available methods for preparing one-dimensional ZnO arrays include chemical vapor deposition and liquid phase growth. T...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B29/62C01G9/02H01G9/20H01L31/0296H01L51/42
CPCY02E10/542Y02E10/549
Inventor 武卫兵胡广达崔守刚
Owner UNIV OF JINAN
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