Method for preparing high-purity silicon by high temperature gas-solid reaction

A solid reaction, high-purity technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of high energy consumption and long process, and achieve simple impurity removal process, low environmental pressure, and low power consumption Effect

Active Publication Date: 2009-07-15
晶海洋半导体材料(东海)有限公司 +1
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] There are many existing methods for directly purifying industrial silicon into higher-purity silicon, which can be summarized as acid leaching (also known as pickling) and oxidation refining. For example, the invention patent with application number 200710066017. , Crushing, ball milling, screening, preliminary impurity removal and other processes, put it into ultrasonic and microwave fields for metallurgical acid leaching treatment, and the metallurgical grade silicon powder after intensive treatment is combined with atmospheric pressure wet leaching and high temperature and high pressure leaching, The metal impurities in metallurgical grade silicon powder can enter the leaching solution as soon as possible. This method effectively improv

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing high-purity silicon by high temperature gas-solid reaction
  • Method for preparing high-purity silicon by high temperature gas-solid reaction
  • Method for preparing high-purity silicon by high temperature gas-solid reaction

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0032] Example 1

[0033] Using industrial silicon with a purity of 95%-99.99% as raw material, the main impurity component Fe content is 2731ppmw, Al content is 1472ppmw, Ca content is 191ppmw, and Cu content is 59ppmw.

[0034] Preliminarily crush and sieve the raw materials, take a sample with a particle size of 5±1mm, put it on the hearth of the high-temperature solid-phase reaction furnace with a mesh structure, and evacuate it to 1.0×10 -2 Pa to remove the air in the furnace, after inert gas replacement, the inert gas is any one or a mixture of helium, neon, argon, etc., the sample is heated to 1380 ° C, filled with hydrogen, chlorine, fluorine gas , hydrogen chloride, hydrogen fluoride, bromine or hydrogen bromide as active gas, adjust the vacuum to 0.8 × 10 3 Pa is subjected to gas-solid reaction treatment, and the treatment time is 1h, 2h, 4h, 8h and 12h respectively, and any one of hydrochloric acid, hydrofluoric acid, nitric acid or perchloric acid is used to clean...

Example Embodiment

[0036] Example 2

[0037] Using industrial silicon with a purity of 95%-99.99% as raw material, the main impurity component Fe content is 2731ppmw, Al content is 1472ppmw, Ca content is 191ppmw, and Cu content is 59ppmw.

[0038] Preliminarily crush and sieve the raw materials, take a sample with a particle size of 10±1mm, put it into a high-temperature solid-phase reaction furnace with a hole-shaped hearth, and evacuate it to 1.0×10 -3 Pa to remove the air in the furnace, after inert gas replacement, the inert gas is any one or a mixture of helium, neon, argon, etc., the sample is heated to 1380 ° C, filled with hydrogen, chlorine, fluorine gas , hydrogen chloride, hydrogen fluoride, bromine or hydrogen bromide as active gas, adjust the vacuum to 0.8×10 4 Pa is subjected to gas-solid reaction treatment, and the treatment time is 1h, 2h, 4h, 8h and 12h, respectively. After washing, washing with water and drying, high-purity silicon with a purity higher than 99.999% is obtain...

Example Embodiment

[0040] Example 3

[0041]Using industrial silicon with a purity of 95%-99.99% as raw material, the main impurity component Fe content is 2731ppmw, Al content is 1472ppmw, Ca content is 191ppmw, and Cu content is 59ppmw.

[0042] Preliminarily crush and sieve the raw materials, take a sample with a particle size of 30±1mm, put it into a high-temperature solid-phase reaction furnace with a mesh-like structure, and evacuate it to 1.0×10 -4 Pa to remove the air in the furnace, after inert gas replacement, the inert gas is any one or a mixture of helium, neon, argon, etc., the sample is heated to 1380 ° C, filled with hydrogen, chlorine, fluorine gas , hydrogen chloride, hydrogen fluoride, bromine or hydrogen bromide as active gas, adjust the vacuum to 1.3 × 10 5 Pa, carry out gas-solid reaction treatment, the treatment time is 1h, 2h, 4h, 8h, 12h and 24h and 36h (not shown in the figure), the silicon material after the gas-solid reaction is treated with hydrochloric acid, hydrofl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for preparing high-purity silicon by using high temperature gas-solid reaction, which comprises the following steps: (1) taking low-purity silicon to be crushed, and then screening the low-purity silicon; (2) putting crushed silicon material into a high temperature solid phase reaction furnace, vacuumizing to be between 1.0*10 and 1.0*10Pa so as to remove most part of air inside the furnace, using inert gases to permute so as to remove air inside the furnace, increasing the temperature of the silicon material to be between 800 and 1412 DEG C, and charging active gases to perform the gas-solid reaction; and (3) cleaning the silicon material treated through the step (2) and obtaining the high-purity silicon product. The invention prepares the high-purity silicon by the gas-solid reaction, has high production efficiency, small investment on equipment, low energy consumption is low, great productivity, little influence on the environment, low cost, and high product purity, and can be further used for prepare the high-purity silicon used in the solar energy battery industry.

Description

technical field [0001] The invention belongs to the technical field of metal silicon purification, and in particular relates to a method for preparing high-purity silicon by utilizing high-temperature gas-solid reaction. Background technique [0002] In today's situation of increasingly tense energy and increasing environmental pressure, renewable energy has been paid more and more attention by governments of various countries. As an important renewable energy, solar energy, its development and utilization has become an important part of the sustainable development strategy of various countries. . At present, my country's renewable energy scale is only 8%, and the future development space is very broad. As the energy source with the most potential in the 21st century, the solar energy industry has made considerable progress in research and development, industrialization, and market development. The solar cell industry has also become one of the fastest and steadily developi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B33/037
Inventor 黄新明张永欣邝亚镭郭宽新
Owner 晶海洋半导体材料(东海)有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap