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Cubic aluminium nitride film, preparation method thereof and application

A technology of aluminum nitride and thin film, which is applied in the direction of liquid chemical plating, metal material coating process, coating, etc., can solve the problem that the controllability of process parameters is difficult to achieve, hinders the large-scale AlN thin film, and the cost of low-temperature deposition equipment is expensive issues such as low cost, strong stability and controllability, and good crystallinity

Active Publication Date: 2019-12-17
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Most of the existing methods such as: Metal Organic Chemical Vapor Deposition (MOCVD), Molecular Beam Epitaxy (MBE), Pulsed Laser Deposition (PLD) and Magnetron Reactive Sputtering Physical Deposition, although AlN films with good properties can be prepared, However, the experiment has strict requirements on the process, the controllability of the process parameters is difficult to meet the performance requirements, and the low-temperature deposition equipment is expensive and other shortcomings hinder the large-scale and low-cost preparation of AlN thin films.

Method used

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  • Cubic aluminium nitride film, preparation method thereof and application
  • Cubic aluminium nitride film, preparation method thereof and application
  • Cubic aluminium nitride film, preparation method thereof and application

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Embodiment 1

[0033] 1. Using aluminum chloride hydrate and urea as raw materials, set the molar ratio of urea / aluminum chloride to 6:1, weigh 1g (0.0041mol) of aluminum chloride hydrate and 1.49g (0.0249mol) of urea, and mix aluminum chloride (AlCl 3 ·6H 2 O, 99.99%) and urea (CO(NH 2 ) 2 , 99.5%) were respectively dissolved in 20ml of methanol solvent, after being completely dissolved, the urea solution was added to the aluminum chloride solution while stirring to obtain a clear and transparent stable precursor salt solution, and the constant temperature (80°C) was continuously stirred until the solution was 10ml to obtain the precursor salt concentrated solution, the aluminum ion concentration of which is 0.4142mol / L;

[0034] 2. Coat the concentrated solution of the precursor salt on the magnesium oxide single crystal substrate by spin coating, under the protection of nitrogen atmosphere (nitrogen flow rate: 0.4L / min), heat up to Calcination was carried out at 1000° C. and the holdi...

Embodiment 2

[0036] 1. Using aluminum chloride hydrate and urea as raw materials, set the molar ratio of dicyandiamide / aluminum chloride to 14:1, weigh 1g (0.0041mol) of aluminum chloride hydrate and 3.48g (0.0580mol) of urea, and mix the chlorine Aluminum (AlCl 3 ·6H 2 O, 99.99%) and urea (CO(NH 2 ) 2 , 99.5%) were respectively dissolved in 20ml of methanol solvent, after being completely dissolved, the urea solution was added to the aluminum chloride solution while stirring to obtain a clear and transparent stable precursor salt solution, and the constant temperature (80°C) was continuously stirred until the solution was 20ml, to obtain the precursor salt concentrated solution, its aluminum ion concentration is 0.2071mol / L;

[0037] 2. Coat the concentrated solution of the precursor salt on the alumina single crystal substrate by spin coating, under the protection of nitrogen atmosphere (nitrogen flow rate: 0.4L / min), raise the temperature in the alumina crucible at a heating rate of ...

Embodiment 3

[0039] 2.1. Using aluminum chloride hydrate and urea as raw materials, set the molar ratio of urea / aluminum chloride to 6:1, weigh 1g (0.0041mol) of aluminum chloride hydrate and 1.49g (0.0249mol) of urea, and mix the chlorine Aluminum (AlCl 3 ·6H 2 O, 99.99%) and urea (CO(NH 2 ) 2, 99.5%) were dissolved in 10ml of glycerol solvent respectively, after being completely dissolved, the urea solution was added to the aluminum chloride solution while stirring to obtain a clear and transparent stable precursor salt solution, and the constant temperature stirring (80°C) to The solution is 20ml, and the precursor salt concentrated solution is obtained, and its aluminum ion concentration is 0.2071mol / L;

[0040] 2. Coat the concentrated solution of the precursor salt on the silicon single crystal substrate by spin coating, under the protection of a nitrogen atmosphere (nitrogen flow rate: 0.4L / min), raise the temperature in an alumina crucible at a rate of 3°C / min to 1000 ℃ for cal...

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Abstract

The invention belongs to the field of ceramic materials, and discloses a cubic aluminium nitride film, a preparation method thereof and application. The method includes the following the steps: takinghydrated aluminium chloride and urea as raw materials; respectively dissolving aluminium chloride and urea in an alcohol solvent; after heating and dissolving at a certain, slowing adding the urea solution into the aluminium chloride solution to obtain a clarified and transparent stable precursor saline solution; enabling the concentration of the solution to be maximum concentration at room temperature; coating the obtained precursor saline solution on a single crystal substrate through a rotary coating method; under the protection of nitrogen atmosphere, calcining at 1000 DEG C in an aluminium nitride crucible, keeping the temperature, and finally obtaining the aluminium nitride film growing epitaxially on the substrate. The method is simple in preparation technology and low in production cost, can be used for precisely controlling the property of the precursor saline solution and the heat treatment technology of the precursor film, can be used for effectively controlling the epitaxial growth of the film, thereby preparing the film with excellent performance.

Description

technical field [0001] The invention belongs to the field of ceramic materials, and in particular relates to a cubic aluminum nitride film and its preparation method and application. Background technique [0002] AlN (aluminum nitride) has potential development and application value in both structural ceramics and functional ceramics. The theoretical thermal conductivity of AlN can reach 320W / m·K, and it has a small thermal expansion coefficient. It is an important ceramic substrate material and heat dissipation filler. AlN has the widest direct bandgap (6.2eV) among group III nitrides, so it has great application prospects in deep ultraviolet optical devices and photoluminescent host materials. AlN has little or even negative electron affinity, and its application in field emission devices is gradually increasing. AlN has a strong ability to resist molten metal erosion, and is an ideal crucible material for melting and casting pure iron, aluminum or aluminum alloy. In ad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/12
CPCC23C18/1204C23C18/1245C23C18/1279C23C18/1283
Inventor 程艳玲黎可旭杨盛凯张海南魏世宏林华泰
Owner GUANGDONG UNIV OF TECH
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