Method for preparing ZrO2 compound film on surface of monocrystalline silicon wafer

Abstract

The invention provides a method for preparing ZrO2 composite film on the surface of a monocrystalline silicon slice, which comprises the following steps: soaking the monocrystalline silicon slice in aqua fortis to be heated for 5 to 6 hours; taking out the monocrystalline silicon slice, cleaning the monocrystalline silicon slice by using deionized water, and drying the monocrystalline silicon slice; immersing the monocrystalline silicon slice in solution of which the volume ratio of H2SO4 to H2O2 is 70 to 30 to be treated for 1 hour at room temperature; immersing the monocrystalline silicon slice in the prepared mercaptosilane solution after cleaning and drying, and taking out the monocrystalline silicon slice after the mixture is kept standing for 6 to 8 hours; blowing the monocrystalline silicon slice by using nitrogen after cleaning; and placing the monocrystalline silicon slice in salpeter solution with mass concentration of between 30 and 60 percent to react for 2 hours at a temperature of between 50 and 80 DEG C so as to oxidize terminated mercapto to sulfonic group in situ; finally, immersing the monocrystalline silicon slice in the prepared ZrO2 suspending liquid to be kept stand for 2 to 24 hours at a temperature of between 20 and 60 DEG C; and taking out and cleaning the monocrystalline silicon slice, and blowing the monocrystalline silicon slice by using the nitrogen to obtain the monocrystalline silicon slice of which the ZrO2 composite film is deposited on the surface. The method can reduce the friction coefficient from 0.8 of no film to 0.1, thereby having obvious antifriction function.

Description

technical field [0001] The invention relates to a method for preparing ZrO on the surface of a single crystal silicon wafer 2 Composite film method. Background technique [0002] With the advancement of high technology, the machinery manufacturing industry is developing in the direction of miniaturization, which involves the tribological problems of the surface of micro-machines. Due to the advantages of high hardness, low cost and small surface roughness of silicon material, the application in MEMS has been paid more and more attention. However, silicon materials without surface treatment are highly brittle, and surface cracks are prone to delamination wear and brittle fracture under low tensile stress, which is difficult to meet the requirements of use. Therefore, surface modification technology is required to improve the surface micromechanical properties of silicon materials. To improve the microscopic friction and wear properties of silicon materials. At present, a s...

AI Technical Summary

Problems solved by technology

[0005] The invention discloses a method for preparing ZrO on the surface of a single crystal silicon chip 2 The method of the composite thin film, its purpose is to aim at the high brittleness of the silicon material without surface treatment in the prior art, and the surface cracks are prone to delamination wear and brittle fracture under the action of low tensile stress, and the self-assembled ultra-thin polymer film is adopted The disadvantages of the preparation method are cumbersome process and long heat treatment time