Metalization hatch method for cadmium telluride passivating film of mercury cadmium telluride infrared detecting chip

A technology of infrared detection and mercury cadmium telluride, which is applied in metal material coating technology, electrical components, climate sustainability, etc., can solve the problems of increasing process steps, difficult to control the end of metallization opening, and limiting surface treatment options

Inactive Publication Date: 2009-07-29
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0004] However, the use of CdTe passivated HgCdTe infrared detection chips will encounter technical difficulties in metallization openings
This is because the physical and chemical properties of CdTe and HgCdTe are very similar, neither conventional bromine-based wet chemical etching nor induced coupled plasma (ICP) dry etching has high selectivity, and it is difficult to control the end of the metallization opening; Although the metallization opening technology for opening electrode holes can avoid the disadvantage of difficult control of the corrosion end point, the additional chip photolithography before passivation not only increases the process steps, but also greatly limits the surface treatment options before passivation

Method used

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  • Metalization hatch method for cadmium telluride passivating film of mercury cadmium telluride infrared detecting chip
  • Metalization hatch method for cadmium telluride passivating film of mercury cadmium telluride infrared detecting chip
  • Metalization hatch method for cadmium telluride passivating film of mercury cadmium telluride infrared detecting chip

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Embodiment Construction

[0023] The specific implementation of the present invention is described further below:

[0024] Take the metallized opening of a CdTe / ZnS bilayer passivated sample as an example. The passivation films of the samples were all grown by electron beam evaporation, and the growth rate was The final growth thickness shows CdTe All kinds of chemistry are of MOS grade, and the solution is prepared using a bottle-top pipette with an accuracy of 0.1ml, and the required dose is directly measured from the reagent bottle.

[0025] The specific implementation steps are as follows:

[0026] A. First place a clean Petri dish and filter paper on the electronic balance, and zero the displayed mass. Align the mouth of the reagent bottle containing potassium dichromate with the filter paper at the side and down, and the light body of the bottle allows the reagent to fall evenly into the petri dish lined with filter paper. until the desired dose is reached.

[0027] B. Place the fluoroplas...

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Abstract

The invention discloses a metalized opening method of a mercury cadmium telluride passive film in a mercury cadmium telluride infrared detection chip. The method relates to a preparation technology of an HgCdTe infrared focal plane detector, in particular comprising the preparation of a selective etching solution of a CdTe passive film of the HgCdTe detection chip and a method for using the etching solution to carry out the metalized opening of the detector chip. The result shows that the etching solution has a high etching selective ration on CdTe and HgCdTe materials, and is stable with controllable etching speed. The opening method is a stable and convenient technology, has no effect on other surface treatment technologies, facilitates the improvement of surface properties of a device, improves technological stability and is vital to realize the application of CdTe passivation to a focal plane device.

Description

technical field [0001] The present invention relates to the preparation technology of mercury cadmium telluride (HgCdTe) infrared focal plane detector, specifically including the preparation of HgCdTe detection chip cadmium telluride (CdTe) passivation film selective corrosion solution and using the corrosion solution to metallize the detector chip The way to speak. Background technique [0002] As a semiconductor device with a narrow band gap, the fixed charge on the surface of the mercury cadmium telluride infrared focal plane detection chip will cause an energy band bending of one or several orders of magnitude of the band gap, resulting in serious accumulation, depletion or inversion on the surface, and then Significantly degrades the performance of infrared detectors. Therefore, in order to obtain a band structure close to a flat band, the HgCdTe infrared focal plane detection chip needs to be effectively surface passivated. [0003] Due to the lattice matching of CdT...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0224C23C22/34
CPCY02P70/50
Inventor 邓屹陈新强陈兴国林春叶振华胡晓宁
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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