Beam detecting member and beam detector using it

A technology for detecting components and detectors, applied in radiation measurement, X/γ/cosmic radiation measurement, instruments, etc., can solve problems such as not being able to fully function, not being able to capture changes in cross-sectional distribution, not being able to radiate beam positions, etc.

Inactive Publication Date: 2009-03-25
KOBE STEEL LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] In other words, not only the position of the beam cannot be accurately estimated, but also there is a problem that the change in the cross-sectional distribution cannot be captured
In addition, if the radiation beam deviates greatly

Method used

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  • Beam detecting member and beam detector using it
  • Beam detecting member and beam detector using it
  • Beam detecting member and beam detector using it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0100] Made by the following process figure 1 , 2 The beam detection member 2 is shown. First, a silicon substrate with a diameter of 1 inch is subjected to ultrasonic waves in an ethanol-turbid solution of diamond powder having a diameter of several 10 μm, thereby performing a treatment to promote nucleation. After rinsing the diamond powder adhering to the substrate, the silicon substrate was set in a microwave plasma CVD apparatus to form a diamond film. As the source gas, a mixed gas of 1 vol % methane and 99 vol % hydrogen was used. The gas pressure was set to 45 Torr, and the substrate temperature was set to 800°C.

[0101] In order to mix Si into the above-mentioned polycrystalline diamond film, silane (SiH 4 ) or disilane (Si 2 h 6 ), the silicon wafer is arranged laterally along the silicon substrate. As a result, it took 8 to 30 hours to form a polycrystalline diamond film with a thickness of 10 to 40 μm. It was confirmed that 5 to 50 ppm of Si atoms permeat...

Embodiment 2

[0105] Boron-doped diamond was produced by the same process as in Example 1. In order to dope boron in the polycrystalline diamond film, diborane (B 2 h 6 ) or trimethylboron (B(CH 3 ) 3 ), boric acid is arranged laterally along the silicon substrate (B 2 o 3 )piece. As a result, a polycrystalline diamond film having a thickness of 15 to 48 μm was obtained by forming the film for 20 to 75 hours. The film is doped with 1 to 100 ppm of B atoms.

[0106] Using this boron-doped diamond sample, a part of the silicon substrate was etched in the same manner as in Example 1 to fabricate a beam detection member. When such a beam detection member was irradiated with an X-ray beam having an energy of 15 keV, cyan light emission was observed from the polycrystalline diamond film region at the irradiated position. In addition, when observation is performed after changing the dose of the irradiated X-ray beam, as shown in FIG. 7 , the brightness of the irradiated position is changed...

Embodiment 3

[0108] In the same manner as in Example 1, a polycrystalline diamond film in which Si, N, Li, Be, B, P, and S were mixed was synthesized in the polycrystalline diamond film constituting the beam detecting member. When these elements are doped into the polycrystalline diamond film, visible light to ultraviolet light emitted from the irradiation position can be confirmed by the energy of the emitted light. However, as shown in Table 1, the emission spectrum varies greatly depending on the type and concentration of the added elements.

[0109] Table 1

[0110] add element Addition method of elements in diamond film Luminous wavelength(nm) Si Add SiH to raw gas 4 or Si 2 h 6 516～539、738 N Add N to raw gas 2 or NH 3 389、415、516～539、575 Li Implanted Li ions 438 be Arrangement of metal Be on the substrate support table 516～539 B Add B to raw gas 2 h 6 443、516～539 P Add PH to raw gas 3 230、516～539 S Add H to the...

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Abstract

A beam detector and a beam monitor using the same are provided, the beam detector being capable of precisely and stably detecting, for a long period of time, the position, the intensity distribution, and the change with time of radiation beams, soft x-ray beams, and the like and being manufactured at a low cost as compared to that of a conventional detection device. In a beam detector 2 for detecting the position and intensity of beams, a beam irradiation portion 6 to be irradiated with beams 7 is formed of a polycrystalline diamond (C) film 4 containing at least one element (X) selected from the group consisting of silicon (Si), nitrogen (N), lithium (Li), beryllium (Be), boron (B), phosphorus (P), sulfur (S), nickel (Ni), and vanadium (V) at an X/C of 0.1 to 1,000 ppm, and this polycrystalline diamond film 4 has a light emission function of performing light emissions 8 and 8a when it is irradiated with the beams 7. By the beam detector 2 as described above and light emission observation means 3 and 3a for observing the above light emission phenomenon, a beam monitor 1 is formed.

Description

technical field [0001] The present invention relates to a beam detection member and a beam detector using the same, which irradiate a beam irradiation unit with a beam such as high-energy radiation generated by a synchrotron radiation device or the like, and perform detection of the beam light. Detection of position and intensity, etc. Background technique [0002] In recent years, in research and development in the fields of medicine, materials, electronics, etc., synchrotron radiation optical devices and the like that generate beams of ultraviolet rays to X-rays have been widely used. Such beams are invisible to the naked eye, so it is difficult to accurately measure the position of such beams, and adjustment of the optical system is difficult. [0003] In addition, since the energy of the radiated light is high, there is a risk of erroneously irradiating non-irradiated subjects and experimenters with high-energy light, and indirectly irradiating a large amount of X-rays ...

Claims

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Application Information

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IPC IPC(8): C09K11/65C01B31/06C09K11/00C23C16/27G01T1/202G01T1/29
Inventor 小桥宏司橘武史横田嘉宏林和志
Owner KOBE STEEL LTD
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