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Method of electroless nickel plating on silicon substrate microchannel

An electroless nickel electroplating and silicon microchannel technology, applied in microstructure technology, liquid chemical plating, microstructure devices, etc., can solve the problems of low toxicity and low cost, and achieve good crystalline state, low cost and low price. Effect

Inactive Publication Date: 2009-09-23
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

One of the key technologies of the 3D thin film battery is the fabrication of the nickel thin film current collection layer in the three-dimensional structure, which can obtain a thin metal layer by electroless deposition, and has low cost and low toxicity. Electroless deposition technology has been extensively studied, but the electroless deposition of nickel on silicon-based microchannel substrates of several microns is still a technical challenge

Method used

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  • Method of electroless nickel plating on silicon substrate microchannel
  • Method of electroless nickel plating on silicon substrate microchannel
  • Method of electroless nickel plating on silicon substrate microchannel

Examples

Experimental program
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Effect test

Embodiment 1

[0020] After the silicon microchannel sample is prepared, the prepared microchannel is immersed in an aqueous solution containing 1% TritonX-100 (polyethylene glycol octylphenyl ether) for 10 seconds. Nickel hexahydrate (NiSO 4 .6H 2 O) 1M / L, sodium dodecyl sulfate (Sodium dodecyl sulfate) 10mg, ammonium fluoride (NH 4 F) 2.5M / L, sodium citrate (Sodium citrate) 0.2M / L, ammoniacal liquor and ammonium sulfate 0.5M / L are configured into a solution, and the microchannel of step 1) is cleaned with deionized water and put into the solution, the solution Keep the pH value of the alkaline environment at 8, control the temperature at 85 degrees Celsius, and deposit for 5 minutes. After the deposition, take out the microchannel and rinse it with deionized water to obtain a 3D current collection layer with a high specific surface area.

Embodiment 2

[0022] After the silicon microchannel sample is prepared, the prepared microchannel is immersed in an aqueous solution containing 1% TritonX-100 (polyethylene glycol octylphenyl ether) for 30 seconds. Nickel hexahydrate (NiSO 4 .6H 2 O) 2M / L, sodium dodecyl sulfate (Sodium dodecyl sulfate) 20mg, ammonium fluoride (NH 4 F) 7.5M / L, sodium citrate (Sodium citrate) 0.4M / L, ammonia water and ammonium sulfate 1M / L are configured into a solution, and the microchannel in step 1) is washed with deionized water and put into the solution, and the solution remains alkaline The pH value of the active environment is 8, the temperature is controlled at 85 degrees Celsius, and the deposition is performed for 10 minutes. After the deposition, the microchannel is taken out and rinsed with deionized water to obtain a 3D current collection layer with a high specific surface area.

Embodiment 3

[0024] After the silicon microchannel sample is prepared, the prepared microchannel is immersed in an aqueous solution containing 1% TritonX-100 (polyethylene glycol octylphenyl ether) for 20 seconds. Nickel hexahydrate (NiSO 4 .6H 2 O) 1.5M / L, sodium dodecyl sulfate (Sodium dodecyl sulfate) 15mg, ammonium fluoride (NH 4 F) 5M / L, sodium citrate (Sodium citrate) 0.3M / L, ammonia water and ammonium sulfate 0.75M / L are configured into a solution, and the microchannel in step 1) is washed with deionized water and put into the solution, and the solution remains alkaline The pH value of the active environment is about 8.3, the temperature is controlled at 80 degrees Celsius, and the deposition is carried out for 8 minutes. After the deposition, the microchannel is taken out and rinsed with deionized water to obtain a 3D current collection layer with a high specific surface area.

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Abstract

The invention discloses a method of electroless nickel plating on silicon substrate microchannel, comprising the following steps: prepared microchannel is put into aqueous solution containing 1% of polyoxyethylene octyl phenyl ether to be soaked for 10-30 seconds; hexahydrated nickel, sodium dodecyl sulfate, fluorinated ammonia, sodium citrate, ammonia water and ammonium sulfate are prepared into solution; the microchannel in step 1 is washed by deionized water and put into the solution, alkaline condition of the solution is preserved at a pH value of 7.5-8.5, the temperature is controlled at 80-85 DEG C, and the solution is deposited for 5-10 minutes; the microchannel is taken out after the deposition and is washed by deionized water, thus obtaining 3D current collecting layer with high specific surface area. The electroless nickel deposition technology of the silicon substrate microchannel has the advantages of low cost, simple operation and easy realization; the microchannel has uniform porosity and comparatively large specific surface area and aspect ratio.

Description

technical field [0001] The invention relates to a method for electroless nickel plating on silicon-based microchannels, specifically an electroless plating solution formula for electroless nickel deposition and a method for electroless nickel deposition on silicon-based microchannels, which belong to micro-electromechanical systems (MEMS) machining and electroless plating fields. technical background [0002] With the continuous development of MEMS, the on-chip high-energy micro-battery integrated with it has become a research hotspot. High-efficiency green power supplies with the advantages of low cost, high energy density, miniaturization, long cycle life, and good safety performance are the goals pursued by researchers. Thin-film lithium batteries can provide greater current density and higher output power than traditional batteries due to their rapid transport of lithium ions within a short distance. The core issue that affects the battery capacity is the effective are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C18/32H01M4/28B81C1/00
CPCY02E60/124Y02E60/10
Inventor 王连卫苗凤娟陶佰睿
Owner EAST CHINA NORMAL UNIV
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