Preparation method of CuInxGa1-xSe2 powder

A technology of powder materials and raw materials, which is applied in the field of preparation of CuInxGa1-xSe2 powder materials, can solve the problems of difficult film phase stoichiometric ratio control and segregation control, large film performance differences, small film forming area, etc., to achieve improved Synthetic efficiency, low manufacturing cost, and simple process

Inactive Publication Date: 2009-09-16
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to CuIn x Ga 1-x Se 2 (CIGS) can form ordered defect compounds (OVC) in a wide range of stoichiometric ratios (molar ratios) [1] , making the stoichiometric ratio control and segregation control of the thin film phase more difficult, large-scale production of thin film performance differences, poor repeatability, small film forming area and other issues are huge challenges for commercial development
[0003] Currently, Cu(In,Ga)Se for solar cells 2 co-evaporation [2] and sputter selenization [3] Preparation, this method can control the precise metering ratio, but the film forming area is small, and high vacuum is required, and the equipment investment is large

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] CuIn x Ga 1-x Se 2 The preparation method of powder materials, using self-propagating high-temperature synthesis technology to prepare CuIn x Ga 1-x Se 2 Compound, it comprises the steps:

[0025] 1) Selection of raw materials: according to the molar ratio, Cu powder: In powder: Ga powder: Se powder = 1: 0.7: 0.3: 2.1 Weigh Cu powder, In powder, Ga powder and Se powder, set aside; Cu powder, In powder The purity of Cu powder, Ga powder and Se powder are all 99.9% (mass), the maximum particle size of Cu powder and Se powder is 5 μm, and the maximum particle size of In powder and Ga powder is 2 μm;

[0026] 2), mixing: uniformly mix Cu powder, In powder, Ga powder and Se powder (dry mixing), and the mixing time is 24 hours to obtain a reaction mixture;

[0027] 3), forming: adopting axial compression molding, the reaction mixture is pressed into a circular green body in a steel mold, and the molding pressure is 5MPa to obtain a mixture green body;

[0028] 4), synt...

Embodiment 2

[0032] CuIn x Ga 1-x Se 2 The preparation method of powder materials, using self-propagating high-temperature synthesis technology to prepare CuIn x Ga 1-x Se 2 Compound, it comprises the steps:

[0033]1) Selection of raw materials: According to the molar ratio, Cu powder: In powder: Ga powder: Se powder = 1: 0.7: 0.3: 2.3 Weigh Cu powder, In powder, Ga powder and Se powder, set aside; Cu powder, In powder The purity of Cu powder, Ga powder and Se powder are all 99.99% (mass), the maximum particle diameter of Cu powder and Se powder is 4 μm, and the maximum particle diameter of In powder and Ga powder is 1 μm;

[0034] 2), mixing: uniformly mix Cu powder, In powder, Ga powder and Se powder (dry mixing), and the mixing time is 30 hours to obtain a reaction mixture;

[0035] 3), forming: adopting axial compression molding, the reaction mixture is pressed into a circular green body in a steel mold, and the molding pressure is 5MPa to obtain a mixture green body;

[0036] ...

Embodiment 3

[0040] CuIn x Ga 1-x Se 2 The preparation method of powder materials, using self-propagating high-temperature synthesis technology to prepare CuIn x Ga 1-x Se 2 Compound, it comprises the steps:

[0041] 1) Selection of raw materials: According to the molar ratio, Cu powder: In powder: Ga powder: Se powder = 1: 0.7: 0.3: 2.5 Weigh Cu powder, In powder, Ga powder and Se powder, set aside; Cu powder, In powder The purity of Cu powder, Ga powder and Se powder are all 99.99% (mass), the maximum particle diameter of Cu powder and Se powder is 4 μm, and the maximum particle diameter of In powder and Ga powder is 1 μm;

[0042] 2), mixing: uniformly mix Cu powder, In powder, Ga powder and Se powder (dry mixing), and the mixing time is 48 hours to obtain a reaction mixture;

[0043] 3), forming: adopting axial compression molding, the reaction mixture is pressed into a circular green body in a steel mold, and the molding pressure is 5MPa to obtain a mixture green body;

[0044]...

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Abstract

The invention relates to a preparation method of CuInxGa1-xSe2 powder which is material of absorption layer material of film solar battery, characterized in that the method comprises the following steps: step 1) of selecting raw materials: weighing Cu powder, In powder, Ga powder and Se powder according to molar ratio of 1:0.7:0.3:(2.1-2.5); step 2) of mixing; step 3) of molding to shape so as to obtain a mixture billet; step 4) of synthesizing: adopting self-propagating high-temperature synthesis, switching on power of igniting tungsten filament under condition of argon atmosphere at 0.1-0.6MPa, igniting the mixture billet to carry out self-propagating high-temperature synthesizing reaction at synthesizing reaction speed of 2-3mm / s; after the reaction, cooling in the furnace, ball milling to obtain the CuInxGa1-xSe2 powder. The preparation method has the features of short preparation time, stable stoichiometric proportion, controllable stoichiometric proportion of product, simple process, high production efficiency and low cost.

Description

technical field [0001] The present invention relates to thin-film solar cell absorption layer material CuIn x Ga 1-x Se 2 Preparation method of powder material. Background technique [0002] The energy shortage has risen to the level that affects the strategic decisions of countries all over the world. It is a very attractive way to directly and effectively use solar energy. CIGS thin-film solar cells have become the research topic of various countries because of their high efficiency, stable performance, and large-area film formation. hotspot. Due to CuIn x Ga 1-x Se 2 (CIGS) can form ordered defect compounds (OVC) in a wide range of stoichiometric ratios (molar ratios) [1] , making the stoichiometric ratio control and segregation control of the thin film phase more difficult, large-scale film performance differences, poor repeatability, and small film forming area in large-scale production are huge challenges for commercial development. [0003] Currently, Cu(In,Ga...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/626C04B35/515H01L31/18
CPCY02P70/50
Inventor 王为民傅正义周其刚王皓
Owner WUHAN UNIV OF TECH
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