Unlock instant, AI-driven research and patent intelligence for your innovation.

Metal nitride electrode material for dye-sensitized solar cell

A technology of solar cells and dye sensitization, which is applied in the field of metal nitride electrode materials for dye-sensitized solar cells, can solve the problems of expensive platinum and high manufacturing costs of electrodes, and achieve small surface resistance, long service life and high stability Effect

Inactive Publication Date: 2011-05-25
NANKAI UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the rarity and high cost of platinum, this type of electrode has a high manufacturing cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Metal nitride electrode material for dye-sensitized solar cell
  • Metal nitride electrode material for dye-sensitized solar cell
  • Metal nitride electrode material for dye-sensitized solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] The preparation of embodiment 1 nickel nitride nanoparticle film electrode material, the steps are as follows:

[0017] 1) the nickel oxide nanoparticle slurry is made into a porous film with a thickness of 8 microns by screen printing;

[0018] 2) Put the nickel oxide film in a tube furnace with flowing ammonia gas, and nitriding it for 1 hour at a temperature of 400° C. to 450° C. to prepare a nickel nitride porous electrode material.

[0019] The prepared nickel nitride porous electrode material was used for figure 1 The counter electrode of the dye-sensitized solar cell shown, its photocurrent-voltage curve is measured as figure 2 It is shown that it has good electrochemical performance.

Embodiment 2

[0020] Embodiment 2 The preparation of iron nitride nanoparticle thin film electrode material, the steps are as follows:

[0021] 1) The iron oxide nanoparticle slurry is made into a porous film with a thickness of 18 microns by spraying;

[0022] 2) placing the iron oxide film in a tube furnace with flowing nitrogen gas, and nitriding it for 1 hour at a temperature of 400-450° C. to prepare an iron nitride electrode material.

[0023] The prepared iron nitride electrode material was used for figure 1 The counter electrode of the dye-sensitized solar cell shown, its photocurrent-voltage curve is measured as image 3 It is shown that it has good electrochemical performance.

Embodiment 3

[0024] Embodiment 3 The preparation of cobalt nitride nanoparticle thin film electrode material, the steps are as follows:

[0025] 1) the cobalt oxide nanoparticle slurry is made into a porous film with a thickness of 38 microns by scraping;

[0026] 2) Place the cobalt oxide film in a tube furnace with flowing hydrazine, and nitride it for 1 hour at a temperature of 450° C. to prepare a cobalt nitride porous electrode material.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a metal nitride electrode material for a dye-sensitized solar cell, which takes a simple substance or a compound of a transition element as a precursor and is prepared by nitridation reaction; gases used in the nitridation reaction are ammonia, nitrogen, hydrazine or hydrogen and nitrogen gas mixture; the temperature of the nitridation reaction is 400-900DEG C; and the time for the nitridation reaction is 1 hour. The invention has the advantages that: the electrode material prepared by the method is multiaperture and has very small surface resistance, has comparatively large effective contact surface with the liquid electrolyte in the dye-sensitized solar cell, and has more active reaction centers; in addition, the electrode material has high stability, good mechanical capacity, long service life, low production cost and excellent photoelectricity function, and can completely replace the platinum modified counter electrode with expensive use cost used by current dye-sensitized solar cell. The titanium nitride can not only be applicable to the dye-sensitized solar cell, but also can be used in other fields as a high catalytic activity electrochemistry electrode.

Description

technical field [0001] The invention relates to an electrode material for a dye-sensitized solar cell, in particular to a metal nitride electrode material for a dye-sensitized solar cell. Background technique [0002] Dye-sensitized nanocrystalline solar cells are a new type of chemical solar cells developed in the 1990s (B.O'Regan, M.Gratzel, A low-cost high-efficiency solar cell based on dye-sensitizedcolloidal TiO2 film., Nature 1991,353,737.), has lower cost, easy preparation process and good environmental compatibility, has good application prospect (P.V.Kamat, Meeting the Clean Energy Demand: Nanostructure Architectures for Solar Energy Conversion, J. Phys. Chem. C 2007, 111, 2834.). But at present in the dye-sensitized nanocrystalline solar cell, the counter electrode used is mainly the electrode (N.Papageorgiou, Counter-electrode function in nanocrystalline photoelectrochemical cell configurations , Coordin. Chem. Rev. 2004, 248, 1421.). Due to the rarity and hi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01G9/042H01G9/20H01M14/00C01B21/06C01B21/076
CPCY02E10/542Y02P70/50
Inventor 高学平姜奇伟李国然叶世海
Owner NANKAI UNIV