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Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting

A solar cell, double-sided passivation technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high cost of magnetron sputtering, slow laser melting of A1 electrodes, and difficulty in large-scale production. Effects of rear recombination rate, open-circuit voltage and short-circuit current improvement, and conversion efficiency improvement

Inactive Publication Date: 2009-06-03
上海晶澳太阳能光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This technology has made great progress compared with photolithography, but it is still difficult to transform into large-scale production, mainly due to the high cost of magnetron sputtering and the slow speed of laser ablation of the A1 electrode.

Method used

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  • Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting
  • Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting
  • Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Such as image 3 As shown, a single-layer silicon nitride film is used for double-sided passivation, and the laser is quickly opened on the back to open the window, and then the electrode is prepared by screen printing. The process is as follows:

[0022] 1. Chemical etching removes the damaged layer on the surface of the silicon wafer, prepares the suede structure and performs pre-cleaning before diffusion.

[0023] 2. Phosphorus diffuses to form a p-n junction. For conventional tubular diffusion, silicon wafers are used back-to-back, in POCl 3 One-sided diffusion in atmosphere. For chain diffusion, the silicon wafer is sprayed with phosphorus source on one side, followed by rapid diffusion. But even for single-side doping, there will always be a part of the p-n junction on the back of the silicon wafer, which is due to the evaporation of the phosphorus source during the diffusion process.

[0024] 3. Remove edges and back knots. For back passivation and back ele...

Embodiment 2

[0030] Such as Figure 4As shown, a single-layer silicon nitride film is used for passivation and anti-reflection on the front surface, and a single-layer silicon nitride film, silicon oxide film, amorphous silicon film or microcrystalline silicon film can be used for rear surface passivation, and then the laser is used on the rear surface The window is quickly opened, and then the electrode is prepared by magnetron sputtering. The process is as follows:

[0031] 1. Chemical etching removes the damaged layer on the surface of the silicon wafer, prepares the suede structure and performs pre-cleaning before diffusion.

[0032] 2. Phosphorus diffuses to form a p-n junction.

[0033] 3. Remove edges and back knots.

[0034] 4. Perform double-sided passivation. The front surface adopts PECVD or PVD to deposit silicon nitride film for passivation and anti-reflection, and the back surface passivation adopts silicon nitride film, silicon oxide film, amorphous silicon film or micro...

Embodiment 3

[0040] Such as Figure 5 As shown, the double-sided double-layer passivation method is adopted. The front and rear surfaces of the silicon wafer are laminated with silicon nitride / silicon oxide films, and then the laser is quickly opened on the back to open the window, and then the electrode is prepared by screen printing. The process is as follows:

[0041] 1. Chemical etching removes the damaged layer on the surface of the silicon wafer, prepares the suede structure and performs pre-cleaning before diffusion.

[0042] 2. Phosphorus diffuses to form a p-n junction.

[0043] 3. Remove edges and back knots.

[0044] 4. Double-sided double-layer passivation. Use thermal oxidation, PECVD or PVD to form silicon nitride / silicon oxide film stacks on the front and rear surfaces of silicon wafers to further improve the effects of passivation, anti-reflection, and internal reflection.

[0045] 5. Laser dotting, forming a large number of electrode local contact windows at the passiv...

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Abstract

The invention discloses a method for preparing an antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting. In the method, on the basis of a conventional crystalline silicon solar cell preparation process, both the front and the back surfaces of the solar cell are passivated; then a passivation layer on the back surface of the solar sell is quickly dotted by lasers, and then a back electrode local contact window is formed; and after screen printing or electrode magnetron sputtering, the antapex contact crystalline silicon solar cell with relative high efficiency is prepared. The method utilizes the technology of directly opening a passivation layer window by lasers, so that whether compared with traditional photolithography or a laser burning thawing aluminum electrode method, process steps, process time and preparation costs of the method are greatly reduced; screen printing and the mode of using magnetron sputtering to prepare back electrode adopted by the method are highly beneficial to mass production; and especially, screen printing has a low cost and a high output, and is consistent with the current production line, thereby profitably pushing the industrialization of screen printing.

Description

technical field [0001] The invention belongs to the field of solar cell manufacturing, and in particular relates to a preparation method of a crystalline silicon solar cell. Background technique [0002] Energy shortage and environmental degradation force countries around the world to actively seek green and renewable energy that can replace conventional energy. As an important part of renewable energy, photovoltaic power generation has achieved great development in recent years. In 2007, the global solar cell production reached 4.28GW, an increase of 69% over 2006, and the growth rate in 2008 was even greater. The development of China's photovoltaic industry was particularly strong. Notably, since 2007, the total output has ranked first in the world. However, compared with foreign advanced preparation technologies, my country's crystalline silicon solar cell preparation technology is still relatively backward. The basic process is as follows: figure 1 As shown, it is comp...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 陶龙忠邢国强
Owner 上海晶澳太阳能光伏科技有限公司
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