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AlN/GaN enhancement type metal-insulator-semiconductor field effect transistor and method of producing the same

A field effect transistor and manufacturing method technology, applied in the field of microelectronics, can solve the problems of large channel transmission resistance, small output current, large noise, etc., and achieve the effects of large threshold voltage, large output current, and high output current

Inactive Publication Date: 2009-06-24
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in some switching applications, due to the large noise, a threshold voltage of at least 5V is required, and the above method is difficult to achieve
[0017] 2. Although the threshold voltage of scheme 5 is very high, the output current is very small, and the channel transmission resistance is very large

Method used

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  • AlN/GaN enhancement type metal-insulator-semiconductor field effect transistor and method of producing the same
  • AlN/GaN enhancement type metal-insulator-semiconductor field effect transistor and method of producing the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Embodiment 1, fabricating an AlN / GaN enhanced metal-insulator-semiconductor field-effect transistor with an AlN barrier layer of 3nm thickness on a sapphire substrate, the steps are as follows:

[0053] In step 1, an AlN nucleation layer is grown on the sapphire substrate by MOCVD process.

[0054] (1a) Put the sapphire substrate into the reaction chamber of the metal-organic chemical vapor deposition MOCVD equipment, when the vacuum degree of the reaction chamber drops to 1×10 -2 After Torr, the sapphire substrate is subjected to high-temperature heat treatment and surface nitriding under the protection of a mixed gas of hydrogen and ammonia. The heating temperature is 1050°C, the heating time is 5min, and the reaction pressure is kept at 40Torr. The ammonia gas flow rate is 1500 sccm, and the hydrogen gas flow rate is 1500 sccm;

[0055] (1b) Lower the substrate temperature to 500° C., and grow an AlN nucleation layer with a thickness of 30 nm. The reaction pressure...

Embodiment 2

[0080] Embodiment 2, fabricating an AlN / GaN enhanced metal-insulator-semiconductor field effect transistor with an AlN barrier layer of 3.6nm thickness on a SiC substrate, the steps are as follows:

[0081] In step 1, an AlN nucleation layer is grown on the SiC substrate by using an MOCVD process.

[0082] (1a) Put the SiC substrate into the reaction chamber of the metal organic chemical vapor deposition MOCVD equipment, when the vacuum degree of the reaction chamber drops to 1×10 -2 After Torr, the sapphire substrate is subjected to high-temperature heat treatment and surface nitriding under the protection of a mixed gas of hydrogen and ammonia. The heating temperature is 1050°C, the heating time is 5min, and the reaction pressure is kept at 40Torr. The ammonia gas flow rate is 1500 sccm, and the hydrogen gas flow rate is 1500 sccm;

[0083] (1b) Lower the substrate temperature to 900° C., and grow an AlN nucleation layer with a thickness of 30 nm. The reaction pressure was...

Embodiment 3

[0108] Embodiment 3, making an AlN / GaN enhanced metal-insulator-semiconductor field-effect transistor with an AlN barrier layer of 3.3 nm thick on a sapphire substrate, the steps are as follows:

[0109] In step 1, an AlN nucleation layer is grown on the sapphire substrate by MOCVD process.

[0110] (1a) Put the sapphire substrate into the reaction chamber of the metal-organic chemical vapor deposition MOCVD equipment, when the vacuum degree of the reaction chamber drops to 1×10 -2 After Torr, the sapphire substrate is subjected to high-temperature heat treatment and surface nitriding under the protection of a mixed gas of hydrogen and ammonia. The heating temperature is 1050°C, the heating time is 5min, and the reaction pressure is kept at 40Torr. The ammonia gas flow rate is 1500 sccm, and the hydrogen gas flow rate is 1500 sccm;

[0111] (1b) Lower the substrate temperature to 500° C., and grow an AlN nucleation layer with a thickness of 30 nm. The reaction pressure was k...

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Abstract

The invention discloses an AIN / GaN reinforced metal-insulator-semiconductor field effect transistor, mainly solving the problem that high-threshold voltage and large output current can not be realized at the same time in the existing device. The AIN / GaN reinforced metal-insulator-semiconductor field effect transistor is mainly characterized in that an AIN barrier layer is adopted to increase the concentration of channel two-dimensional electron gas and increase the output current at the time of high-threshold voltage. The manufacturing process comprises the following steps: growing an AIN nucleating layer on a substrate; growing an AI0.07GaN epitaxial layer on the AIN nucleating layer; growing a GaN layer on the AI0.07GaN epitaxial layer; growing an AIN barrier layer with a thickness of 3-6nm on the GaN layer; after the completion of material growing, photo-etching and vaporizing source-drain metals on the AIN barrier layer; photo-etching and etching a grooved gate between the source and the drain; after the grooved gate is etched, depositing SiN gate dielectric layers on the surfaces of the grooved gate and the AIN barrier layer; and photo-etching and vaporizing gate metals on the SiN gate dielectric layers and interconnecting the metals. The invention is applicable to the production of switch devices with high-threshold voltage and small transmission resistance.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a structure and a realization method of an AlN / GaN enhanced metal-insulator-semiconductor field effect transistor, which is mainly used as a switching device requiring a large threshold voltage. Background technique [0002] GaN-based materials can be used to manufacture high-temperature, high-frequency and high-power electronic devices due to their advantages of large band gap, high electron saturation drift velocity, high breakdown field strength and good thermal conductivity. At the same time, due to the inherent polarization characteristics of GaN-based materials, the AlGaN / G aN heterojunction itself has a high-concentration two-dimensional electron gas channel, which makes the AlGaN / GaN heterojunction high electron mobility transistor suitable for high-temperature devices and High-power microwave devices have shown obvious advan...

Claims

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Application Information

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IPC IPC(8): H01L29/778H01L29/78H01L29/205H01L21/336
Inventor 郝跃全思马晓华杨凌谢元斌
Owner XIDIAN UNIV
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