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Resist film peeling method, mask blank manufacturing method and transfer mask manufacturing method

A technology of resist film and mask substrate, which is applied in the photolithographic process of patterned surface, semiconductor/solid-state device manufacturing, photolithographic process coating equipment, etc., and can solve problems such as high reactivity, pattern defects, residues, etc.

Active Publication Date: 2009-05-27
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this method has high reactivity, it is impossible to remove only the resist film while leaving the base film formed under the resist film in a reusable state.
[0015] In particular, with regard to the above-mentioned problems, when the resist film is peeled off from the mask substrate on which the film for transfer pattern and the resist film to be the transfer pattern are formed on the substrate, if the surface of the film for transfer pattern as the base is damaged damage (damage), optical characteristics (reflectivity, transmittance) change, then use this mask substrate to make a transfer mask, when using this transfer mask to manufacture semiconductor devices and liquid crystal devices, pattern defects will be caused, and the problem becomes deeper

Method used

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  • Resist film peeling method, mask blank manufacturing method and transfer mask manufacturing method
  • Resist film peeling method, mask blank manufacturing method and transfer mask manufacturing method
  • Resist film peeling method, mask blank manufacturing method and transfer mask manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0081] Next, the present invention will be described in more detail based on examples. In this embodiment, the above-described resist film stripping method 2 is employed. That is, if figure 1 As shown in (c), when the resist film 14 is found to be defective after making the mask blank 1, or when the sensitivity of the resist film 14 changes greatly due to long-term storage in the state of the mask blank 1, the following steps are performed: deal with:

[0082] 1st treatment: treatment with developer containing amine

[0083] Second treatment: Ozone water treatment

[0084] The third treatment: hydrogen water treatment. Here, the ozone water treatment of the 2nd treatment is carried out under the following conditions:

[0085] Ozone water concentration: 30, 70, 90, 110ppm

[0086] Processing temperature: room temperature, 25, 30, 35°C

[0087] Processing time: 1, 2, 3, 5, 7, 10 minutes. The reflectance of the light-shielding film 12 after peeling off the resist film 14 ...

Embodiment 2

[0093] On a light-transmitting substrate made of synthetic quartz glass whose main surface and end surfaces are precisely ground, use an in-line sputtering device, use a chromium target as a sputtering target, and perform sputtering in a mixed gas atmosphere of argon, nitrogen, and oxygen. Reactive sputtering, forming a light-shielding film, coating a chemically amplified resist, and making a photomask substrate.

[0094] When it is found that there is a defect in the resist film after making the mask blank 1 by the above-mentioned method, or when the sensitivity of the resist film 14 changes greatly due to long-term storage in the state of the mask blank 1, the following treatments are carried out:

[0095] 1st treatment: developer solution treatment containing amines

[0096] Second treatment: Ozone water treatment

[0097] The third treatment: hydrogen water treatment. In addition, according to the Rutherford backscattering analysis method (RBS), it is known that an antir...

Embodiment 3

[0103] On a light-transmitting substrate made of synthetic quartz glass whose main surface and end surfaces are precisely ground, use an in-line sputtering device, use a chromium target as a sputtering target, and perform sputtering in a mixed gas atmosphere of argon, nitrogen, and oxygen. reactive sputtering.

[0104] Then, on the light-shielding chromium film 12, using a mixed target material of molybdenum (Mo) and silicon (Si) (Mo:Si=20:80 [mol%]), in argon (Ar) and nitrogen (N 2 ) mixed gas atmosphere (Ar:N 2 =10: 90 [volume %], pressure 0.3 [Pa]), the film for hard masks which consists of MoSiN was formed by performing reactive sputtering.

[0105] Then, a chemically amplified resist is applied on the inorganic etching mask film 3 to prepare a photomask blank.

[0106] After making the mask blank by the above-mentioned method, when it is found that the resist film is defective or when the sensitivity of the resist film 14 changes greatly due to long-term storage in the ...

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Abstract

Provided is a resist film peeling method wherein a mask blank having a transfer pattern thin film to be a transfer pattern and a resist film formed on a substrate is used and the transfer pattern thin film and the substrate are permitted to be reused by peeling only the resist film. A mask blank manufacturing method and a transfer mask manufacturing method are also provided. In a mask blank (1), a light blocking film (12) and a resist film (14) prior to exposure and development are formed on a substrate (11). When troubles as having much thickness nonuniformity of the resist film (14) are generated or when sensitivity of the resist film (14) is changed due to long-term storage in a state of the mask blank (1), ozone water treatment is performed to peel the resist film (14) by bringing the resist film (14) into contact with ozone water. Then, the resist film (14) is formed again, and the substrate (11) and the light blocking film (12) are reused.

Description

technical field [0001] The present invention relates to a resist film peeling method for peeling a resist film from a mask substrate having a resist film formed on a thin film for transferring a pattern, a method for manufacturing a mask substrate, and manufacture of a transfer mask method. Background technique [0002] In the manufacture of semiconductor devices and liquid crystal devices, etc., in the process of patterning a base film formed of metal or metal compound by photolithography, after applying a resist on the surface of the base film, the resist is coated with a transfer mask. After exposure, the resist is developed with a developer to form a resist pattern, and the base film is etched using the resist pattern as a mask. Then, the resist pattern is removed with a stripper. [0003] In addition, when making the transfer mask, a transfer layer formed of metal (such as chromium) or metal oxide (such as chromium containing at least any chromium compound selected fr...

Claims

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Application Information

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IPC IPC(8): H01L21/027G03F1/08H01L21/304G03F1/00G03F1/46
CPCG03F1/46G03F1/14G03F7/16G03F7/42G03F1/62G03F7/422G03F7/70025H01L21/0332
Inventor 堀井克彦浅川敬司
Owner HOYA CORP