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ZnO based LED of multiple quantum wells

A technology of light-emitting diodes and multi-quantum well layers, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems that have not been developed before, achieve good crystal quality, reduce lattice mismatch, and improve hole injection efficiency.

Inactive Publication Date: 2009-02-04
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, no international research has been carried out in this area

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  • ZnO based LED of multiple quantum wells
  • ZnO based LED of multiple quantum wells
  • ZnO based LED of multiple quantum wells

Examples

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Embodiment 1

[0020] 1) Use a 2-inch monocrystalline silicon (111) polished wafer as the substrate, first use alcohol to ultrasonically clean, and then use HF to clean the natural oxide layer on the surface. Then put the substrate into the growth chamber of the pulsed laser deposition system, and the growth chamber is evacuated to 6×10 -4 pa. Then heat the substrate to 300°C, adjust the oxygen mass flow meter to control the oxygen pressure at 0.1Pa, set the laser parameters to 280mJ, 5Hz, and deposit a layer of 50nm ZnO buffer layer 2 under these conditions.

[0021] 2) Raise the temperature to 600°C and keep the oxygen pressure constant, deposit 1000nm of Al-doped n-type ZnO film layer 3 and 400nm of Al-doped n-type ZnO in sequence 0.8 Mg 0.2 O confinement layer 4, alternately deposited Zn 0.9 Mg 0.1 O layer and Zn 0.95 Cd 0.05 O layer, forming 7 periods of multi-quantum well layer 5, in this example, Zn 0.9 Mg 0.1 O layer and Zn 0.95 Cd 0.05 O layer lattice mismatch degree is 0. ...

Embodiment 2

[0026]1) With a 2-inch ZnO single crystal as the substrate, first use alcohol to ultrasonically clean it, and then use HF to clean the natural oxide layer on the surface. Then put the substrate into the growth chamber of the pulsed laser deposition system, and the growth chamber is evacuated to 2×10 -4 pa. Then heat the substrate to 400°C, adjust the oxygen mass flow meter to control the oxygen pressure at 0.5Pa, set the laser parameters to 280mJ, 5Hz, and deposit a layer of 50nm ZnO buffer layer 2 under these conditions.

[0027] 2) Raise the temperature to 600°C and keep the oxygen pressure constant, deposit 1000nm of Al-doped n-type ZnO film layer 3 and 400nm of Al-doped n-type ZnO in sequence 0.6 Mg 0.4 O confinement layer 4, alternately deposited Zn 0.7 Mg 0.3 O layer and Zn 0.9 Cd 0.1 O layer, forming 10 periods of multi-quantum well layer 5, in this example, Zn 0.7 Mg 0.3 O layer and Zn 0.9 Cd 0.1 O layer lattice mismatch degree is 0. Then deposit 200nm of Na-...

Embodiment 3

[0030] 1) With a 2-inch ZnO single crystal as the substrate, first use alcohol to ultrasonically clean it, and then use HF to clean the natural oxide layer on the surface. Then put the substrate into the growth chamber of the pulsed laser deposition system, and the growth chamber is evacuated to 5×10 -5 pa. Then heat the substrate to 400°C, adjust the oxygen mass flow meter to control the oxygen pressure at 20Pa, set the laser parameters to 280mJ, 5Hz, and deposit a layer of 50nm ZnO buffer layer 2 under these conditions.

[0031] 2) Raise the temperature to 600°C and keep the oxygen pressure constant, deposit 800nm ​​Al-doped n-type ZnO film layer 3 and 400nm Al-doped n-type ZnO film in sequence 0.7 Mg 0.3 O confinement layer 4, alternately deposited Zn 0.8 Mg 0.2 The O layer and the ZnO layer form a multi-quantum well layer 5 with 16 periods. In this example, Zn 0.8 Mg 0.2 The degree of lattice mismatch between the O layer and the ZnO layer is less than 5%. Then deposi...

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Abstract

The invention discloses a ZnO MQW (Multi-Quantum well) luminous diode. A ZnO buffer layer, an n-type ZnO layer, an n-type Zn1-xMgxO confinement layer, a Zn1-xMgxO / Zn1-yCdyO MQW layer formed by the alternative deposition of Zn1-xMgxO and Zn1-yCdyO, a Na-doped p-type Zn1-xMgxO film, a Na-doped p type ZnO film layer and a second electrode are sequentially arranged from upper to lower on a substrate. A first electrode and the n-type Zn1-xMgxO confinement layer are deposited on the n-type ZnO layer in parallel. The ZnO MQW (Multi-Quantum well) luminous diode is of good crystallization quality, good optical performance, good electric performance and high luminous efficiency.

Description

technical field [0001] The invention relates to a ZnO-based multi-quantum well light-emitting diode. Background technique [0002] As a wide bandgap semiconductor, ZnO has its unique advantages. The energy band width at room temperature is 3.37eV, and the exciton binding energy is 60meV, which is much larger than GaN's exciton binding energy of 25meV and room temperature molecular thermal kinetic energy of 26meV. Therefore, It has great potential to realize high-brightness semiconductor light-emitting diodes and high-power semiconductor laser devices. A major problem for ZnO to be applied in optoelectronic devices is the p-type doping problem. Group V element-doped p-type ZnO has been extensively studied. However, theoretical calculations show that, compared with group V elements, group I elements Li and Na have shallower acceptor energy levels. Compared with Li, Na is less likely to form interstitial Na, and H is less likely to passivate Na acceptors. Therefore, Na is a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/06
Inventor 叶志镇林时胜赵炳辉何海平陈凌翔顾修全黄靖云
Owner ZHEJIANG UNIV
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